L04 基础标准与通用方法 标准查询与下载



共找到 642 条与 基础标准与通用方法 相关的标准,共 43

本部分给出了军用电子设备电击防护安全设计的基本原则和防护措施。 本部分适用于额定电压不超过600V、频率不超过400Hz的地面安装、车载、舰载、机载及便携式军用电子设备。

Safety designing guide for military electronic equipments Part 1: Protection against electric shock

ICS
CCS
L04
发布
2007-03-02
实施
2007-07-01

IEC 62454 TS, Ed. 1: Mechanical structures for electronic equipment - Design guide: Interface dimensions and provisions for water cooling of electronic equipment within cabinets of the IEC 60297 and IEC 60917 series

ICS
27.200;29.100.99
CCS
L04
发布
2007-02
实施

This Technical Report investigates in the light of the implementation of the WEEE Directive (2002/96/EC) the feasibility of deploying machine readable product identification technologies (e.g. smart tracker chips) to fulfil the marking requirement for the purpose of implementing producer responsibility. The product recognition shall provide information for waste stream management (sorting, reporting and cost allocation). Machine readable product identification technologies can be utilized during every phase of the product life cycle of an EEE. The WEEE management is the last phase. This Technical Report focuses on this phase only.

Smart tracker chips — Feasibility study on the inclusion of RFID in Electrical and Electronic Equipment for WEEE management

ICS
13.030.50;29.020;31.020
CCS
L04
发布
2007-01-31
实施
2007-01-31

1.1 This guide provides recommendations for water quality related to electronics and semiconductor-industry manufacturing. Six classifications of water are described, including water for line widths as low as 0.09 micron. In all cases, the recommendations are for water at the point of distribution (POD).1.2 Water is used for washing and rinsing of semiconductor components during manufacture. Water is also used for cleaning and etching operations, making steam for oxidation of silicon surfaces, preparing photomasks, and depositing luminescent materials. Other applications are in the development and fabrication of solid-state devices, thin-film devices, communication lasers, light-emitting diodes, photo-detectors, printed circuits, memory devices, vacuum-tube devices, or electrolytic devices.1.3 Users needing water qualities different from those described here should consult other water standards, such as Specification D 1193 and Guide D 5196.1.4 This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety and health practices and determine the applicability of regulatory limitations prior to use.

Standard Guide for Ultra-Pure Water Used in the Electronics and Semiconductor Industries

ICS
13.060.25 (Water for industrial use); 71.100.99 (O
CCS
L04
发布
2007
实施

이 규격은 소프트웨어 수명주기 활동에 관한 것이며, 이에 대한 성과물은 소프트웨어에 국한

Software dependability through the software life-cycle processes-Application guide

ICS
03.120.01;03.120.30
CCS
L04
发布
2006-12-27
实施
2006-12-27

이 규격은 에너지 관리를 목적으로 다양한 운전 모드하에서 정보 기술 기기(ITE)의 소비

Power consumption of information technology equipment-Measurement methods

ICS
35.020;35.260
CCS
L04
发布
2006-11-30
实施
2006-11-30

Determination of lead,mercury,chromium,cadmium and bromine in electrical and electronic equipment-Part 5:Quantitative screening by energy dispersive X-ray fluorescence spectrometric method

ICS
31.020
CCS
L04
发布
2006-11-10
实施
2007-05-16

This addendum only consists of additions to ANS/TIA J-STD-025-B adding MEID, as follows: a. Page 12 Line 46: Section 3 -- Definitions and Acronyms - Add Mobile Equipment IDentifier (MEID). b. Page 93 Line 11: Section 6.4.9 -- PartyIdentity - Add meid. c. Page 221 Line 14: Annex I -- PartyIdentity - Add meid.

Addendum: Support for the Mobile Equipment IDentifier (MEID

ICS
13.310;35.200
CCS
L04
发布
2006-09-08
实施

This Standard defines the interfaces between a telecommunications service provider (TSP) and a Law Enforcement Agency to assist the LEA in conducting lawfully authorized electronic surveillance. A TSP, manufacturer, or support service provider that is in compliance with this Standard will have a "safe harbor" under Section 107 of the Communications Assistance for Law Enforcement Act (CALEA), Public Law 103-414.

Lawfully Authorized Electronic Surveillance (CALEA)

ICS
13.310;35.200
CCS
L04
发布
2006-07-17
实施

IEC 60617 establishes rules for the construction of graphical symbols that represent binary logic and analogue functions, respectively. The standard provides alternative ways of representing functions, to be used as circumstances dictate. This Technical Report contains conventions, helpful when applying IEC 60617 to symbols for catalogues of real devices, and shows preferable choices where alternative techniques are provided in the standard. It also helps to create symbols having as consistent an appearance as possible, not depending on the originator, while still accurately representing the function.

Application of symbols for binary logic and analogue elements

ICS
01.080.30;29.020
CCS
L04
发布
2006-07
实施

この規格は,主電源又は電池で動作し,定格電圧が600Vを超えない事務用電気機器及び関連機器を含む情報技術機器に適用する。

Safety of information technology equipment

ICS
13.260;35.020
CCS
L04
发布
2006-05-20
实施

This part of ISO/IEC 11770 defines key establishment mechanisms based on weak secrets, i.e., secrets that can be readily memorized by a human, and hence secrets that will be chosen from a relatively small set of possibilities. It specifies cryptographic techniques specifically designed to establish one or more secret keys based on a weak secret derived from a memorized password, while preventing off-line brute-force attacks associated with the weak secret. More specifically, these mechanisms are designed to achieve one of the following three goals. 1) Balanced password-authenticated key agreement: Establish one or more shared secret keys between two entities that share a common weak secret. In a balanced password-authenticated key agreement mechanism, the shared secret keys are the result of a data exchange between the two entities, the shared secret keys are established if and only if the two entities have used the same weak secret, and neither of the two entities can predetermine the values of the shared secret keys. 2) Augmented password-authenticated key agreement: Establish one or more shared secret keys between two entities A and B, where A has a weak secret and 6 has verification data derived from a one-way function of A's weak secret. In an augmented password-authenticated key agreement mechanism, the shared secret keys are the result of a data exchange between the two entities, the shared secret keys are established if and only if the two entities have used the weak secret and the corresponding verification data, and neither of the two entities can predetermine the values of the shared secret keys. NOTE - This type of key agreement mechanism is unable to protect A's weak secret being discovered by 6, but only increases the cost for an adversary to get A's weak secret from 6. Therefore it is normally used between a client (A) and a server (6). 3) Password-authenticated key retrieval: Establish one or more secret keys for an entity, A, associated with another entity, 6, where A has a weak secret and B has a strong secret associated with A's weak secret. In an authenticated key retrieval mechanism, the secret keys, retrievable by A (not necessarily derivable by 6), are the result of a data exchange between the two entities, and the secret keys are established if and only if the two entities have used the weak secret and the associated strong secret. However, although B's strong secret is associated with A's weak secret, the strong secret does not (in itself) contain sufficient information to permit either the weak secret or the secret keys established in the mechanism to be determined. NOTE - This type of key retrieval mechanism is used in those applications where A does not have secure storage for a strong secret, and requires B's assistance to retrieve the strong secret for her. It is normally used between a client (A) and a server (6). This part of ISO/IEC 11770 does not cover aspects of key management such as — lifecycle management of weak secrets, strong secrets and established secret keys; — mechanisms to store, archive, delete, destroy, etc. weak secrets, strong secrets, and established secret keys. NOTE - The keys generated or retrieved through the use of weak secrets cannot be more secure against exhaustion than the sum of the weak secrets themselves. With this proviso, the mechanisms specified in this part of ISO/IEC 11770 are recommended for practical use in low-security environments.

Information technology - Security techniques - Key management - Part 4: Mechanisms based on weak secrets

ICS
35.040
CCS
L04
发布
2006-05
实施

本部分规定了用波长色散X射线荧光光谱法定量筛选电子电气产品中铅、汞、镉、铬和溴的测定方法。 本部分适用于电子电气产品中铅、汞、镉、铬和溴的定量筛选测定,它覆盖了电子电气产品的所有材料类型如聚合物、金属制品和电子制品。 本标准适用于待测元素的浓度范围如表1所示。

Determination of Lead, Mercury, Chromium, Cadmium and Bromine in electrical and electronic equipments - Part 3: Qualitative screening by X-ray fluorescence spectrometric method

ICS
31.020
CCS
L04
发布
2006-04-25
实施
2006-11-15

本部分规定了电感耦合等离子体原子发射光谱法(ICP-AES)测定电子电气产品聚合物(聚四氟乙烯除外)、金属材料、电子元器件中铅(Pb),镉(Cd),铬(Cr)和汞(Hg)的方法。 本部分适用于电子电气产品聚合物(聚四氟乙烯除外)、金属材料、电子元器件中铅(Pb),镉(Cd),铬(Cr)和汞(Hg)的测定,各元素的检出限如表1所示。

Determination of Lead, Cadmium, Chromium and Mercury in electrical and electronic equipments - Part 4: Inductively coupled plasma atomic emission spectrometric method

ICS
31.020
CCS
L04
发布
2006-04-25
实施
2007-01-01

本部分规定了电子电气产品中多溴联苯和多溴二苯醚的气相色谱-氢火焰离子化检测器测定方法。 本部分适用于电子电气产品中多溴联苯和多溴二苯醚的测定。

Determination of polybromobiphenyls and polybromobiphenyl in electrical and electronic equipment - Part 3: GC-FID method

ICS
31.020
CCS
L04
发布
2006-04-25
实施
2006-11-15

本部分规定了电子电气产品聚合物材料中多溴联苯和多溴二苯醚傅立叶变换红外光谱(FT-IR)定性筛选方法。 本部分适用于电子电气产品聚合物材料中多溴联苯和多溴二苯醚的红外定性筛选。

Determination of polybrominatedbiphenyls and polybrominatedbiphenyl ether in electrical and electronic equipments - Part 2: Qualitative screening by infra-red spectrometric method

ICS
31.020
CCS
L04
发布
2006-04-25
实施
2006-11-15

Sn whiskers have been an industrial concern and interesting problem for many years. They are known to cause short circuits in fine-pitch pretinned electrical components [1]. Sn whiskers grow by the addition of material at their base not at their tip (i.e., they grow out of the substrate) [2]. They can grow from asformed electrodeposits, vapor deposited material [3], and intentionally deformed coatings of Sn [4]. Similar whiskers are observed in Cd, In, and Zn [5]. Whiskers appear to be a local response to the existence of residual stress. Compressive residual or external stress is usually considered a precondition for whisker growth [4]. Annealing or melting (reflow in solder terminology) may mitigate the growth for an undetermined period of time. In 1959, Pb additions of a few percent to Sn electroplate were found to greatly reduce the tendency to form whiskers [6] and interest in the subject waned. Legislation that will restrict the use of lead in electronic products sold in the European Union, due to be in effect on July 1, 2006, has led many electronic component suppliers to propose the removal of Pb from tin-lead plating, leaving essentially pure Sn. This approach is the most convenient and the least costly lead-elimination strategy for the majority of component manufacturers. However, for the high-reliability user community, the pure tin strategy presents reliability risks due to the whisker forming tendencies of pure tin and tin alloy plating.

Current Tin Whiskers Theory and Mitigation Practices Guideline

ICS
CCS
L04
发布
2006-03-01
实施

Many companies in the electronics industry have adopted tin-based surface finishes as one of the methods to comply with various legislative lead-free (Pb-free) initiatives, e.g., the European Union’s RoHS directive. However, tin (Sn) and tin alloy surface finishes may be prone to tin whisker formation with associated possible reliability degradation. Appropriate mitigation practices, as described in JEDEC guidance document JP002, may be incorporated to reduce tin whisker propensity to an acceptable level.

Environmental Acceptance Requirements for Tin Whisker Susceptibility of Tin and Tin Alloy Surface Finishes

ICS
CCS
L04
发布
2006-03-01
实施

This Technical Specification is intended to provide guidance on Atmospheric Radiation effects on Avionics electronics used in aircraft operating at altitudes up to 60 000 feet (18,3 km). It defines the radiation environment, the effects of that environment on electronics and provides design considerations for the accommodation of those effects within avionics systems. This Technical Specification is intended to help aerospace equipment manufacturers and designers to standardise their approach to Single Event Effects in Avionics by providing guidance, leading to a standard methodology. Details of the radiation environment are provided together with identification of potential problems caused as a result of the atmospheric radiation received. Appropriate methods are given for quantifying Single Event Effect (SEE) rates in electronic components. The overall system safety methodology should be expanded to accommodate the Single Event Effects rates and to demonstrate the suitability of the electronics for the application at the component and system level.

Process management for avionics - Atmospheric radiation effects - Part 1: Accommodation of atmospheric radiation effects via single event effects within avionics electronic equipment

ICS
49.090
CCS
L04
发布
2006-03
实施

Basic principles for graphical symbols for use on equipment - Guidelines for the adaptation of graphical symbols for use on screens and displays (icons)

ICS
01.080.20;35.180
CCS
L04
发布
2006-01-19
实施
2006-01-19



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