L40 半导体分立器件综合 标准查询与下载

DIN EN 60191-6-17:2011 半导体器件的机械标准化.第6-17部分:表面安装半导体器件封装外形图绘制的一般规则.堆栈封装的设计指南.细间距球栅阵列和细间距基板栅格阵列(P-PFBGA和P-PFLGA)

Mechanical standardization of semiconductor devices - Part 6-17: General rules for the preparation of outline drawings of surface mounted semiconductor device packages - Design guide for stacked packages - Fine-pitch ball grid array and fine-pitch land gr

BS EN 60191-6-12:2011 半导体装置的机械标准化.表面安装半导体装置封装外形图制备的通用规范.细微间距栅级阵列(FLGA)的设计指南

This part of IEC 60191 provides standard outline drawings, dimensions, and recommended variations for all fine-pitch land grid array packages (FLGA) with terminal pitch of 0,8 mm or less.

Mechanical standardization of semiconductor devices. General rules for the preparation of outline drawings of surface mounted semiconductor device packages. Design guidelines for fine-pitch land grid array (FLGA)

BS EN 60749-21:2011 半导体装置.机械和气候耐受性试验方法.可焊性

This part of IEC 60749 establishes a standard procedure for determining the solderability of device package terminations that are intended to be joined to another surface using tin-lead (SnPb) or lead-free (Pb-free) solder for the attachment. This test method provides a procedure for ‘dip and look’ solderability testing of through hole, axial and surface mount devices (SMDs) as well as an optional procedure for a board mounting solderability test for SMDs for the purpose of allowing simulation of the soldering process to be used in the device application. The test method also provides optional conditions for ageing. This test is considered destructive unless otherwise detailed in the relevant specification. NOTE 1 This test method is in general accord with IEC 60068, but due to specific requirements of semiconductors, the following text is applied. NOTE 2 This test method does not assess the effect of thermal stresses which may occur during the soldering process. Reference should be made IEC 60749-15 or IEC 60749-20.

Semiconductor devices. Mechanical and climatic test methods. Solderability

BS EN 62047-7:2011 半导体装置.微电子机械装置.射频控制和选择所用的微电子机械系统(MEMS)声表面滤波器(BAW)和双工器

Semiconductor devices. Micro-electromechanical devices. MEMS BAW filter and duplexer for radio frequency control and selection

BS EN 60749-29:2011 半导体装置.机械和气候耐受性试验方法.闩锁效应测试

This part of IEC 60749 covers the I-test and the overvoltage latch-up testing of integrated circuits. This test is classified as destructive. The purpose of this test is to establish a method for determining integrated circuit (IC) latchup characteristics and to define latch-up failure criteria. Latch-up characteristics are used in determining product reliability and minimizing "no trouble found" (NTF) and "electrical overstress" (EOS) failures due to latch-up. This test method is primarily applicable to CMOS devices. Applicability to other technologies must be established. The classification of latch-up as a function of temperature is defined in 3.1 and the failure level criteria are defined in 3.2

Semiconductor devices. Mechanical and climatic test methods. Latch-up test

JIS C 5630-6:2011 半导体器件.微电机装置.第6部分:薄膜材料的轴向疲劳测试方法

Semiconductor devices -- Micro-electromechanical devices -- Part 6: Axial fatigue testing methods of thin film materials

IEC 60749-30:2011 半导体器件的机械和环境试验.第30部分:非密封表面安装设备可靠性测试前的预处理

Semiconductor devices - Mechanical and climatic test methods - Part 30: Preconditioning of non-hermetic surface mount devices prior to reliability testing

BS EN 62258-2:2011 半导体压模制品.交换数据格式.

This Part of IEC 62258 specifies the data formats that may be used for the exchange of data which is covered by other parts of the IEC 62258 series, as well as definitions of all parameters used according to the principles and methods of IEC 61360. It introduces a Device Data Exchange (DDX) format, with the prime goal of facilitating the transfer of adequate geometric data between die manufacturer and CAD/CAE user and formal information models that allow data exchange in other formats such as STEP physical file format, in accordance with ISO 10303-21, and XML. The data format has been kept intentionally flexible to permit usage beyond this initial scope. It has been developed to facilitate the production, supply and use of semiconductor die products, including but not limited to: • wafers, • singulated bare die, • die and wafers with attached connection structures, • minimally or partially encapsulated die and wafers. This standard reflects the DDX data format at version 1.3.0

Semiconductor die products. Exchange data formats

DIN EN 60749-23:2011 半导体器件.机械和气候试验方法.第23部分:高温寿命周期(IEC 60749-23-2004 + A1-2011).德文版本EN 60749-23-2004 + A1-2011

Semiconductor devices - Mechanical and climatic test methods - Part 23: High temperature operating life (IEC 60749-23:2004 + A1:2011); German version EN 60749-23:2004 + A1:2011

IEC 62047-5:2011 半导体器件.微电机装置.第5部分:射频(RF)微电子机械系统(MEMS)开关

This part of IEC 62047 describes terminology@ definition@ symbols@ test methods that can be used to evaluate and determine the essential ratings and characteristic parameters of RF MEMS switches. The statements made in this standardization are also applicable to RF (Radio Frequency) MEMS (Micro-Electro-Mechanical Systems) switches with various structures@ contacts (d.c. contact and capacitive contact)@ configurations (series and shunt)@ switching networks (SPST@ SPDT@ DPDT@ etc.)@ and actuation mechanism such as electrostatic@ electro-thermal@ electromagnetic@ piezoelectric@ etc. The RF MEMS switches are promising devices in advanced mobile phones with multi-band/mode operation@ smart radar systems@ reconfigurable RF devices and systems@ SDR (Software Defined Radio) phones@ test equipments@ tunable devices and systems@ satellite@ etc.

Semiconductor devices - Micro-electromechanical devices - Part 5: RF MEMS switches

IEC 62047-9:2011 半导体器件.微型机电器件.第9部分:微机电系统硅片的硅片键合强度测试

This standard describes bonding strength measurement method of wafer to wafer bonding@ type of bonding process such as silicon to silicon fusion bonding@ silicon to glass anodic bonding@ etc.@ and applicable structure size during MEMS processing/assembly. The applicable wafer thickness is in the range of 10 ?? to several millimeters.

Semiconductor devices - Micro-electromechanical devices - Part 9: Wafer to wafer bonding strength measurement for MEMS

IEC 60749-40:2011 半导体器件.机械和气候试验方法.第40部分:使用应变计的板级跌落试验方法

This part of IEC 60749 is intended to evaluate and compare drop performance of a surface mount semiconductor device for handheld electronic product applications in an accelerated test environment@ where excessive flexure of a circuit board causes product failure. The purpose is to standardize test methodology to provide a reproducible assessment of the drop test performance of a surface mounted semiconductor devices while duplicating the failure modes normally observed during product level test. This international standard uses a strain gauge to measure the strain and strain rate of a board in the vicinity of a component. Test method IEC 60749-37 uses an accelerometer to measure the mechanical shock duration and magnitude applied which is proportional to the stress on a given component mounted on a standard board. The detailed specification shall state which test method is to be used. NOTE 1 Although this test can evaluate a structure where the mounting method and its conditions@ the design of a printed wired board@ solder material@ the mounting capability of a semiconductor device@ etc. are combined@ it does not solely evaluate the mounting capability of a semiconductor device. NOTE 2 The result of this test is strongly influenced by the differences between soldering conditions@ the design of the land pattern of a printed wired board@ solder material@ etc. Therefore@ in carrying out this test@ it is necessary to recognize that this test cannot intrinsically guarantee the reliability of the solder joint of the semiconductor devices. NOTE 3 When the mechanical stress which is generated by this test does not occur in the actual application of the device@ implementation of this test is unnecessary.

Semiconductor devices - Mechanical and climatic test methods - Part 40: Board level drop test method using a strain gauge

BS EN 60191-6-17:2011 半导体器件的机械标准化.表面安装半导体器件封装外形图绘制的一般规则.堆栈封装的设计指南.细间距球栅阵列和细间距矩栅阵列(P-PFBGA和PPFLGA)

This part of IEC 60191 provides outline drawings and dimensions for stacked packages and individual stackable packages in the form of FBGA or FLGA.

Mechanical standardization of semiconductor devices. General rules for the preparation of outline drawings of surface mounted semiconductor device packages. Design guide for stacked packages. Fine-pitch ball grid array and fine-pitch land grid array (P-PF

BS EN 62047-8:2011 半导体装置.微电机装置.薄膜拉伸性能测量用带材弯曲试验方法

This international standard specifies the strip bending test method to measure tensile properties of thin films with high accuracy, repeatability, moderate effort of alignment and handling compared to the conventional tensile test. This testing method is valid for test pieces with a thickness between 50 nm and several mm, and with an aspect ratio (ratio of length to thickness) of more than 300. The hanging strip (or bridge) between two fixed supports are widely adopted in MEMS or micro-machines. It is much easier to fabricate these strips than the conventional tensile test pieces. The test procedures are so simple to be readily automated. This international standard can be utilized as a quality control test for MEMS production since its testing throughput is very high compared to the conventional tensile test.

Semiconductor devices. Micro-electromechanical devices. Strip bending test method for tensile property measurement of thin films

NF C96-017-1*NF EN 62374-1:2011 半导体器件.第1部分:金属层之间的时间相关的介质击穿(TDDB)试验.

Semiconductor devices - Part 1 : time-dependent dielectric breakdown (TDDB) test for inter-metal layers.

DIN EN 60749-15:2011 半导体器件.机械和气候试验方法.第15部分-引脚插入式封装设备的耐钎焊温度(IEC 60749-15-2010);德文版本EN 60749-15-2010 + AC-2011

Semiconductor devices - Mechanical and climatic test methods - Part 15: Resistance to soldering temperature for through-hole mounted devices (IEC 60749-15:2010); German version EN 60749-15:2010 + AC:2011

DIN EN 62374-1:2011 半导体器件.第1部分:金属层之间的时间相关的介质击穿(TDDB)试验(IEC 62374-1-2010).德文版本EN 62374-1-2010 + AC-2011

Semiconductor devices - Part 1: Time-dependent dielectric breakdown (TDDB) test for inter-metal layers (IEC 62374-1:2010); German version EN 62374-1:2010 + AC:2011

IEC 60749-7:2011 半导体器件.机械和气候试验方法.第7部分:其他残余气体的分析和内部水分含量的测量

This International Standard specifies the testing and measurement of water vapour and other gas content of the atmosphere inside a metal or ceramic hermetically sealed device. The test is used as a measure of the quality of the sealing process and to provide information about the long-term chemical stability of the atmosphere inside the package. It is applicable to semiconductor devices sealed in such a manner but generally only used for high reliability applications such as military or aerospace. This test is destructive.

Semiconductor devices - Mechanical and climatic test methods - Part 7: Internal moisture content measurement and the analysis of other residual gases

IEC 62047-7:2011 半导体器件.微电机装置.第7部分:无线电频率控制和选择用MEMS BAW滤波器和双工器

This part of IEC 62047 describes terms@ definition@ symbols@ configurations@ and test methods that can be used to evaluate and determine the performance characteristics of BAW resonator@ filter@ and duplexer devices as radio frequency control and selection devices. This standard specifies the methods of tests and general requirements for BAW resonator@ filter@ and duplexer devices of assessed quality using either capability or qualification approval procedures.

Semiconductor devices - Micro-electromechanical devices - Part 7: MEMS BAW filter and duplexer for radio frequency control and selection

NF C96-013-6-21*NF EN 60191-6-21:2011 半导体器件的机械标准化.第6-21部分:表面安装半导体器件封装的外形图绘制的一般规则.小型外壳封装(SOP)的封装尺寸规格用测量方法.

Mechanical standardization of semiconductor devices - Part 6-21 : general rules for the preparation of outline drawings of surface mounted semiconductor device packages - Measuring methods for package dimensions of small outline packages (SOP).