共找到 343 条与 二极管 相关的标准,共 23 页
This specification covers the detail requirements for a Coaxial Mixer Diode and is in accordance with K1007, Issue 3, except as otherwise stated.
Detail specification for coaxial mixer diodes
This specification covers the detail requirements for germanium coaxial mixer diodes and is in accordance with Specification K1007, Issue 3, except where otherwise stated.
Detail specification for germanium coaxial mixer diodes
The matched pair consists of one C776 and one C777.
Detail specification for a matched pair of germanium coaxial mixer diodes
This Specification covers the detail requirements for a Silicon Coaxial Resistive Switching Diode and is in accordance with K1007 except where otherwise stated.
Detail specification for silicon coaxial resistive switching diode
This specification oovers the detail requireaents for Silicon Coaxial Mixer Diodes and is in accordance with Specification K1OO7, Issue 3, except where otherwise stated.
Detail specifications for silicon coaxial mixer diodes
This Specification covers the detail requirements for Silicon Voltage-Regulator Diodes, and is in accordance with K1007, except as otherwise stated.
Detail specifications for silicon voltage-regulator diodes
Detail specification for silicon voltage regulator diodes
Detail specification for mixer diodes for use at X-band frequencies
This specification covers the detail requirements for microwave Silicon Switching Diodes Rod Mounted. The diodes are unencapsulated and not tested for moisture resistance and are in accordance with K1007, except as otherwise stated.
Detail specification for silicon microwave switching diode, rod mounted
Detail specification for mixer diodes for use at X-band frequencies
This specification covers the detail requirements for a Silicon, Stud Mounted, Power Rectifier Diode and is in accordance with Specification K1007, Issue 3 except as otherwise stated.
Detail specifications for silicon stud mounted, power rectifier diodes
Detail specification for silicon voltage regulator diodes
Electronic parts of assessed quality —Silicon voltage-regulator diodes Figure 1 —Power derating Figure 2 Table Ⅰ —Group A Inspection Table Ⅱ —Group B Inspection Table Ⅲ —Group C Inspection
Detail specification for silicon voltage-regulator diodes
This specification covers the detail requirements for Silicon Voltage Regulator diodes and is in accordance with K 1007 Issue 3 except as otherwise stated.
Detail specification for silicon voltage regulator diodes
This specification covers the detail requirements for Silicon Voltage Regulator Diodes and is in accordance with K1OO7, Issue 3, except as otherwise stated.
Detail specification for silicon voltage regulator diodes
The measuring system must provide a means for applying bias to the transistor under test. The bias system must be such as not to influence the accuracy of the measurements. The signal applied by the measuring system to the transistor must be sufficiently smail to satisfy the “small-signal conditions” defined in 1.2. In addition, any spurious signals which might appear at the transistor terminals, and in particular, the local oscillator feedthrough when a superheterodyne receiver is used, must be kept at least 20 dB * below the specified small-signal conditions.
Measurement of Small-Signal VHF-UHF Transistor Short-Circuit Forward Current Transfer Ratio
The measuring system must provide a means for applying bias to the transistor under test. The bias system must be such as not to influence the accuracy of the measurements.
Measurement of Small-Signal VHF-UHF Transistor Admittance Parameters
Tunnel diodes. Types AI301A, AI301B, AI301V, AI301G for widely used devices
Semiconductors diodes types of D 223, D 223a, D 223B for widely used devices
The following noise measurement method applies to transistors whose noise has a Gaussian power distribution, to transistors whose noise has a flat (white) power distribution, and to transistors whose noise has a l/f (power inversely proportional to frequency) power distribution.
Transistor Noise Figure at Frequencies up to 20 kHz by Sinusoidal Signal-Generator Method, Measurement of
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