使用VUV椭圆偏振光谱仪和FTIR-ATR对纳米级厚度的高k介电材料进行研究

应用领域:电子/电器/半导体

检测样品:纳米级厚度的高k介电材料

检测项目:厚度,光学常数,纳米级尺寸的界面

方案摘要

Optical characterization techniques proved to be complementary to optimize highmaterials used in microelectronic applications.

This note shows that the VUV wavelength range of the UVISEL Phase Modulated Ellipsometer is particularly suitable for the accurate characterization of high-K film thickness and interfaces with nanoscale dimensions as well as optical properties and bandgap.

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