产品描述
广电计量积极布局第三代半导体功率器件的测试业务，引进国际先进的测试技术，为功率半导体产业上下游企业提供器件参数检测服务，助力器件国产化、高新化发展。测试项目包括：静态参数、动态参数、热特性、雪崩耐量、短路特性及绝缘耐压测试；设备支持0-1500A，0-3000V的器件参数检测，覆盖MIL-STD-750，IEC 60747系列，GB/T29332等标准。
服务介绍
随着技术发展，第三代半导体功率器件开始由实验室阶段步入商业应用，未来应用潜力巨大，这些新型器件测试要求更高的电压和功率水平，更快的开关时间。
根据标准、试验条件及被测样品量确定
MOSFET、IGBT、DIODE、BJT，第三代半导体器件等分立器件，以及上述元件构成的功率模块
| 静态参数 | 符号 |
| Drain to Source Breakdown Voltage | BVDSS |
| Drain Leakage Current | IDSS |
| Gate Leakage Current | IGSS |
| Gate Threshold Voltage | VGS(th) |
| Drain to Source On Resistance | RDS(on) |
| Drain to Source On Voltage | VDS(on) |
| Body Diode Forward Voltage | VSD |
| Internal Gate Resistance | Rg |
| Input capacitance | Cies |
| Output capacitance | Coes |
| Reverse transfer capacitance | Cres |
| Transconductance | gfs |
| Gate to Source Plateau Voltage | Vgs(pl) |
| 动态参数 | 符号 |
| Turn-on delay time | td(on) |
| Rise time | tr |
| Turn-off delay time | td(off) |
| Fall time | tf |
| Turn-on energy | Eon |
| Turn-off energy | Eoff |
| Diode reverse recovery time | trr |
| Diode reverse recovery charge | Qrr |
| Diode peak reverse recovery current | Irrm |
| Diode peak rate of fall of reverse recovery current |
dirr/dt |
| Total gate charge | QG |
| Gate-Emitter charge | QGC |
| Gate-Collector charge | QGE |
| 其他参数 | 符号 |
| thermal resistance | Rth |
| Unclamped Inductive Switching | UIS |
| Reverse biased safe operating area | RBSOA |
| Short circuit safe operation area | SCSOA |
