L13 电阻器 标准查询与下载

DLA DSCC-DWG-02001-2002 2012型芯片为1/8瓦精密的涂膜固定电阻器

This drawing describes the requirements for a fixed, film, chip, .200 X .125, 1/8 watt, precision resistor.

RESISTOR, FIXED, FILM, PRECISION, CHIP 1/8 WATT, STYLE 2012

SJ 11267-2002 电子设备用压敏电阻器安全要求

Safety requirements for varistors for use in electronic equipment

BS EN 60115-1:2001+A1:2001 电子设备用固定电阻器.总规范

This part of IEC 60115 is applicable to fixed resistors for use in electronic equipment. It establishes standard terms, inspection procedures and methods of test for use in sectional and detail specifications of electronic components for quality assessment or any other purpose.

Fixed resistors for use in electronic equipment Part 1: Generic specification

BS EN 60539-1:2002 直热式负温度系数热敏电阻器.总规范

This part of IEC 60539 is applicable to directly heated negative temperature coefficient thermistors, typically made from transition metal oxide materials with semiconducting properties. It establishes standard terms, inspection procedures and methods of test for use in sectional and detail specifications of electronic components for quality assessment or any other purpose.

Directly heated negative temperature coefficient thermistors - Generic specification

DLA DSCC-DWG-89039 REV D-2002 固定薄膜精密电阻器

This drawing describes the requirements for a precision, fixed, film, resistor.

RESISTOR, FIXED, FILM, PRECISION

DIN EN 140200:2002 分规范.大功率固定电阻器

The document prescribes the preferred values for characteristics and ratings and also the inspection requirements for fixed power resistors of assessed quality having a rated dissipation of up to 1000 W.

Sectional specification: Fixed power resistors; German version EN 140200:1996 + A1:2001

IEC 60539-1:2002 直热式负温度系数热敏电阻器.第1部分:总规范

This part of IEC 60539 is applicable to directly heated negative temperature coefficient thermistors, typically made from transition metal oxide materials with semiconducting properties. It establishes standard terms, inspection procedures and methods of test for use in sectional and detail specifications of electronic components for quality assessment or any other purpose.

Directly heated negative temperature coefficient thermistors - Part 1: Generic specification

DLA DSCC-DWG-94048 REV E-2002 固定薄膜片状1/2瓦特2010型MELF电阻器

This drawing describes the requirements for a fixed, film, chip resistor (melf), style 2010.

RESISTOR, FIXED, FILM, CHIP, (MELF),1/2 WATT, STYLE 2010

DLA DSCC-DWG-95006 REV D-2002 固定薄膜片状1瓦特2512型MELF电阻器

This drawing describes the requirements for a fixed, film, chip resistor (melf), 0.250 X 0.125.

RESISTOR, FIXED, FILM, CHIP (MELF), 1 WATT, STYLE 2512

DLA DSCC-DWG-95011 REV D-2002 固定薄膜片状1/8瓦特1206型MELF电阻器

This drawing describes the requirements for a fixed, film, chip resistor (melf) 0.120 X 0.060.

RESISTOR, FIXED, FILM, CHIP (MELF), 1/8 WATT, STYLE 1206

DLA DSCC-DWG-87018 REV G-2002 有无铅芯片座16引脚的电阻网络

This drawing describes the requirements for a resistor network, fixed, film, leadless chip carrier, 16 pin, supplied to the requirements of MIL-PRF-914/3 except as noted herein. These networks are available in hermetically sealed and nonhermetically sealed packages.

RESISTOR NETWORKS, 16 PIN, LEADLESS CHIP CARRIER

DLA DSCC-DWG-01002 REV E-2002 2512型1.5瓦特(MELF)单位陶瓷封装胶卷芯片固定电阻器

This drawing describes the requirements for a 1.5 watt, fixed, chip resistor (melf), 0.251 X 0.134, in a flat ceramic package.

RESISTOR, FIXED, FILM, CHIP, 1.5 WATT (MELF), FLAT CERAMIC PACKAGE STYLE 2512

ASTM F1529-02 用直列式四点探测器和双配置程序评定薄膜电阻均匀性的标准试验方法

1.1 This test method covers the direct measurement of the sheet resistance and its variation for all but the periphery (amounting to three probe separations) for circular conducting layers pertinent to silicon semiconductor technology. These layers may be fabricated on substrates of any diameter that is capable of being securely mounted on a prober stage.Note 18212;The equation used to calculate the sheet resistance data from measurements is not perfectly accurate out to the edge of the wafer for probes oriented at an arbitrary angle with respect to a wafer radius. Further, automatic instruments on which this test method will be performed may not have perfect centering of the wafer on the measurement stage. These factors require that the periphery of the layer being measured be excluded. Also, many thin film processes use wafer clamps that preclude forming layers out to the edge of the substrate. The edge exclusion in this test method applies to the film that is being measured, rather than to the substrate. The equation used is based on mathematics developed for layers of circular shape. It is expected to work well for layers of other shapes such as rectangular, if edge exclusion requirements are met; however, the accuracy near the edge of other shapes has not been demonstrated (2).1.2 This test method is intended primarily for assessing the uniformity of layers formed by diffusion, epitaxy, ion implant and chemical vapor, or other deposition processes on a silicon substrate. The deposited film, which may be single crystal, polycrystalline or amorphous silicon, or a metal film, must be electrically isolated from the substrate. This can be accomplished if the layer is of opposite conductivity type from the substrate or is deposited over a dielectric layer such as silicon dioxide. This test method is capable of measuring films as thin as 0.05 m, but particular care is required for establishing reliable measurements for most films in the range below 0.2 m. Films that have a thickness up to half the probe separation can be measured without the use of a thickness-related correction factor. It may give misleading results for films formed by silicon on insulator technologies because of charge or charge trapping in the insulator.1.3 This test method can be used to measure the sheet resistance uniformity of bulk substrates. However, the thickness of the substrate must be known to be constant or must be measured at all positions where sheet resistance values are measured in order to calculate relative variations in resistance reliably. Note 28212;The thickness correction factor for layers that are thicker than 0.5 times the probe spacing is known to vary more rapidly than that for single-configuration four-probe measurements, but such a correction has not yet been published. Until such a correction is published, resistivity values determined by the dual-configuration method will not be accurate for these thicker specimens; however, if the wafer has uniform thickness, variations of resistivity can still be determined by this test method.1.4 This test method can be used to measure sheet resistance values from below 10 m for metal films, to over 25 000 for thin silicon films. However, for films at the upper end of this resistance range, and for films toward the low end of the thickness range, the interpretation of the sheet resistance values may not be straightforward due to various semiconductor effects (3, 4, 5). Note 38212;The principles of this test method are also applicable to other semiconductor materials, but the appropriate conditions and the expected precision have not been established.1.5 This test method uses two different electrical configurations of the four-point probe at each measurement location. It does not require measurement of probe location on the wafer, or probe separations, or of wafer diameter (except to determine edge exclusion for m......

Standard Test Method for Sheet Resistance Uniformity Evaluation by In-Line Four-Point Probe with the Dual-Configuration Procedure

DLA DSCC-DWG-02005-2002 1/2无线圈伤痕可调电阻器(调整型,丝杆开动的)

This drawing describes the requirements for a 0.3 Watt, lead screw actuated, nonwire wound variable resistor.

RESISTORS, VARIABLE, NONWIRE WOUND (ADJUSTMENT TYPE, LEAD-SCREW ACTUATED) 1/2" RECTANGULAR, 0.3 WATTS

DLA DSCC-DWG-87012 REV G-2002 16引脚的全翼的外部贴装的涂膜固定电阻网络

This revision described below has been authorized for the document listed.

RESISTOR NETWORK, FIXED, FILM, SURFACE MOUNT, GULL WING, 16 PIN

DLA DSCC-DWG-87015 REV E-2002 有无铅芯片座28引脚外部贴装的涂膜固定电阻网络

This drawing describes the requirements for a 28 pin, leadless chip carrier, resistor network. These networks are available in hermetically sealed and nonhermetically sealed packages.

RESISTOR NETWORKS, FIXED, FILM, SURFACE MOUNT 28 PIN, LEADLESS CHIP CARRIER

DLA A-A-59742-2002 表面安装低电阻功率芯片诱导体

This CID covers the general requirements for an inductor. Inductors covered by this CID are intended for commercial/industrial applications.

INDUCTOR, CHIP, POWER, LOW RESISTANCE, SURFACE MOUNT

DLA DSCC-DWG-94047 REV E-2002 固定薄膜片状2瓦特3610型MELF电阻器

This drawing describes the requirements for a fixed, film, chip resistor (melf) style 3610.

RESISTOR, FIXED, FILM, CHIP, (MELF), 2 WATT, STYLE 3610

DLA DSCC-DWG-87013 REV G-2002 14引脚的全翼的外部贴装的涂膜固定电阻网络

This drawing describes the requirements for a resistor network, fixed, film, small outline, 14 pin, supplied to the requirements of MIL-PRF-914/1 except as noted herein.

RESISTOR NETWORK, FIXED, FILM, SURFACE MOUNT, GULL WING, 14 PIN

SJ 51432/6-2001 RMK5025型有可靠性指标的片式膜固定电阻器详细规范

本规范适用于RMK5025型有可靠性指标的片式膜固定电阻器。该电阻器包括特性E、H、K和 M，以及除P型引出端外的所有引出端。

Resistors,fixed,file,chip,established reliability,style RMK5025,detail specification for