L40 半导体分立器件综合 标准查询与下载

DLA SMD-5962-90703 REV A-2006 硅单块 晶体管-晶体管逻辑电路兼容输入,四列2输入非倒转多路复用器,高速互补金属氧化物半导体数字微型电路

This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels is reflected in the PIN.

MICROCIRCUIT, DIGITAL, HIGH SPEED CMOS, QUAD 2-INPUT INVERTING MULTIPLEXER, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON

DLA SMD-5962-86874 REV C-2006 硅单块 八进制缓冲器W/高或低激活的三态非倒转输出,高级肖脱基晶体管-晶体管逻辑电路,数字微型电路

This drawing describes device requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A.

MICROCIRCUIT, DIGITAL, ADVANCED SCHOTTKY TTL, OCTAL BUFFER W/LOW& HIGH ENABLED 3-STATE NON- INVERTED OUTPUTS, MONOLITHIC SILICON

DLA SMD-5962-86871 REV D-2006 硅单块 四倍2输入正面非与缓冲器高级低功率肖脱基晶体管-晶体管逻辑电路,双极数字微型电路

This drawing describes device requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A.

MICROCIRCUITS, DIGITAL, BIPOLAR, ADVANCED LOW POWER SCHOTTKY TTL, QUADRUPLE 2-INPUT POSITIVE NAND BUFFERS, MONOLITHIC SILICON

DLA SMD-5962-96543 REV E-2006 抗辐射数字的互补金属氧化物半导体,四重2输入与非施密特触发器,晶体管兼容输入硅单片电路线型微电路

This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V).

MICROCIRCUIT, DIGITAL, RADIATION HARDENED, ADVANCED CMOS, QUADRUPLE 2-INPUT NAND SCHMITT TRIGGER, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON

DLA SMD-5962-86844 REV D-2006 硅单块 无门高级低功率肖脱基晶体管-晶体管逻辑电路或门,双极数字微型电路

This drawing describes device requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A.

MICROCIRCUITS, DIGITAL, BIPOLAR, ADVANCED LOW POWER SCHOTTKY TTL, NOR GATES, MONOLITHIC SILICON

DLA SMD-5962-86869 REV C-2006 硅单块 多路复用器,高级低功率肖脱基晶体管-晶体管逻辑电路,双极数字微型电路

This drawing describes device requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A.

MICROCIRCUIT, DIGITAL, BIPOLAR, ADVANCED LOW POWER SCHOTTKY TTL, MULTIPLEXER, MONOLITHIC SILICON

DLA SMD-5962-86865 REV D-2006 硅单块 非是门高级低功率肖脱基晶体管-晶体管逻辑电路,双极数字微型电路

This drawing describes device requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A.

MICROCIRCUIT, DIGITAL, BIPOLAR, ADVANCED LOW POWER SCHOTTKY TTL, NAND GATE, MONOLITHIC SILICON

DLA SMD-5962-86866 REV C-2006 硅单块 译码器高级低功率肖脱基晶体管-晶体管逻辑电路,双极数字微型电路

This drawing describes device requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A.

MICROCIRCUIT, DIGITAL, BIPOLAR, ADVANCED LOW POWER SCHOTTKY TTL, DECODER, MONOLITHIC SILICON

IEC 60747-1:2006 半导体器件.第1部分:总则

This part of IEC 60747 gives the general requirements applicable to the discrete semiconductor devices and integrated circuits covered by the other parts of IEC 60747 and IEC 60748 (see Annex A).

Semiconductor devices - Part 1: General

DLA SMD-5962-90702 REV A-2006 硅单块 晶体管-晶体管逻辑电路兼容输入,四列2输入非倒转多路复用器,高速互补金属氧化物半导体数字微型电路

This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels is reflected in the PIN.

MICROCIRCUIT, DIGITAL, HIGH SPEED CMOS, QUAD 2-INPUT NONINVERTING MULTIPLEXER, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON

DLA SMD-5962-90701 REV A-2006 硅单块 晶体管-晶体管逻辑电路兼容输入,带设置和重设置的双J-K双稳态多谐振荡器触发电路,高速互补金属氧化物半导体数字微型电路

This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels is reflected in the PIN.

MICROCIRCUIT, DIGITAL, HIGH SPEED CMOS, DUAL J-K FLIP-FLOP WITH SET AND RESET, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON

BS EN 60749-30:2005 半导体器件.机械和气候试验方法.第30部分:可靠性测试之前非气密表面安装器件的预调试

This part of IEC 60749 establishes a standard procedure for determining the preconditioning of non-hermetic surface mount devices (SMDs) prior to reliability testing. The test method defines the preconditioning flow for non-hermetic solid-state SMDs representative of a typical industry multiple solder reflow operation. These SMDs should be subjected to the appropriate preconditioning sequence described in this standard prior to being submitted to specific in-house reliability testing (qualification and/or reliability monitoring) in order to evaluate long term reliability (impacted by soldering stress). NOTE Correlation of moisture-induced stress sensitivity conditions (or moisture sensitivity levels (MSL)) in accordance with IEC 60749-20 and this specification and actual reflow conditions used are dependent upon identical temperature measurement by both the semiconductor manufacturer and the board assembler. Therefore, it is recommended that the temperature at the top of the package on the hottest moisture sensitive SMD during assembly be monitored to ensure that it does not exceed the temperature at which the components are evaluated.

Semiconductor devices - Mechanical and climatic test methods - Part 30: Preconditioning of non-hermetic surface mount devices prior to reliability testing

BS EN 60749-30:2005+A1:2011 半导体装置.机械和气候耐受性试验方法.非密闭式表面安装设备可靠性试验前预处理

Semiconductor devices. Mechanical and climatic test methods. Preconditioning of non-hermetic surface mount devices prior to reliability testing

DLA SMD-5962-86843 REV C-2006 硅单块 逆变器高级低功率肖脱基晶体管-晶体管逻辑电路或门,数字微型电路

This drawing describes device requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A.

MICROCIRCUIT, DIGITAL, ADVANCED LOW-POWER SCHOTTKY TTL, INVERTERS, MONOLITHIC SILICON

DLA SMD-5962-86837 REV C-2006 硅单块 非与门高级低功率肖脱基晶体管-晶体管逻辑电路或门,双极数字微型电路

This drawing describes device requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A.

MICROCIRCUIT, DIGITAL, BIPOLAR ADVANCED LOW POWER, SCHOTTKY TTL, NAND GATES, MONOLITHIC SILICON

DLA SMD-5962-86841 REV D-2006 硅单块 和门高级低功率肖脱基晶体管-晶体管逻辑电路或门,双极数字微型电路

This drawing describes device requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A.

MICROCIRCUIT, DIGITAL, BIPOLAR, ADVANCED LOW POWER SCHOTTKY TTL, AND GATES, MONOLITHIC SILICON

DLA SMD-5962-86834 REV B-2006 硅单块 带三态输出的方形非倒转总线接收器,高级低功率肖脱基晶体管-晶体管逻辑电路,数字微型电路

This drawing describes device requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A.

MICROCIRCUIT, DIGITAL, ADVANCED SCHOTTKY TTL, QUAD NONINVERTING BUS TRANSCEIVERS WITH THREE-STATE OUTPUTS, MONOLITHIC SILICON

DLA SMD-5962-86710 REV B-2006 硅单块 逻辑运算器肖特基晶体管-晶体管逻辑电路,高级数字微型电路

This drawing describes device requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A.

MICROCIRCUIT, DIGITAL, ADVANCED, SCHOTTKY TTL, ARITHMETIC LOGIC UNIT, MONOLITHIC SILICON

DLA SMD-5962-86070 REV C-2006 硅单块 8比特同一校验器,高级肖脱基晶体管-晶体管逻辑电路,数字微型电路

This drawing describes device requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A.

MICROCIRCUIT, DIGITAL, BIPOLAR, ADVANCED SCHOTTKY TTL. 8-BIT IDENTITY COMPARATOR, MONOLITHIC SILICON

JEDEC JESD69A-2006 硅设备规则的信息需求

Customers utilize supplier information when performing component qualification. This information typically includes quality, reliability, electrical and mechanical performance data. In addition, customers frequently request the supplier to complete a profile, or fact sheet, on the component or component family being evaluated. This profile may include information on the materials used within the component as well as the location of the component's manufacture or test. This profile, coupled with the above mentioned data elements, support the customers' evaluation of a device's suitability for use in their application.

Information Requirements for the Qualification of Silicon Devices