A key issue for the ever-evolving world of microelectronics is to find solutions for controlling the miniaturisation of integrated circuits. One of the principal hurdles to overcome is the strain-induced failure arising from lattice mismatch among different materials, different thermal expansion coefficients, sharp patterning, and device re-scaling. Raman microscopy is the most effective tool to monitor quickly and non-destructively the formation and evolution of stress throughout all steps of production.