31.080.10 二极管 标准查询与下载
共找到 343 条与 二极管 相关的标准，共 23 页
Semiconductor devices — Part 2: Discrete devices — Rectifier diodes
- ICS
- 31.080.10
- CCS
- 发布
- 2021-12-29
- 实施
Light Emitting Diodes(for Indication)
- ICS
- 31.080.10
- CCS
- 发布
- 20210928
- 实施
- 20210928
Semiconductor devices－Discrete devices－Part 2：Rectifier diodes－Section Two : Blank detail specification for rectifier diodes (including avalanche rectifier diodes), ambient and case-rated, for currents greater than 100 A
- ICS
- 31.080.10
- CCS
- 发布
- 20210928
- 实施
- 20210928
Measuring Methods for Light Emitting Diodes (for Indication)
- ICS
- 31.080.10
- CCS
- 发布
- 20210928
- 实施
- 20210928
IEC 61643-341:2020 specifies standard test circuits and methods for thyristor surge suppressor (TSS) components. These surge protective components, SPCs, are specially formulated thyristors designed to limit overvoltages and divert surge currents by clamping and switching actions. These SPCs are used in the construction of surge protective devices (SPDs) and equipment used in Information & Communications Technologies (ICT) networks with voltages up to AC 1 000 V and DC 1 500 V. This document is applicable to gated or non-gated TSS components with third quadrant (-v and –i) characteristics of blocking, conducting or switching. This document contains information on - terminology; - letter symbols; - essential ratings and characteristics; - rating verification and characteristic measurement; This document does not apply to the conventional three-terminal thyristors as covered by IEC 60747-6. This second edition of IEC 61643-341 cancels and replaces the first edition published in 2001. This edition constitutes a technical revision.This edition includes the following significant technical changes with respect to the previous edition: Addition of performance values.
Components for low-voltage surge protection - Part 341: Performance requirements and test circuits for thyristor surge suppressors (TSS)
- ICS
- 31.080.10
- CCS
- 发布
- 2020-07-03
- 实施
- 2020-09-17 (7)
Components for low-voltage surge protection - Part 341: Performance requirements and test circuits for thyristor surge suppressors (TSS)
- ICS
- 31.080.10
- CCS
- 发布
- 2020-05-13
- 实施
Components for low－voltage surge protective devices－Part 321：Specifications for avalanche breakdown diode(ABD)
- ICS
- 31.080.10
- CCS
- 发布
- 20191219
- 实施
- 20191219
Semiconductor devices. Discrete devices. Rectifier diodes
- ICS
- 31.080.10
- CCS
- L43
- 发布
- 2018-02-06
- 实施
- 2018-02-06
Measuring methods for small signal diodes
- ICS
- 31.080.10
- CCS
- 发布
- 2017-05-30
- 实施
Measuring methods for small signal diodes
- ICS
- 31.080.10
- CCS
- 发布
- 2017-05-30
- 实施
Semiconductor devices－Discrete devices－Part 3：Signal (including switching) and regulator diodes
- ICS
- 31.080.10
- CCS
- 发布
- 2016-12-29
- 实施
Semiconductor devices－Discrete devices－Part 3：Signal (including switching) and regulator diodes
- ICS
- 31.080.10
- CCS
- 发布
- 2016-12-29
- 实施
Semiconductor devices－Discrete devices－Part 3：Signal (including switching) and regulator diodes
- ICS
- 31.080.10
- CCS
- 发布
- 2016-12-29
- 实施
This part of IEC 60747 provides standards for the following categories or sub-categories of rectifier diodes, including: line rectifier diodes; avalanche rectifier diodes; fast-switching rectifier diodes; Schottky barrier diodes.
Semiconductor devices - Part 2: Discrete devices - Rectifier diodes
- ICS
- 31.080.10
- CCS
- L43
- 发布
- 2016-04
- 实施
- 2016-04-15
Semiconductor devices. Discrete devices: Signal, switching and regulator diodes
- ICS
- 31.080.10
- CCS
- L41
- 发布
- 2015-04-30
- 实施
- 2015-04-30
Components for low-valtage surge protective devices — Part 321: Specification for avalanche breakdown diode(ABD)
- ICS
- 31.080.10
- CCS
- 发布
- 20150311
- 实施
- 20150311
Components for low-valtage surge protective devices — Part 321: Specification for avalanche breakdown diode(ABD)
- ICS
- 31.080.10
- CCS
- 发布
- 2015-03-11
- 实施
This part of IEC 60747 gives the requirements for the following devices: – signal diodes (excluding diodes designed to operate at frequencies above several hundred MHz); – switching diodes (excluding high power rectifier diodes); – voltage-regulator diodes; – voltage-reference diodes; – current-regulator diodes.
Semiconductor devices - Part 3: Discrete devices: Signal, switching and regulator diodes
- ICS
- 31.080.10
- CCS
- 发布
- 2014-12-25
- 实施
This part of IEC 61643 is applicable to avalanche breakdown diodes (ABDs) which represent one type of surge protective device component (hereinafter referred to as SPDC) used in the design and construction of surge protective devices connected to low-voltage power distribution systems, transmission, and signalling networks. Test specifications in this standard are for single ABDs consisting of two terminals. However, multiple ABDs may be assembled within a single package defined as a diode array. Each diode within the array can be tested to this specification. This standard contains a series of test criteria for determining the electrical characteristics of the ABD. From the standard test methods described herein, the performance characteristics and ratings of the ABD can be verified or established for specific packaged designs.
Components for low-voltage surge protective devices - Part 321: Specifications for avalanche breakdown diode (ABD)
- ICS
- 31.080.10
- CCS
- 发布
- 2014-12-25
- 实施
Scope is not provided for this standard
Components for low-voltage surge protective devices - Part 341: Specification for thyristor surge suppressors (TSS)
- ICS
- 31.080.10
- CCS
- 发布
- 2014-12-25
- 实施
