31.080.10 二极管 标准查询与下载
共找到 343 条与 二极管 相关的标准，共 23 页
Semiconductor devices. Discrete devices and integrated circuits. Part 3 : signal (including switching) and regulator diodes.
- ICS
- 31.080.10
- CCS
- L41
- 发布
- 1986-04-01
- 实施
- 1986-04-05
General details, terminology and letter symbols, essential ratings and characteristics and measuring methods.
Semiconductor devices - Discrete devices - Recommendations for signal (including switching) and regulator diodes
- ICS
- 31.080.10
- CCS
- L41
- 发布
- 1986-03-31
- 实施
- 1986-03-31
Applicable to quality assessment for signal diodes, switching diodes and controlled avalanche diodes. Gives specific requirements (included in QC 750001 of the IECQ system), represents the blank detail specification.
Semiconductor devices. Discrete devices. Part 3 : Signal (including switching) and regulator diodes. Section One: Blank detail specification for signal diodes, switching diodes and controlled-avalanche diodes
- ICS
- 31.080.10
- CCS
- L41
- 发布
- 1986
- 实施
- 2007-07-27
Applicable to quality assessment for voltage-regulator diodes and voltage-reference diodes, excluding temperature-compensated precision reference diodes. Gives specific requirements (included in QC 750005 of the IECQ system), represents the blank detail
Semiconductor devices. Discrete devices. Part 3 : Signal (including switching) and regulator diodes. Section Two: Blank detail specification for voltage-regulator diodes and voltage-reference diodes, excluding temperature-compensated precision reference d
- ICS
- 31.080.10
- CCS
- L41
- 发布
- 1986
- 实施
- 2007-07-27
Semiconductor microwave limiter diodes. Measurement method of break-down and leakage powers
- ICS
- 31.080.10
- CCS
- 发布
- 1986
- 实施
- 1987-07-01
Deals with terminology and letter symbols, essential ratings and characteristics, measuring methods, acceptance and reliability, completing the standards on signal and regulator diodes.
Semiconductor devices. Discrete devices. Part 3 : Signal (including switching) and regulator diodes.
- ICS
- 31.080.10
- CCS
- L41;L40
- 发布
- 1985
- 实施
- 2006-03-29
Настоящий стандарт распространяется на полупроводниковые диоды и устанавливает следующие методы измерения дифференциального и динамич
Semiconductor diodes. Methods for measuring differential and slope resistances
- ICS
- 31.080.10
- CCS
- 发布
- 1985
- 实施
- 1986-07-01
本标准适用于二极管静态参数测量之热平衡状态。
Thermal Equilibrium Conditions for Measurement of Diode Static Parameters
- ICS
- 31.080.10
- CCS
- 发布
- 1984-11-20
- 实施
- 1984-11-20
In t h e manufacture and a p p l i c a t i o n of diodes it is desirable t o s t a n d a r d i z e the nominal v a l u e s when s p e c i f y i n g breakdown v o l t a g e for v o l t a g e r e g u l a t o r d i o d e s , c a p a c i t a n c e f o r v a r i a b l e c a p a c i t o r d i o d e s , and peak p o i n t c u r r e n t for t u n n e l d i o d e s .
List of Preferred Values for Use on Various Types of Small Signal and Regulator Diodes
- ICS
- 31.080.10
- CCS
- L41
- 发布
- 1984-08-01
- 实施
ELECTRONIC COMPONENTS. SEMICONDUCTOR DEVICES. DISCRETE DEVICES AND INTEGRATED CIRCUITS. PART 2 : RECTIFIER DIODES.
- ICS
- 31.080.10
- CCS
- L43
- 发布
- 1984-07
- 实施
- 1984-06-05
Semiconductor UHF diodes. Measurement methods of thermal resistance and pulse thermal resistance
- ICS
- 31.080.10
- CCS
- 发布
- 1984
- 实施
- 1986-01-01
Semiconductor microwave diodes. General specifications
- ICS
- 31.080.10
- CCS
- 发布
- 1984
- 实施
- 1986-01-01
Semiconductor diodes. Total series equivalent resistance measurement methods
- ICS
- 31.080.10
- CCS
- 发布
- 1984
- 实施
- 1985-07-01
RELIABILITY ASSURED RECTIFIER DIODES (MEDIUM AND HIGH CURRENT)
- ICS
- 31.080.10
- CCS
- 发布
- 1983-12-26
- 实施
Harmonized system of quality assessment for electronic components. Blank detail specification. Case rated rectifier diodes.
- ICS
- 31.080.10
- CCS
- L43
- 发布
- 1983-06-01
- 实施
- 1983-06-30
Harmonized system of quality assessment for electronic components. Blank detail specification. Ambient rated rectifier diodes.
- ICS
- 31.080.10
- CCS
- L43
- 发布
- 1983-06-01
- 实施
- 1983-06-30
This specification covers technical grade lead dioxide.
LEAD DIOXIDE, TECHNICAL
- ICS
- 31.080.10
- CCS
- L41
- 发布
- 1983-01-12
- 实施
Настоящий стандарт распространяется на полупроводниковые диоды и устанавливает метод измерения пробивного напряжения. Общие требования
Semiconductor diodes. Measurement method of breakdown voltage
- ICS
- 31.080.10
- CCS
- 发布
- 1983
- 实施
- 1984-07-01
This Standard defines reference distances for the external package. It specifically exchdes transistors, nonhermetic devices (leak rate > 1 x IO4 standard cubic centimeter/second) and assemblies of semiconductor devices such as thyristors and rectifier diodes.
Definition of External Clearance and Creepage Distances of Discrete Semiconductor Packages for Thyristors and Rectifier Diodes
- ICS
- 31.080.10
- CCS
- L41
- 发布
- 1983
- 实施
Semiconductor devices. Discrete devices. Part 2 : Rectifier diodes
- ICS
- 31.080.10
- CCS
- L43
- 发布
- 1983
- 实施
