31.020 电子元器件综合 标准查询与下载

ASTM F1467-18 使用X射线测试仪的标准指南（

1.1 This guide covers recommended procedures for the use of X-ray testers (that is, sources with a photon spectrum having ≈10 keV mean photon energy and ≈50 keV maximum energy) in testing semiconductor discrete devices and integrated circuits for effects from ionizing radiation. 1.2 The X-ray tester may be appropriate for investigating the susceptibility of wafer level or delidded microelectronic devices to ionizing radiation effects. It is not appropriate for investigating other radiation-induced effects such as singleevent effects (SEE) or effects due to displacement damage. 1.3 This guide focuses on radiation effects in metal oxide semiconductor (MOS) circuit elements, either designed (as in MOS transistors) or parasitic (as in parasitic MOS elements in bipolar transistors). 1.4 Information is given about appropriate comparison of ionizing radiation hardness results obtained with an X-ray tester to those results obtained with cobalt-60 gamma irradiation. Several differences in radiation-induced effects caused by differences in the photon energies of the X-ray and cobalt-60 gamma sources are evaluated. Quantitative estimates of the magnitude of these differences in effects, and other factors that should be considered in setting up test protocols, are presented. 1.5 If a 10-keV X-ray tester is to be used for qualification testing or lot acceptance testing, it is recommended that such tests be supported by cross checking with cobalt-60 gamma irradiations. 1.6 Comparisons of ionizing radiation hardness results obtained with an X-ray tester with results obtained with a LINAC, with protons, etc. are outside the scope of this guide. 1.7 Current understanding of the differences between the physical effects caused by X-ray and cobalt-60 gamma irradiations is used to provide an estimate of the ratio (number-ofholes-cobalt-60)/(number-of-holes-X-ray). Several cases are defined where the differences in the effects caused by X-rays and cobalt-60 gammas are expected to be small. Other cases where the differences could potentially be as great as a factor of four are described. 1.8 It should be recognized that neither X-ray testers nor cobalt-60 gamma sources will provide, in general, an accurate simulation of a specified system radiation environment. The use of either test source will require extrapolation to the effects to be expected from the specified radiation environment. In this guide, we discuss the differences between X-ray tester and cobalt-60 gamma effects. This discussion should be useful as background to the problem of extrapolation to effects expected from a different radiation environment. However, the process of extrapolation to the expected real environment is treated elsewhere (1, 2).2 1.9 The time scale of an X-ray irradiation and measurement may be much different than the irradiation time in the expected device application. Information on time-dependent effects is given. 1.10 Possible lateral spreading of the collimated X-ray beam beyond the desired irradiated region on a wafer is also discussed. 1.11 Information is given about recommended experimental methodology, dosimetry, and data interpretation. 1.12 Radiation testing of semiconductor devices may produce severe degradation of the electrical parameters of irradiated devices and should therefore be considered a destructive test. 1.13 The values stated in SI units are to be regarded as standard. No other units of measurement are included in this standard. 1.14 This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the 1 This guide is under the jurisdiction of ASTM Committee F01 on Electronicsand is the direct responsibility of Subcommittee F01.11 on Nuclear and Space Radiation Effects. Current edition approved March 1, 2018. Published April 2018. Originally approved in 1993. Last previous edition approved in 2011 as F1467 11. DOI: 10.1520/F1467-18. 2 The boldface numbers in parentheses refer to the list of references at the end of this guide. Copyright © ASTM International, 100 Barr Harbor Drive, PO Box C700, West Conshohocken, PA 19428-2959. United States This international standard was developed in accordance with internationally recognized principles on standardization established in the Decision on Principles for the Development of International Standards, Guides and Recommendations issued by the World Trade Organization Technical Barriers to Trade (TBT) Committee. 1 responsibility of the user of this standard to establish appropriate safety, health, and environmental practices and determine the applicability of regulatory limitations prior to use. 1.15 This international standard was developed in accordance with internationally recognized principles on standardization established in the Decision on Principles for the Development of International Standards, Guides and Recommendations issued by the World Trade Organization Technical Barriers to Trade (TBT) Committee.

Standard Guide for Use of an X-Ray Tester (≈10 keV Photons) in Ionizing Radiation Effects Testing of Semiconductor Devices and Microcircuits

EN 60286-1:2017 自动装配用元件的包装.第1部分:带有轴向接线的元件的带封装

IEC 60286-1:2017(E) applies to the tape packaging of components with axial leads for use in electronic equipment. In general, the tape is applied to the component leads. It covers requirements for taping techniques used with equipment for the preforming of leads, automatic handling, insertion and other operations, and includes only those dimensions which are essential to the taping of components intended for the above-mentioned purposes. This edition includes the following significant changes with respect to the previous edition: a) a complete revision of the structure (detailed in Annex A) and reworked layout.

Packaging of components for automatic handling - Part 1: Tape packaging of components with axial leads on continuous tapes

T/CPCA 6045A-2017 高密度互连印制电路板技术规范

本标准规定了高密度互连印制电路板（以下简称HDI印制板）的性能和鉴定规范。内容包括设计要求、品质要求、测试方法、包装及储存。

Specification for High Density Interconnect Printed Circuit Board

BS EN 62435-1:2017 电子元器件 电子半导体设备的长期储存 概述

What is BS EN 62435-1 - Long-term storage of electronic semiconductor devices about?      BS EN 62435 is a European Standard that discusses electronic components. The IEC 62435 series is intended to ensure that adequate reliability is achieved for devices in user applications after long-term storage.   BS EN 62435-1 is the first part of the multi-series that applies to the long-term storage of electronic components.   BS EN 62435-1 on long-term storage covers the terms, definitions, and principles of long-term storage that can be used as an obsolescence mitigation strategy. Long-term storage refers to a duration that can be ...

Electronic components. Long-term storage of electronic semiconductor devices - General

IEC 60050-702:1992/AMD3:2017 修改件3.国际电工词汇.第702部分:振荡、信号和相关设备

Amendment 3 - International electrotechnical vocabulary - Part 702: Oscillations, signals and related devices

BS EN 61709:2017 电气部件.可靠性.故障率和应力模型转换的参考条件

Electric components. Reliability. Reference conditions for failure rates and stress models for conversion

IECQ 03-5-2017 电子元器件的IEC质量评价体系(IECQ体系).程序规则.第5部分:IECQ HSPM计划.有害物质过程管理要求

IEC Quality Assessment System for Electronic Components (IECQ System) - Rules of Procedure - Part 5: IECQ HSPM Scheme - Hazardous Substance Process Management Requirements

NF C20-343*NF EN 61709:2017 电子元件.可靠性.换算用失效率和应力模型的基准条件

Electric components - Reliability - Reference conditions for failure rates and stress models for conversion

BS EN 62435-2:2017 电子元件 电子半导体器件的长期存储第2部分：变质机制

Electronic components - Long-term storage of electronic semiconductor devices. - Part 2: Deterioration mechanisms

IEC 61360-1:2017 带有相关分类表的标准数据元类型.第1部分:定义,原则和方法

This part of IEC 61360 specifies principles for the definition of the properties and associated attributes and explains the methods for representing verbally defined concepts with appropriate data constructs available from IEC 61360-2. It also specifies principles for establishing a hierarchy of classification from a collection of classes, each of which represents a technical concept in the electrotechnical domain or a domain related to electrotechnology. The use of this document facilitates the exchange of technical data through a defined structure for the information to be exchanged in a computer-sensible form. Each property to be exchanged has an unambiguously defined meaning and consistent naming, where relevant a defined value list, a prescribed format and defined units of measure for all quantitative values. There is also provision for: a) control of changes to definitions of the properties through version and revision numbers; b) inclusion of notes and remarks to clarify and help in the application of the definitions; c) indication of the sources of definitions and value lists; d) associated figures and formulae. NOTE IEC TCs and SCs, or other organizations can take this document as a basis for the development of their own dictionaries. Out of scope of this document are subjects concerning the information technology infrastructure such as: security; database locking mechanisms; access rights management.

Standard data element types with associated classification scheme - Part 1: Definitions - Principles and methods

EN 61709:2017 电子元器件.可靠性.转换用故障率和应力模型的参考条件

NEW! IEC 61709:2017 is available as IEC 61709:2017 RLV which contains the International Standard and its Redline version, showing all changes of the technical content compared to the previous edition.IEC 61709:2017 gives guidance on the use of failure rate data for reliability prediction of electric components used in equipment. The method presented in this document uses the concept of reference conditions which are the typical values of stresses that are observed by components in the majority of applications. Reference conditions are useful since they provide a known standard basis from which failure rates can be modified to account for differences in environment from the environments taken as reference conditions. Each user can use the reference conditions defined in this document or use their own. When failure rates stated at reference conditions are used it allows realistic reliability predictions to be made in the early design phase. The stress models described herein are generic and can be used as a basis for conversion of failure rate data given at these reference conditions to actual operating conditions when needed and this simplifies the prediction approach. Conversion of failure rate data is only possible within the specified functional limits of the components. This document also gives guidance on how a database of component failure data can be constructed to provide failure rates that can be used with the included stress models. Reference conditions for failure rate data are specified, so that data from different sources can be compared on a uniform basis. If failure rate data are given in accordance with this document then additional information on the specified conditions can be dispensed with. This document does not provide base failure rates for components – rather it provides models that allow failure rates obtained by other means to be converted from one operating condition to another operating condition. The prediction methodology described in this document assumes that the parts are being used within its useful life. The methods in this document have a general application but are specifically applied to a selection of component types as defined in Clauses 6 to 20 and I.2. This third edition cancels and replaces the second edition, published in 2011. This edition constitutes a technical revision. This third edition is a merger of IEC 61709:2011 and IEC TR 62380:2004. This edition includes the following significant technical changes with respect to the previous edition: addition of 4.5 Components choice, 4.6 Reliability growth during the deployment phase of new equipment, 4.7 How to use this document, and of Clause 19 Printed circuit boards (PCB) and Clause 20 Hybrid circuits with respect to IEC TR 62380; addition of failure modes of components in Annex A; modification of Annex B, Thermal model for semiconductors, adopted and revised from IEC TR 62380; modification of Annex D, Considerations on mission profile; modification of Annex E, Useful life models, adopted and revised from IEC TR 62380; revision of Annex F (former B.2.6.4), Physics of failure; addition of Annex G (former Annex C), Considerations for the design of a data base on failure rates, complemented with parts of IEC 60319; addition of Annex H, Potential sources of failure rate data and methods of selection; addition of Annex J, Presentation of component reliability data, based on IEC 60319. Keywords: failure rate data, reliability prediction of electric componentsStatus Published Reference Document IEC 61709:2017 (EQV) IEC Technical Body IEC/TC 56 date of Availability (DAV) 2017-05-19 ICS 31.020 - Electronic components in general A-Deviation(s) Special National Condition(s)

Electric components - Reliability - Reference conditions for failure rates and stress models for conversion

BS EN 62435-5:2017 电子元件. 电子半导体设备的长期储存. 第5部分: 晶粒和晶元设备

Electronic components - Long-term storage of electronic semiconductor devices. - Part 5: Die and wafer devices

EN 62435-2:2017 电子元件 电子半导体器件的长期储存 第2部分：劣化机理

IEC 62435-2:2017 is related to deterioration mechanisms and is concerned with the way that components degrade over time depending on the storage conditions applied. This part also includes guidance on test methods that may be used to assess generic deterioration mechanisms. Typically, this part is used in conjunction with IEC 62435-1:2017 for any device long-term storage whose duration may be more than 12 months for product scheduled for long duration storage.

Electronic components - Long-term storage of electronic semiconductor devices - Part 2: Deterioration mechanisms

EN 62435-1:2017 电子元件 电子半导体器件的长期储存 第1部分：总则

IEC 62435-1:2017 on long-term-storage covers the terms, definitions and principles of long-term-storage that can be used in as an obsolescence mitigation strategy. Long-term storage refers to a duration that can be more than 12 months for products scheduled for long duration storage. Philosophy, good working practice, and general means to facilitate the successful long-term-storage of electronic components are also addressed. This standard cancels and replaces IEC/PAS 62435 published in 2005. This first edition constitutes a technical revision.

Electronic components - Long-term storage of electronic semiconductor devices - Part 1: General

JC/T 2399-2017 偏置电场下材料热释电系数测试方法

Test method for pyroelectric coefficient of materials under bias electric field

EN 62435-5:2017 电子元件 电子半导体器件的长期储存 第5部分：管芯和晶圆器件

IEC 62435-5:2017 is applicable to long-term storage of die and wafer devices and establishes specific storage regimen and conditions for singulated bare die and partial or complete wafers of die including die with added structures such as redistribution layers and solder balls or bumps or other metallisation. This part also provides guidelines for special requirements and primary packaging that contain the die or wafers for handling purposes. Typically, this part is used in conjunction with IEC 62435-1:2017 for long-term storage of devices whose duration can be more than 12 months for products scheduled for long duration storage.

Electronic components - Long-term storage of electronic semiconductor devices - Part 5: Die and wafer devices

EN 63002:2017 与便携式计算设备一起使用的外部电源的识别和通信互操作方法

IEC 63002:20016 defines interoperability guidelines for external power supplies used with portable computing devices that implement the IEC 62680-1-2: Universal Serial Bus Power Delivery Specification with the IEC 62680-1-3: Universal Serial Bus Interfaces for data and power-Common Components- Type-CTM Type-C Cable and Connector Specification. It specifies the data objects used by a portable computing system using IEC 62680-1-2 to understand the identity, design and performance characteristics, and operating status of an external power supply. This International Standard is applicable to external power supplies under 100 watts for portable computing devices, with a focus on power delivery application for notebook computers, tablets, smartphones and other related multimedia devices.

Identification and communication interoperability method for external power supplies used with portable computing devices

IEC 61709:2017 RLV 电气元件.可靠性.转换用故障率和应力模型的参考条件

Electric components - Reliability - Reference conditions for failure rates and stress models for conversion

IEC 61709:2017 电子元器件.可靠性.转换用故障率和应力模型的基准条件

This document gives guidance on the use of failure rate data for reliability prediction of electric components used in equipment. The method presented in this document uses the concept of reference conditions which are the typical values of stresses that are observed by components in the majority of applications. Reference conditions are useful since they provide a known standard basis from which failure rates can be modified to account for differences in environment from the environments taken as reference conditions. Each user can use the reference conditions defined in this document or use their own. When failure rates stated at reference conditions are used it allows realistic reliability predictions to be made in the early design phase. The stress models described herein are generic and can be used as a basis for conversion of failure rate data given at these reference conditions to actual operating conditions when needed and this simplifies the prediction approach. Conversion of failure rate data is only possible within the specified functional limits of the components. This document also gives guidance on how a database of component failure data can be constructed to provide failure rates that can be used with the included stress models. Reference conditions for failure rate data are specified, so that data from different sources can be compared on a uniform basis. If failure rate data are given in accordance with this document then additional information on the specified conditions can be dispensed with. This document does not provide base failure rates for components - rather it provides models that allow failure rates obtained by other means to be converted from one operating condition to another operating condition. The prediction methodology described in this document assumes that the parts are being used within its useful life. The methods in this document have a general application but are specifically applied to a selection of component types as defined in Clauses 6 to 20 and I.2.

Electric components - Reliability - Reference conditions for failure rates and stress models for conversion

GOST R 57409-2017 电子, 量子电子和电气产品. 典型特征参数和定义的标准设置过程与方法

Electronic, quantum electronic and electrical products. Procedure and methods of standard-setting for parameters and definitions of typical characteristics