K46 电力半导体器件、部件 标准查询与下载

DIN 41762-2:1974 静态大功率整流器.第2部分:半导体整流器组和组件、单晶半导体整流器组和组件额定值代码标识

Static power convertors, rating code designation for semiconductor convertor stacks and assemblies, monocrystalline semiconductor convertor stacks and assembliesZusammenhang mit der von der International Electrotechnical Commission (IEC) herausgegebenen

Static power convertors; rating code designation for semiconductor convertor stacks and assemblies, monocrystalline semiconductor convertor stacks and assemblies

DIN 41756-2:1973 静态功率变流器.第2部分:直流负载型功率变流器能率

Static power convertors; duty of power convertors; types of d. c. loadBearbeitet vom FNE/VDE Gemeinschaftsausschu? 221.2/0556 ?Halbleiterstromrichter.Stromrichter mit Gleichstromausgang (Gleichrichter oder Gleichstromumrichter nach DIN 41 750 Blatt 2)

Static power convertors; duty of power convertors, typers of d.c. load

DIN 41756-1:1971 静态功率转换器.负载循环和额定等级

Static power convertors, duty cycles and rating classesBearbeitet vom FNE/VDE-Gemeinschaftsausschu? 221.2/0556 ?Halbleiterstromrichter.Die in dieser Norm angegebenen Belastungsklassen stimmen sachlich überein mit den Angaben im Entwurf 22B (Central Off

Static power convertors; duty cycles and rating classes

JB/T 56226-1994 ZP系列中电流普通整流管

ZP series general intermediate-current rectifier diodes

JB/T 7061-1993 电力半导体器件用硅圆片

本标准规定了电力半导体器件用硅单晶切割片和研磨片（简称硅片）的产品分类、技术要求、试验方法、检验规则和标志、包装、运输与贮存。 本标准行之有效用于直拉单晶、悬浮区熔单晶、中子嬗变惨杂晶经切割、双面研磨制备的圆形硅片。

Silicon wafers intended to be used in power semiconductor devices

JB/T 7064-1993 半导体逆变器通用技术条件

本标准规定了半导体逆变器的技术要求,试验方法和检验规则。 本标准适用于电子阀构成的逆变器，其主要内容针对自换相逆变器和谐振负载换相逆变器。 本标准不适用于无换向器电动机和特殊用途(如动车车辆、船舶、航空等)的逆变器。

General Specifications for Semiconductor Inverters

JB/T 6307.5-1994 电力半导体模块测试方法 双极型晶体管单相桥和三相桥

本标准规定了双极型电力晶体管单相桥和三相桥模块(带续流二极管)的电特性、热特性和额定值的测试方法及热循环负载试验方法。 本标准适用于电流为5A及5A以上外壳额定的NPN型电力晶体管管芯组成的单相桥和三相桥模块。双极型电力晶体管组成的单相桥和三相桥组件也可参照使用。 只要改变电源和电表的极性，本标准也适用于PNP型电力晶体管管芯组成的单相桥和三相桥模块。

Power Semiconductor Module Test Methods Bipolar Transistors Single-Phase Bridge and Three-Phase Bridge

IEEE Std C62.35-1987(R1993) 雪崩结半导体电涌保护器件用IEEE标准试验规范

This standard applies to a two terminal avalanche junction surge suppressor for surge protective application on systems with dc to 420 Hz frequency and voltages equal to or less than 1000 V rms or 1200 V dc. The avalanche junction surge suppressor is a semiconductor diode which can operate in either the forward or reverse direction of its V-I characteristic. The device is a single package which may be assembled from any combination of series and/or parallel diode chips. This standard contains definitions, service conditions, and a series of test criteria for determining the electrical characteristics of these semiconductor avalanche junction surge suppressors. If the characteristics differ with the direction of conduction, then each direction of conduction shall be separately specified.1 Arresters are covered in ANSI/IEEE C62.1-1984 [1] 2,3 and ANSI/IEEE C62.33-1982 [2].

IEEE Standard Test Specifications for Avalanche Junction Semiconductor Surge Protective Devices

IEEE Std C62.36-2000(R2006) 低压数据、通信和发信号电路用电涌保护器的IEEE标准试验方法

This standard applies to surge protectors for application on multiconductor balanced or unbalanced data, communications, and signaling circuits with voltages equal to or less than 1000 V rms, or 1200 V dc. These surge protectors are designed to limit voltage surges, current surges, or both. This standard describes the methods of testing and criteria for determining the end of life of electrical surge protectors used in low-voltage data, communications, and signaling circuits. The surge protectors covered are multiple-component series or parallel combinations of linear or nonlinear elements, packaged for the purpose of limiting voltage, current, or both. This standard is not intended to cover packaged single gas tube, air gap, varistor, or avalanche junction surge-protective devices, which are included in IEEE Std C62.31-1987,1 IEEE Std C62.32-1981, IEEE Std C62.33-1982, and IEEE Std C62.35-1987, respectively. Specifically excluded from this standard are test methods for low-voltage power circuit applications. For protection of wire-line communication facilities under the specialized conditions found at power stations, consult IEEE Std 487-1992. The tests in this standard are intended as design tests, as defined in the IEEE Dictionary [B1]2, and provide a means of comparison among various multiple-component surge protectors. The test criteria and definitions of this standard provide a common engineering language beneficial to users and manufacturers of multiple-component surge protectors.

IEEE Standard Test Methods for Surge Protectors Used in Low- Voltage Data, Communications, and Signaling Circuits

JB/T 7628-1994 KN系列100A/60A 至400A/400A管壳额定逆导三极晶闸管详细规范

本标准规定了逆导三极晶闸管的极限值、特性、检验要求、标志和包装等技术要求。 本标准适用于KN100/70、200/200、300/100、300/300、400/150和400/400型管壳额定的逆导三极晶闸管。

Detail specification for KN series 100A/60A to 400A/400A case rated reverse conduction triode thyristor

JB/T 56227-1994 ZP系列大电流普通整流管

ZP series general large-current rectifier diodes

JB/T 56228-1994 KP系列中电流普通晶闸管

KP series general intermediate-current thyristor

JB/T 56229-1994 KP系列大电流普通晶闸管

KP series general large -current thyristor

JB/T 7060-1993 KB系列过电压保护用两极晶闸管

本标准规定了KB系列5A至50A过电压保护用两级晶闸管的外形、极限值、电特性和检验规则。 本标准适用于过电压保护用通态电流5A至50A管壳额定或工作电流5A至50A的空腔封装两极晶闸管。

KB series two pole thyristors for overvoltage protection