31.080.10 二极管 标准查询与下载
共找到 343 条与 二极管 相关的标准，共 23 页
TEST METHODS OF LASER DIODES USED FOR RECORDING AND PLAYBACK
- ICS
- 31.080.10
- CCS
- 发布
- 1991-12-16
- 实施
Replaces the existing sub-clauses: 2.4.3 (on page 17), 1.3 and 1.4 (on page 23), 1.2 (on page 25), 1.3 (on page 27) and 4.1 (on page 51).
Semiconductor devices; discrete devices; part 3: signal (including switching) and regulator diodes; amendment 1
- ICS
- 31.080.10
- CCS
- L41
- 发布
- 1991-10
- 实施
TESTING METHODS FOR SEMICONDUCTOR RECTIFIER DIODES
- ICS
- 31.080.10
- CCS
- 发布
- 1991-06-03
- 实施
Semiconductor devices. Discrete devices. Part 3. Signal (including switching) and regulator diodes
- ICS
- 31.080.10
- CCS
- 发布
- 1991
- 实施
- 1992-07-01
JEDEC standards and publications contain material that has been prepared, reviewed, and approved through the JEDEC Board of Directors level and subsequently reviewed and approved by the JEDEC legal counsel.
Thermal Impedance Measurements for Insulated Gate Bipolar Transistors Addendum to JEDEC JESD 24
- ICS
- 31.080.10
- CCS
- L41
- 发布
- 1991
- 实施
Semiconductor devices. Discrete devices and integrated circuits. Part 2. Rectifire diodes
- ICS
- 31.080.10
- CCS
- 发布
- 1991
- 实施
- 1992-07-01
이 규격은 주로 전자기기 및 장치의 표시용으로서 사용하는 개별 가시광 발광 다이오드에 대하
Light Emitting Diodes(for Indication)
- ICS
- 31.080.10
- CCS
- K46
- 发布
- 1990-12-20
- 实施
- 1990-12-20
Light Emitting Diodes(for Indication)
- ICS
- 31.080.10
- CCS
- 发布
- 1990-12-20
- 实施
Measuring Methods for Light Emitting Diodes (for Indication)
- ICS
- 31.080.10
- CCS
- 发布
- 1990-12-20
- 实施
이 규격은 주로 표시용으로서 사용하는 발광 다이오드의 전기 및 광학적 특성 측정방법에 대하
Measuring Methods for Light Emitting Diodes (for Indication)
- ICS
- 31.080.10
- CCS
- K46
- 发布
- 1990-12-20
- 实施
- 1990-12-20
Light Emitting Diodes(for Indication)
- ICS
- 31.080.10
- CCS
- 发布
- 1990-12-20
- 实施
Measuring Methods for Light Emitting Diodes (for Indication)
- ICS
- 31.080.10
- CCS
- 发布
- 1990-12-20
- 实施
JEDEC standards and publications contain material that has been prepared, reviewed, and approved through the JEDEC Board of Directors level and subsequently reviewed and approved by the JEDEC legal counsel.
Thermal Impedance Measurements for Bipolar Transistors (Delta Base- Emitter Voltage Method) Addendum to JEDEC JESD 24
- ICS
- 31.080.10
- CCS
- L41
- 发布
- 1990
- 实施
GOST 28625-1990 半导体器件.分立器件.第3部分.信号二极管（包括开关二极管）和电流、电压二极管－调节器.第2节.不包括带有温度补偿的精密齐纳二级管在内的稳压管和齐纳二极管的技术条件形式
Semiconductor devices. Discrete devices. Part 3. Signal (including switching) and regulator diodes. Section 2. Blank detail specification for voltage-regulator diodes and voltage-reference diodes, excluding temperature-compensated precision reference diod
- ICS
- 31.080.10
- CCS
- 发布
- 1990
- 实施
- 1991-01-01
The blank detail specification described includes mechanical description, categories of assessed quality, limiting values, electrical characteristics, marking, ordering information, test conditions and inspection requirements.
Semiconductor devices; discrete devices; part 2: rectifier diodes; section one: blank detail specification for rectifier diodes (including avalanche rectifier diodes), ambient and case-rated, up to 100 A
- ICS
- 31.080.10
- CCS
- L43
- 发布
- 1989-04
- 实施
- 2007-07-27
Настоящий стандарт распространяется на полупроводниковые переключательные и ограничительные сверхвысокочастотные диоды и устанавлива
Semiconductor microwave switching and limiter diodes. Methods of measuring loss resistances
- ICS
- 31.080.10
- CCS
- 发布
- 1988
- 实施
- 1989-07-01
NF C 86-812-1981 Supplement 1
- ICS
- 31.080.10
- CCS
- L41
- 发布
- 1987-11-01
- 实施
- 1987-11-20
本标准适用于电子机器或装置上供指示用之单体可见光发光二极管（以下简称发光二极管）。
Light Emitting Diodes (for Indication)
- ICS
- 31.080.10
- CCS
- 发布
- 1987-02-17
- 实施
- 1987-02-17
本空白详细规范规定了制订阶跃恢复二极管详细规范的基本原则，制订该范围内的所有详细规范应与本空白详细规范一致。 本空白详细规范是与GB4936.1-85《半导体分立器件总规范》有关的一系列空白详细规范中的一个。
Blank detail specification for step-function recovery diodes
- ICS
- 31.080.10
- CCS
- L41
- 发布
- 1987-02-10
- 实施
- 1987-10-01
JEDEC standards and publications contain material that has been prepared, reviewed, and approved through the JEDEC Board of Directors level and subsequently reviewed and approved by the JEDEC legal counsel.
Thermal Resistance Test Method for Signal and Regulator Diodes (Forward Voltage, Switching Method) Reaffirmation of ANSI/EIA-531-1986, Previously Published as IS-13; Replaces JEDEC JEP 90
- ICS
- 31.080.10
- CCS
- L41
- 发布
- 1986-07-01
- 实施
