31.080.10 二极管 标准查询与下载
共找到 343 条与 二极管 相关的标准，共 23 页
Настоящий стандарт распространяется на полупроводниковые диоды СВЧ смесительные и детекторные и устанавливает 2 метода измерения шумово
Semiconductor UHF mixer and detector diodes. Measurement methods of output noise ratio
- ICS
- 31.080.10
- CCS
- 发布
- 1974
- 实施
- 1975-07-01
This specification covers the detail requirements for a Silicon Avalenche Rectifier Diode and is in accordance with, K1007. Issue 3. except as otherwise stated.
Detail specification for silicon avalanche rectifier diode
- ICS
- 31.080.10
- CCS
- L43
- 发布
- 1973-10-15
- 实施
- 1973-10-15
Variable capacitance diodes. Method of measuring temperature coefficient of capacitance
- ICS
- 31.080.10
- CCS
- 发布
- 1973
- 实施
- 1974-07-01
Настоящий стандарт распространяется на полупроводниковые диоды и устанавливает методы измерения постоянного прямого напряжения и посто
Semiconductor diodes. Method of measuring of direct forward voltage and direct forward current
- ICS
- 31.080.10
- CCS
- 发布
- 1973
- 实施
- 1975-01-01
Настоящий стандарт распространяется на импульсные диоды и умножительные СВЧ диоды и устанавливает метод измерения времени выключения
Semiconductor diodes. Method for measuring transition time
- ICS
- 31.080.10
- CCS
- 发布
- 1973
- 实施
- 1975-01-01
Semiconductor diodes. Methods for measuring life time
- ICS
- 31.080.10
- CCS
- 发布
- 1973
- 实施
- 1975-01-01
Настоящий стандарт распространяется на полупроводниковые импульсные и выпрямительные диоды и устанавливает метод измерения времени обр
Semiconductor diodes. Method for measuring reverse recovery time
- ICS
- 31.080.10
- CCS
- 发布
- 1973
- 实施
- 1975-01-01
Настоящий стандарт распространяется на полупроводниковые диоды и устанавливает метод измерения импульсного прямого напряжения и времен
Semiconductor diodes. Method for measuring pulse direct voltage and forword recovery time
- ICS
- 31.080.10
- CCS
- 发布
- 1973
- 实施
- 1975-01-01
Variable capacitance diodes. Method for measuring the quality factor
- ICS
- 31.080.10
- CCS
- 发布
- 1973
- 实施
- 1975-01-01
Настоящий стандарт распространяется на полупроводниковые диоды и устанавливает метод измерения постоянного обратного тока. Стандарт не
Semiconductor diodes. Method for measuring direct reverse current
- ICS
- 31.080.10
- CCS
- 发布
- 1973
- 实施
- 1975-01-01
Настоящий стандарт распространяется на полупроводниковые диоды и устанавливает методы измерения общей емкости диода: метод емкостно-оми
Semiconductor diodes. Methods for measuring capacitance
- ICS
- 31.080.10
- CCS
- 发布
- 1973
- 实施
- 1975-01-01
Semiconductor diodes. Method for measuring recovery charge
- ICS
- 31.080.10
- CCS
- 发布
- 1973
- 实施
- 1975-01-01
Specifies the ratings, characteristics and test requirements for diodes in voltage range 2.7 V to 33 V and 400 mW maximum reverse power dissipation. These diodes are regarded by the original approval authority as direct replacements for the CV7009-CV7106 and CV7138-CV7146.
Detail specification for silicon voltage regulator diodes - 400 mW, 2.7 to 33 V (5%), hermetically sealed, glass encapsulation - General application category Q
- ICS
- 31.080.10
- CCS
- L41
- 发布
- 1972-03-15
- 实施
- 1972-03-15
Ratings, characteristics and test requirements. Semiconductor devices of assessed quality. They may be regarded as direct replacements for types CV8417, CV8427 and CV7843 to CV7849.
Detail specification for silicon voltage regulator diodes - 1.5 W, 6.8 to 200 V (5%), hermetically sealed - General application category C
- ICS
- 31.080.10
- CCS
- L41
- 发布
- 1972-03-15
- 实施
- 1972-03-15
Ratings, characteristics and test requirements. Semiconductor devices of assessed quality. They may be regarded as replacements for types CV7405 to CV7429.
Detail specification for silicon voltage regulator diodes - 1.5 W, 3.3 to 33 V (5%), hermetically sealed - General application category Q
- ICS
- 31.080.10
- CCS
- L41
- 发布
- 1972-03-15
- 实施
- 1972-03-15
Transistor capacitances are usually measured on two-terminal capacitance or impedance bridges. When the capacitances are in the low picofarad ranges, this two terminal measurement is not very accurate or reproducible. The stray capacitances to ground are of the same order of magnitude as the quantities being measured and vary with mechanical changes in the surrounding ground planes.
Measurement of Small Values of Transistor Capacitance
- ICS
- 31.080.10
- CCS
- L41
- 发布
- 1972-01-01
- 实施
Measurement of Small-Signal Transistor Scattering Parameters
Measurement of Small-Signal Transistor Scattering Parameters
- ICS
- 31.080.10
- CCS
- L41
- 发布
- 1972
- 实施
Rectifier diodes. Methods of measuring average forward voltage and average reverse current
- ICS
- 31.080.10
- CCS
- 发布
- 1972
- 实施
- 1974-01-01
This specification covers the detail requirements for a Silicon Avalanche Rectifier Diode and is in accordance with K1007. Issue 3. except as otherwise stated.
Detail specification for silicon avalanche rectifier diodes
- ICS
- 31.080.10
- CCS
- L41
- 发布
- 1971-08-15
- 实施
- 1971-08-15
Specifies the ratings, characteristics and test requirements for a general purpose signal diode in general application category (Q) of semiconductor devices of assessed quality. This diode may be expected to operate in many circuits for which the CV8790 has previously been specified.
Detail specification for general purpose silicon signal diodes - 150 mA, 150 V, hermetically sealed, glass encapsulation - General application category Q
- ICS
- 31.080.10
- CCS
- L41
- 发布
- 1971-05-15
- 实施
- 1971-05-15
