31.080.10 二极管 标准查询与下载
共找到 343 条与 二极管 相关的标准，共 23 页
The following noise measurement method applies to transistors whose noise has a Gaussian power distribution, to transistors whose noise has a flat (white) power distribution, and to transistors whose noise has a 1 /f (power inversely proportional to frequency) power distribution.
Transistor Equivalent Noise Voltage and Equivalent Noise Current at Frequencies up to 20 kHz, Measurement of
- ICS
- 31.080.10
- CCS
- L41
- 发布
- 1968-04-01
- 实施
Measurement of Small Values of Transistor Capacitance
Measurement of Small Values of Transistor Capacitance
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- 31.080.10
- CCS
- L41
- 发布
- 1967-02-01
- 实施
The minimum storage temperature shall be based on the capability of any individual transistor to meet the test described below.
Verification of Maximum Ratings of Power Transistors, Test Procedures for
- ICS
- 31.080.10
- CCS
- L41
- 发布
- 1967-01-01
- 实施
These standards, adopted by the Electronic Industries Association and issued jointly by the Electronic Industries Association and the National Electrical Manufacturers Association, were formulated by the Semiconductor Device Council of the Joint Electron Device Engineering Councils. The JEDEC Semiconductor Device Council is sponsored by both EIA and NEMA to develop standards, proposals, and data dealing with semiconductor devices.
Ranges and Conditions for Specifying Beta for Low Power, Audio Frequency Transistors for Entertainment Service
- ICS
- 31.080.10
- CCS
- L41
- 发布
- 1965-01-01
- 实施
Networks Si, S., and T shall be constructed to have a minimum of parasitic capacitance, shall be shielded from one another, and shall be constructed using good engineering practice. In general, an attempt should be made to construct these networks such that any unavoidable parasitic elements are included in the specified parts of the network.
Measurement of Small Signal HF, VHF, and UHF Power Gain of Transistors
- ICS
- 31.080.10
- CCS
- L41
- 发布
- 1965-01-01
- 实施
Semiconductor optoelectronic device Detail specification for red light emitting diode for type GF115
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- 31.080.10
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- L41
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Reliability assured rectifier diodes (medium and high current)
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- 31.080.10
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- L41
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Reliability assured low current switching diodes
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- 31.080.10
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- L41
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Reliability assured voltage regulator diodes and voltage reference diodes
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- 31.080.10
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- L41
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Reliability assured low current rectifier diodes
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- 31.080.10
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- L41
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Semiconductor discrete device--Detail specification for silicon voltage regulate diodes for Types 2CWl3016～3051
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- 31.080.10
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- L41
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Semiconductor discrete device--Detail specification for silicon voltage regulate diodes for Types 2CW2970～3015
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- 31.080.10
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- L41
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Semiconductor discrete device--Detail specification for silicon voltage reference diodes for Types 2DW232～236
- ICS
- 31.080.10
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- L41
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Semicondutor discrete device Detail specification for silicon PIN diodes for type PIN11￣15
- ICS
- 31.080.10
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- L41
- 发布
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Semiconductor discrete device Detail specification for silicon power PIN diodes for type PIN 101～105
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- 31.080.10
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- L41
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Semiconductor discrete device Detail specification for silican power PIN diodes for type PIN62317
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- 31.080.10
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- L41
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Measurement of Reverse Recovery Time for Semiconductor Signal Diodes / Note: Approved 1999-04-00.
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- 31.080.10
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- L41
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Semiconductor discrete devices Detail specification for type 2EK31 GaAs switching diode
- ICS
- 31.080.10
- CCS
- L41
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Semiconductor discrete devices Detail specification for type 2CK38 silicon large current switch diode
- ICS
- 31.080.10
- CCS
- L41
- 发布
- 实施
