31.080.10 二极管 标准查询与下载



共找到 343 条与 二极管 相关的标准,共 23

General procedures of measurement for silicon current-regulator diodes

ICS
31.080.10
CCS
L41
发布
1982-08-20
实施
1983-01-01

Methods of measurement for regulated current of silicon current regulator diodes

ICS
31.080.10
CCS
L41
发布
1982-08-20
实施
1983-01-01

Methods of measurement for dynamic impedance of silicon current regulator diodes

ICS
31.080.10
CCS
L41
发布
1982-08-20
实施
1983-01-01

Methods of measurement for limiting voltage of silicon current regulator diodes

ICS
31.080.10
CCS
L41
发布
1982-08-20
实施
1983-01-01

Methods of measurement for current temperature coefficient of silicon current regulator diodes

ICS
31.080.10
CCS
L41
发布
1982-08-20
实施
1983-01-01

Specification for Harmonized system of quality assessment for electronic components Blank detail specification 1. MECHANICAL DESCRIPTION 2. ELECTRICAL APPLICATION 3. LEVELS OF QUALITY ASSESSMENT 4. LIMITING VALUES 5. ELECTRICAL CHARACTERISTICS 6. MARKING 7. ORDERING INFORMATION 8. TEST'CONDITIONS AND QUALITY ASSESSMENT

Specification for harmonized system of quality assessment for electronic components. Blank detail specification: case-rated rectifier diodes

ICS
31.080.10
CCS
L43;L00
发布
1982-08-15
实施
1982-08-15

This standard lists the ratings, characteristics and inspection requirements which shall be included as mandatory requirements in accordance with BS CECC 50000 in any detail specification for these devices.

Specification for harmonized system of quality assessment for electronic components. Blank detail specification: ambient-rated rectifier diodes

ICS
31.080.10
CCS
L43;L00
发布
1982-04-15
实施
1982-04-15

Detail specification for silicon voltage booster diodes,Type 2CN4C,2DN4C,2CN5C and 2DN5C

ICS
31.080.10
CCS
L41
发布
1982-01-03
实施
1982-07-01

Detail specification for silicon damper diodes,Types 2CN1D~2D,2DN1D~2D,2CN3D~3K,2DN3D~3K,2CN6D~6K and 2DN6D~6K

ICS
31.080.10
CCS
L41
发布
1982-01-03
实施
1982-07-01

Detail specification for silicon band switching varialbe capacitance diodes,Type 2CC110,2CC210,2CC310,2CC410,2CC130

ICS
31.080.10
CCS
L41
发布
1982-01-01
实施
1982-01-01

Detail specification for silicon tuning variable capacitance diodes,for Type 2CC120,2CC122 and 2CC124;2CC220,2CC222 and 2CC224;2CC320,2CC322,2CC324;2CC420,2CC422 and 2CC424

ICS
31.080.10
CCS
L41
发布
1982-01-01
实施
1982-01-01

Detail specification for silicon frequency modulated variable capacitance diodes,Type 2CC126

ICS
31.080.10
CCS
L41
发布
1982-01-01
实施
1982-01-01

RELIABILITY ASSURED LOW CURRENT SWITCHING DIODES

ICS
31.080.10
CCS
发布
1981-10-29
实施

Harmonised system of quality assessment for electronic components. Blank detail specification : variable capacitance diodes.

ICS
31.080.10
CCS
L41
发布
1981-06-01
实施
1981-06-05

NF C 86-815-1975 Supplement 1

ICS
31.080.10
CCS
L41
发布
1981-06-01
实施
1981-06-05

Harmonised system of quality assessment for electronic components. Blank detail specification : general purpose signal and/or switching semiconductor diodes.

ICS
31.080.10
CCS
L41
发布
1981-06-01
实施
1981-06-05

NF C 86-815-1975 Supplement 2

ICS
31.080.10
CCS
L41
发布
1981-06-01
实施
1981-06-05

NF C 86-816-1976 Supplement 1

ICS
31.080.10
CCS
L41
发布
1981-06-01
实施
1981-06-05

Semiconductors. Microwave diodes. Schottky diodes. General requirements.

ICS
31.080.10
CCS
L44
发布
1981-06-01
实施
1981-06-05

Harmonised system of quality assessment for electronic components. Blank detail specification : voltage regulator diodes and voltage reference diodes.

ICS
31.080.10
CCS
L41
发布
1981-06-01
实施
1981-06-05



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