31.200 集成电路、微电子学 标准查询与下载

DLA SMD-5962-90536 REV B-2007 硅单片,双重高速电流反馈运算放大器,线性微型电路

This drawing describes device requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A.

MICROCIRCUIT, LINEAR, DUAL HIGH SPEED CURRENT FEEDBACK OPERATIONAL AMPLIFIER, MONOLITHIC SILICON

DLA SMD-5962-87590 REV C-2007 硅单块 二进制计数器,发射极耦合逻辑,数字微型电路

This drawing describes device requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A

MICROCIRCUIT, DIGITAL, ECL, BINARY COUNTER, MONOLITHIC SILICON

DLA SMD-5962-89577 REV J-2007 硅单片,总线控制器,远程终端及显示器,氧化物半导体数字记忆微型电路

This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels is reflected in the PIN.

MICROCIRCUIT, DIGITAL, CMOS, BUS CONTROLLER, REMOTE TERMINAL AND MONITOR, MONOLITHIC SILICON

DLA SMD-5962-87569 REV D-2007 硅单块 双4-5输入或非门,发射极耦合逻辑,数字微型电路

This drawing describes device requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A.

MICROCIRCUIT, DIGITAL, ECL, DUAL 4-5 INPUT OR/NOR GATE, MONOLITHIC SILICON

DLA SMD-5962-87565 REV D-2007 硅单块 四列二输入或门,发射极耦合逻辑,数字微型电路

This drawing describes device requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A.

MICROCIRCUIT, DIGITAL, ECL, QUAD 2-INPUT OR GATE, MONOLITHIC SILICON

DLA SMD-5962-89824 REV C-2007 硅单片,5伏特电压基准,线性微型电路

This drawing describes device requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A.

MICROCIRCUIT, LINEAR, 5.0 VOLTS, VOLTAGE REFERENCE, MONOLITHIC SILICON

DLA SMD-5962-98639 REV D-2007 微型电路,线型,辐射加固,超低失调运算放大器,单块硅

This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN.

MICROCIRCUIT, LINEAR, RADIATION HARDENED, ULTRA-LOW OFFSET VOLTAGE OPERATIONAL AMPLIFIER, MONOLITHIC SILICON

DLA SMD-5962-89974 REV D-2007 硅单片,高速输出有钳位运算放大器,线性微型电路

This drawing describes device requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A.

MICROCIRCUIT, LINEAR, HIGH SPEED, OUTPUT CLAMPING, OPERATIONAL AMPLIFIER, MONOLITHIC SILICON

DLA SMD-5962-98509 REV A-2007 微型电路,带记忆力,数字型CMOS,28000门可编程逻辑器件,单块硅

This drawing documents three product assurance class levels consisting of space application (device class V), high reliability (device classes M and Q), and nontraditional performance environment (device class N). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels is reflected in the PIN. For device class N, the user is cautioned to assure that the device is appropriate for the application environment.

MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 28000 GATE PROGRAMMABLE LOGIC ARRAY, MONOLITHIC SILICON

DLA SMD-5962-98510 REV B-2007 微型电路,带记忆力,数字型CMOS,36000门可编程逻辑器件,单块硅

This drawing documents three product assurance class levels consisting of space application (device class V), high reliability (device classes M and Q), and nontraditional performance environment (device class N). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels is reflected in the PIN. For device class N, the user is cautioned to assure that the device is appropriate for the application environment.

MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 36000 GATE PROGRAMMABLE LOGIC ARRAY, MONOLITHIC SILICON

DLA SMD-5962-89575 REV C-2007 硅单片,装有1K X 16随机存取存储器的运程终端,氧化物半导体数字记忆微型电路

This drawing describes device requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A.

MICROCIRCUIT, DIGITAL, CMOS, REMOTE TERMINAL FOR STORES WITH 1K X 16 RAM, MONOLITHIC SILICON

DLA SMD-5962-89501 REV D-2007 硅单片总线控制器远程终端多协议互补型金属氧化物半导体数字微电路

This drawing describes device requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A.

MICROCIRCUIT, DIGITAL, CMOS, BUS CONTROLLER REMOTE TERMINAL MULTI-PROTOCOL, MONOLITHIC SILICON

DLA SMD-5962-88645 REV D-2007 硅单片远程终端多协议互补型金属氧化物半导体数字微电路

This drawing describes device requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A.

MICROCIRCUIT, DIGITAL, CMOS, REMOTE TERMINAL MULTI-PROTOCOL, MONOLITHIC SILICON

DLA SMD-5962-88628 REV E-2007 硅单片总线控制器远程终端互补型金属氧化物半导体数字微电路

This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M)and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels is reflected in the PIN.

MICROCIRCUIT, DIGITAL, CMOS, BUS CONTROLLER REMOTE TERMINAL MONOLITHIC SILICON

DLA SMD-5962-90803 REV C-2007 硅单块 互补金属氧化物半导体8K X8比特程序,数字主储存器微型电路

This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN.

MICROCIRCUIT, MEMORY, DIGITAL, CMOS 8K X 8-BIT PROM, MONOLITHIC SILICON

DLA SMD-5962-89576 REV C-2007 硅单片,装有1K X 16随机存取存储器的运程终端接口,氧化物半导体数字记忆微型电路

This drawing describes device requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A.

MICROCIRCUIT, DIGITAL, CMOS, REMOTE TERMINAL INTERFACE WITH 1K X 16 RAM, MONOLITHIC SILICON

DLA SMD-5962-92167 REV B-2007 硅单块 逐渐增加稳压器12瓦特固定正极直线式微型电路

This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN.

MICROCIRCUIT, LINEAR, POSITIVE, FIXED, 12 VOLT, STEP-UP VOLTAGE REGULATOR, MONOLITHIC SILICON

DLA SMD-5962-89891 REV B-2007 硅单片,装有OE及双重CE16K X 4静态随机存取存储器,数字记忆微型电路

This drawing describes device requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A.

MICROCIRCUIT, MEMORY, DIGITAL, CMOS 16K X 4 SRAM WITH OE AND DUAL CE, MONOLITHIC SILICON

DLA SMD-5962-92166 REV C-2007 硅单块 稳压器逐渐增加可调试直线式微型电路

This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN.

MICROCIRCUIT, LINEAR, ADJUSTABLE, STEP-UP, VOLTAGE REGULATOR, MONOLITHIC SILICON

DLA SMD-5962-89712 REV B-2007 硅单片,16K X 4BITS静态随机存取存储器,氧化物半导体数字记忆微型电路

This drawing describes device requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A.

MICROCIRCUITS, MEMORY, DIGITAL, CMOS, 16K X 4 BITS SRAM, (STD POWER), MONOLITHIC SILICON