Centar Frontier 是整合了显微镜、CCD数码相机和图像处理系统的全自动研磨抛光系统，其
应用于半导 体行业中电镜样品的制备，特别是横截面样品制备和平面样品的减薄。相对于
传统的制样模式，Centar Frontier 可在短时间内同时完成多个样品的制备工作，大大提高
制样工作的效率和质量。

Vision
* Integrated microscope coupled with a CCD camera
* Revolving turret: Automatic nosepiece with six slots
* Objectives: 1.25x, 2.5x, 5x, 20x, 50x, 100x, 150x
* Magnification: 75x, 150x, 300x, 1200x, 3000x, 6000x, 9000x (on screen)
* Illumination: White light, bright field
Mechanical
* PolishEye(TM) module: On-line polishing sensors, significantly reduce overall polishing time
* High accuracy 5-Axis linear motion
* EAC(TM) (Exact Angle Control) with ±0.003° accuracy
– Automatic theta alignment: -3 to +10°
– Automatic tilt alignment: ±7°
* 90° view mode for incremental polished facet analysis
* Sample cleaning module: Wiping with PVH and drying with Nitrogen before inspection
* Polisher unit:
– Polishing Disks: Any commercial 8” diameter films
– Polishing Force: Computer controlled 130-600gr
– Polishing Speed: 1-200 rpm, in both directions (CW or CCW)
* Industrial PC, Windows XP professional, 17” LCD screen
* ALD (Automatic Lubricant Dispenser): Dispenses lubricants onto the polisher for improved surface quality (Optional)
Physical
* Size: W 40” x D 40” x H 55” (1000 x 1000 x 1400 mm)
* Weight: 880lbs (400kg)
Utilities
* Power: 115/230V @ 60/50Hz single phase, 500W
* Dry Nitrogen: 50-80 psi (3.5-5.5 bar) 6mm O.D. Nylon hose
* Water Supply: D.I. 6mm O.D. Nylon hose
* Water Drain: 1” O.D. Nylon hose, min 40 psi (2.75 bar)
Specimen types
* Dies - All types of dies
* Packages: Solder bumps (C4), wire bonding pads, MCP-SCSP and other stacked dies.
* Electronic components - Capacitors, LEDs,
* Optical components - AWG, V-grooves and others.
* Metallurgical samples
* PCBs
Sample shape & size
* Up to 30x30x6mm3 sample size can be loaded onto the system (for inspection purposes)
* Up to 400mm2 polished facet area (application dependent)
* No minimum size or thickness limitations (samples can be mounted on dummy sample)
* Any shapeSample materials
* IC layers: Al-SiO2-W, CU/Low-K
* IC top layer: Polyamide, Resist, Pads, SI-Nitride
* Substrate: Silicon, SiC, GaAs and other III-V, Rotated substrates (e.g. 45° off), Stressed Si, SOI
* Packages: Organic and ceramic
Performance
* Cross sectioning: 100nm accuracy - 20min; 1μm accuracy - 10min
* Thinning: At plain view or cross section to any desired thickness (down to~ 5um)
~10μm thickness - 45 min; ~ 5μm thickness - 60 min
* Delayering: Interactive layer removal with fast throughput, Hands-Free
* Backside: Automatic or interactive substrate removal down to a few microns, Hands-Free