L40 半导体分立器件综合 标准查询与下载

IEC 60749-27:2006 半导体器件.机械和气候试验方法.第27部分:静电放电(ESD)灵敏度测试.机器模型(MM)

This part of IEC 60749 establishes a standard procedure for testing and classifying semiconductor devices according to their susceptibility to damage or degradation by exposure to a defined machine model (MM) electrostatic discharge (ESD). It may be used as an alternative test method to the human body model ESD test method. The objective is to provide reliable, repeatable ESD test results so that accurate classifications can be performed. This test method is applicable to all semiconductor devices and is classified as destructive. ESD testing of semiconductor devices is selected from this test method, the human body model (HBM – see IEC 60749-26) or other test methods in the IEC 60749 series. The MM and HBM test methods produce similar but not identical results. Unless otherwise specified, the HBM test method is the one selected. NOTE 1 This test method does not truly simulate discharge from real machines or metallic tools because the test method uses high parasitic inductance of the test circuit, whereas real machines and metallic tools, whose discharge rise time is approximately 100 ps, have no inductance. NOTE 2 Certain clauses in this test method are in accordance with IEC 61340-3-2.

Semiconductor devices - Mechanical and climatic test methods - Part 27: Electrostatic discharge (ESD) sensitivity testing - Machine model (MM)

IEC 60749-35:2006 半导体器件.机械和气候试验方法.第35部分:塑封电子器件的超声显微检测方法

This part of IEC 60749 defines the procedures for performing acoustic microscopy on plastic encapsulated electronic components. This standard provides a guide to the use of acoustic microscopy for detecting anomalies (delamination, cracks, mould-compound voids, etc.) reproducibly and non-destructively in plastic packages.

Semiconductor devices - Mechanical and climatic test methods - Part 35: Acoustic microscopy for plastic encapsulated electronic components

IEC 60191-2:1966/AMD14:2006 半导体器件的机械标准化.第2部分:尺寸.修改件14

This standard is Mechanical standardization of semiconductor devices - Part 2: Dimensions; Amendment 14.

Mechanical standardization of semiconductor devices - Part 2: Dimensions; Amendment 14

IEC 60749-39:2006 半导体器件.机械和气候试验方法.第39部分:半导体器件使用的有机材料的湿气扩散性和水溶解性的测量

This part of IEC 60749 details the procedures for the measurement of the characteristic properties of moisture diffusivity and water solubility in organic materials used in the packaging of semiconductor components. These two material properties are important parameters for the effective reliability performance of plastic packaged semiconductors after exposure to moisture and being subjected to high-temperature solder reflow. NOTE It is recommended that the moisture absorption parameters used in this standard be obtained from the material suppliers (such as the resin supplier).

Semiconductor devices - Mechanical and climatic test methods - Part 39: Measurement of moisture diffusivity and water solubility in organic materials used for semiconductor components

UL 1557-2006 电绝缘半导体器件

These requirements apply to semiconductor devices of the isolated-mounting type - thyristors, transistors, diodes, and the like, and hybrid modules consisting of combinations of these devices where the voltage does not exceed 600 V ac rms or dc. 1.2 These requirements do not apply to snubber and commutation circuits associated with thyristors, transistors or other analog semiconductor devices. 1.3 These requirements cover the isolation performance of thyristors, transistors, diodes, and the like, and their combination in module packages and constructional features that are pertinent to that performance. 1.4 These requirements apply to isolated semiconductors for use as components in products. Compliance of an isolated semiconductor with these requirements does not determine that the semiconductor is acceptable for use as a component of an end product without further investigation. The acceptability of a semiconductor in any particular product depends upon its acceptability for continued use under the conditions that prevail in actual service.

UL Standard for Safety Electrically Isolated Semiconductor Devices Fourth Edition; Reprint with Revisions through and Including 6/26/2006

DLA SMD-5962-97558 REV A-2006 8输入阳性与门晶体管硅单片电路数字双极微电路

This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN.

MICROCIRCUIT, DIGITAL, BIPOLAR, ADVANCED SCHOTTKY, TTL, 8-INPUT POSITIVE-NAND GATES, MONOLITHIC SILICON

DLA SMD-5962-86872 REV B-2006 硅单块 非与缓冲器,高级肖脱基晶体管-晶体管逻辑电路,数字微型电路

This drawing describes device requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A.

MICROCIRCUIT, DIGITAL, ADVANCED SCHOTTKY TTL, NAND BUFFER, MONOLITHIC SILICON

DLA DSCC-DWG-01037 REV A-2006 1N23WE型,1N23WEM型和1N23WEMR 1N23WG型,1N23WGM和1N23WGMR型,混合硅二极管半导体装置

This drawing covers the performance requirements for a silicon point contact semiconductor diode for use as single units, matched forward pairs, and matched forward and reverse pairs as a mixer in X-band equipment. This drawing may be used as a substitute for MIL-S-19500/322 which has been inactivated (see 6.3).

SEMICONDUCTOR DEVICE, DIODE, SILICON, MIXER, 1N23WE, 1N23WEM AND 1N23WEMR 1N23WG, 1N23WGM AND 1N23WGMR

DLA SMD-5962-90940 REV A-2006 硅单块 晶体管-晶体管逻辑电路兼容输入,带倒转三态输出的八进制总线接收器,双极互补金属氧化物半导体,数字微型电路

This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels is reflected in the PIN.

MICROCIRCUIT, DIGITAL, BIPOLAR CMOS, OCTAL BUS TRANSCEIVER WITH THREE-STATE OUTPUTS, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON

DLA SMD-5962-81023 REV L-2006 硅单片双极场效应晶体管运算扬声器,线性微型电路

This drawing describes device requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A.

MICROCIRCUIT, LINEAR, BI-FET OPERATIONAL AMPLIFIERS, MONOLITHIC SILICON

DLA SMD-5962-90752 REV A-2006 硅单块 晶体管-晶体管逻辑电路兼容输入,带倒转三态输入八进制总线接收器,双极互补金属氧化物半导体数字微型电路

This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels is reflected in the PIN.

MICROCIRCUIT, DIGITAL, BIPOLAR CMOS, OCTAL BUS TRANSCEIVER WITH INVERTING THREE-STATE OUTPUTS, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON

DLA SMD-5962-90938 REV B-2006 硅单块 晶体管-晶体管逻辑电路兼容输入,带开放式控制器输出的八进制缓冲器和行驱动线,双极互补金属氧化物半导体,数字微型电路

This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V).

MICROCIRCUIT, DIGITAL, BIPOLAR CMOS, OCTAL BUFFER AND LINE DRIVER WITH OPEN COLLECTOR OUTPUTS, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON

DLA SMD-5962-90633 REV A-2006 硅单片,四重双极结型场效应晶体管,运算放大器,线性微型电路

This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels is reflected in the PIN.

MICROCIRCUIT, LINEAR, QUAD BIFET, OPERATIONAL AMPLIFIER, MONOLITHIC SILICON

JEDEC JESD88B-2006 JEDEC固态技术术语词典

Initially all definitions from the JEDEC and EIA publications* listed in Annex A were considered for inclusion in this dictionary. The following were not included: (1) terms having a specialized meaning only within the context of a particular publication (usually a test method), e.g., “brush: A toothbrush with a handle made up of nonreactive material …”; and (2) concepts where the publication gives only a symbol and a term but no definition. This dictionary, like any dictionary, is primarily intended to define concepts. For an extensive list of symbols and abbreviations with the corresponding terms for many variations (dc, peak, rms, small signal, large signal, etc.), see JEP104, Reference Guide to Letter Symbols for Semiconductor Devices.

JEDEC Dictionary of Terms for Solid State Technology

DLA SMD-5962-87683 REV C-2006 硅单块 译码器双极飞机(自动)着陆系统晶体管-晶体管逻辑电路,数字微型电路

This drawing describes device requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A.

MICROCIRCUIT, DIGITAL, BIPOLAR ALS TTL, DECODER, MONOLITHIC SILICON

DLA SMD-5962-96586 REV A-2006 抗辐射数字的互补金属氧化物半导体,非倒相六角缓冲器或线路驱动器,晶体管兼容输入硅单片电路线型微电路

This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V).

MICROCIRCUIT, DIGITAL, RADIATION HARDENED, ADVANCED CMOS, NONINVERTING HEX BUFFER/LINE DRIVER WITH THREE-STATE OUTPUTS, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON

DLA SMD-5962-96585 REV A-2006 抗辐射数字的互补金属氧化物半导体4-BIT二元全加速晶体管兼容输入硅单片电路线型微电路

This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M)and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN.

MICROCIRCUIT, DIGITAL, RADIATION HARDENED, ADVANCED CMOS, 4-BIT BINARY FULL ADDER WITH FAST CARRY, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON

DLA SMD-5962-96587 REV A-2006 抗辐射数字的互补金属氧化物半导体,非倒相六角缓冲器或线路驱动器,晶体管兼容输入硅单片电路线型微电路

This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V).

MICROCIRCUIT, DIGITAL, RADIATION HARDENED, ADVANCED CMOS, NONINVERTING HEX BUFFER/LINE DRIVER WITH THREE-STATE OUTPUTS, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON

DLA SMD-5962-90749 REV A-2006 硅单块 晶体管-晶体管逻辑电路兼容输入,带非倒转三态输入八进制缓冲器和行驱动线,双极互补金属氧化物半导体数字微型电路

This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M)and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part orIdentifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels is reflected in the PIN.

MICROCIRCUIT, DIGITAL, BIPOLAR CMOS, OCTAL BUFFER AND LINE DRIVER WITH NONINVERTING THREE-STATE OUTPUTS, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON

DLA SMD-5962-90750 REV A-2006 硅单块 晶体管-晶体管逻辑电路兼容输入,带倒转三态输入八进制总线接收器,双极互补金属氧化物半导体数字微型电路

This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels is reflected in the PIN.

MICROCIRCUIT, DIGITAL, BIPOLAR CMOS, OCTAL BUS TRANSCEIVER WITH INVERTING THREE-STATE OUTPUTS, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON