L40 半导体分立器件综合 标准查询与下载

NAVY A-A-59766-2005 [代替: 海军型 军用标准-二极管晶体管逻辑电路-18045 G CANC 注意 1,海军型 军用标准-DTL-18045 G,海军型 军用标准-L-18045 F(1),海军型 军用标准-L-18045 F,-18045 E(3),海军型 军用标准-L-18045 E]自浮环式救生船

This commercial item description covers requirements for an inherently buoyant life preserver with collar for use on U. S. Navy surface ships and submarines by personnel performing any shipboard work except flight deck operations.

LIFE PRESERVER, INHERENTLY BUOYANT WITH COLLAR [Superseded: NAVY MIL-DTL-18045 G CANC NOTICE 1, NAVY MIL-DTL-18045 G, NAVY MIL-L-18045 F (1), NAVY MIL-L-18045 F, NAVY MIL-L-18045 E (3), NAVY MIL-L-18045 E]

DLA SMD-5962-87621 REV A-2005 硅单块 带输入自动记录器8比特二进制计数器,低功率肖特基晶体管晶体管逻辑,双极微型电路

This drawing describes device requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A.

MICROCIRCUITS, DIGITAL, BIPOLAR, LOW POWER SCHOTTKY TTL, 8-BIT BINARY COUNTER WITH INPUT REGISTERS, MONOLITHIC SILICON

DLA SMD-5962-85504 REV D-2005 硅单块 带晶体管-晶体管逻辑电路兼容输入的3到8阵列译码器,高速互补金属氧化物半导体,数字微型电路

This drawing describes device requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A.

MICROCIRCUIT, DIGITAL, HIGH SPEED CMOS, 3-TO-8 LINE DECODER WITH TTL COMPATIBLE INPUTS, MONOLITHIC SILICON

DLA SMD-5962-85505 REV C-2005 硅单块 晶体管-晶体管逻辑电路兼容输入,带三态输出八进制缓冲器或行驱动线,高速互补金属氧化物半导体,数字微型电路

This drawing describes device requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A.

MICROCIRCUIT, DIGITAL, HIGH-SPEED CMOS, OCTAL BUFFER/LINE DRIVER WITH THREE-STATE OUTPUTS, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON

DLA DSCC-DWG-04029-2005 2N5927高功率型,硅NPN晶体管半导体器件

This drawing describes the requirements for NPN, silicon, high-power transistors.

SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, HIGH POWER TYPE 2N5927

IEC 60749-30:2005 半导体器件.机械和气候试验方法.第30部分:可靠性试验之前不气密的表面安装器件的预调试

Establishes a standard procedure for determining the preconditioning of non-hermetic surface mount devices (SMDs) prior to reliability testing. The test method defines the preconditioning flow for non-hermetic solid-state SMDs representative of a typical

Semiconductor devices - Mechanical and climatic test methods - Part 30: Preconditioning of non-hermetic surface mount devices prior to reliability testing

DLA SMD-5962-91574 REV C-2005 输入场效应晶体管,差异操作放大器,直线式混合微型电路

This drawing documents five product assurance classes as defined in paragraph 1.2.3 and MIL-PRF-38534. Achoice of case outlines and lead finishes which are available and are reflected in the Part or Identifying Number (PIN).

MICROCIRCUIT, HYBRID, LINEAR, DIFFERENTIAL OPERATIONAL AMPLIFIER, FET INPUT

DLA SMD-5962-01503 REV A-2005 600V或500V同门保护自定义混合微电路场效应晶体管

This drawing documents five product assurance classes as defined in paragraph 1.2.3 and MIL-PRF-38534. A choice of case outlines and lead finishes which are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of radiation hardness assurance levels are reflected in the PIN.

MICROCIRCUIT, HYBRID, CUSTOM, FIELD EFFECT TRANSISTORS, 600 VOLT OR 500 VOLT, WITH GATE PROTECTION

DLA SMD-5962-85126 REV C-2005 硅单块 缓冲器低频率肖脱基晶体管-晶体管逻辑电路,双极数字微型电路

This drawing describes device requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A.

MICROCIRCUIT, DIGITAL, BIPOLAR, LOW-POWER SCHOTTKY TTL, BUFFERS, MONOLITHIC SILICON

DLA SMD-5962-85096 REV E-2005 硅单块 多路复用器高级低功率肖脱基晶体管-晶体管逻辑电路,双极数字微型电路

This drawing describes device requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A.

MICROCIRCUIT, DIGITAL, BIPOLAR, ADVANCED LOW-POWER SCHOTTKY TTL, MULTIPLEXER, MONOLITHIC SILICON

DLA SMD-5962-96719 REV E-2005 抗辐射互补金属氧化物半导体非倒相八角双向的三状态输出母线,晶体管兼容输入硅单片电路数字微电路

This drawing documents three product assurance class levels consisting of high reliability (device classes Q and M), space application (device class V) and for appropriate satellite and similar applications (device class T). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels is reflected in the PIN. For device class T, the user is encouraged to review the manufacturer’s Quality Management (QM) plan as part of their evaluation of these parts and their acceptability in the intended application.

MICROCIRCUIT, DIGITAL, RADIATION HARDENED, ADVANCED CMOS, NONINVERTING OCTAL BIDIRECTIONAL BUS TRANSCEIVER WITH THREE-STATE OUTPUTS, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON

DLA SMD-5962-96529 REV B-2005 抗辐射数字的互补金属氧化物半导体三重3输入晶体管兼容输入硅单片电路线型微电路

This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN).

MICROCIRCUIT, DIGITAL, RADIATION HARDENED, ADVANCED CMOS, TRIPLE 3-INPUT NOR GATE, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON

DLA SMD-5962-86840 REV E-2005 硅单块 计数器,高级低功率肖脱基晶体管-晶体管逻辑电路或门,双极数字微型电路

This drawing describes device requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A.

MICROCIRCUIT, DIGITAL, BIPOLAR, ADVANCED LOW-POWER SCHOTTKY TTL, COUNTER, MONOLITHIC SILICON

DLA SMD-5962-96897 REV C-2005 高电压金属氧化物半导体场效应晶体管运算放大器硅单片电路线型微电路

This drawing documents five product assurance classes as defined in paragraph 1.2.3 and MIL-PRF-38534. A choice of case outlines and lead finishes which are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of radiation hardness assurance levels are reflected in the PIN.

MICROCIRCUIT, LINEAR, OPERATIONAL AMPLIFIER, SINGLE, HIGH VOLTAGE, MOSFET, MONOLITHIC SILICON

DLA SMD-5962-96717 REV E-2005 抗辐射互补金属氧化物半导体,倒相八角缓冲器或三状态输出线路激励器,晶体管兼容输入硅单片电路数字微电路

his drawing documents three product assurance class levels consisting of high reliability (device classes Q and M), space application (device class V) and for appropriate satellite and similar applications (device class T). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels is reflected in the PIN. For device class T, the user is encouraged to review the manufacturer’s Quality Management (QM) plan as part of their evaluation of these parts and their acceptability in the intended application.

MICROCIRCUIT, DIGITAL, RADIATION HARDENED, ADVANCED CMOS, INVERTING OCTAL BUFFER/LINE DRIVER WITH THREE-STATE OUTPUTS, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON

GJB 923A-2004 半导体分立器件外壳通用规范

本规范规定了军用半导体分立器件外壳（包括底座、盖（帽））生产和交付、质量和可靠性保证的一般要求。 本规范适用于军用半导体分立器件外壳（包括底座、盖（帽），以下简称外壳）。

General specification for packages of semiconductor discrete devices

DLA SMD-5962-92046 REV A-2004 硅单块 稳压器振动器,小功率肖特基晶体管晶体管逻辑电路,双极数字微型电路

This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels is reflected in the PIN.

MICROCIRCUIT, DIGITAL, BIPOLAR, LOW-POWER SCHOTTKY, TTL, VOLTAGE-CONTROLLED OSCILLATOR, MONOLITHIC SILICON

DLA SMD-5962-91753 REV A-2004 硅单块 带有源低允许三态非倒转输出的八进制缓冲器,改进型肖特基晶体管晶体管逻辑电路,双极数字微型电路

This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels is reflected in the PIN.

MICROCIRCUIT, DIGITAL, BIPOLAR, ADVANCED SCHOTTKY, TTL, OCTAL BUFFER WITH ACTIVE LOW ENABLE THREE-STATE NON-INVERTED OUTPUTS, MONOLITHIC SILICON

DLA SMD-5962-91627 REV A-2004 硅单块 四列二输入是非驱动器,改进型肖特基晶体管晶体管逻辑电路,双极数字微型电路

This drawing documents two product assurance classlevelsconsisting of high reliability (device classes Q and M)and space application (device class V).

MICROCIRCUIT, DIGITAL, BIPOLAR, ADVANCED SCHOTTKY, TTL, QUADRUPLE 2-INPUT NAND DRIVER, MONOLITHIC SILICON

DLA SMD-5962-90800 REV A-2004 硅单块 8比特逐步渐近自动记录器,低功率肖特基晶体管晶体管逻辑电路双极数字微型电路

This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels is reflected in the PIN.

MICROCIRCUIT, DIGITAL, BIPOLAR, LOW-POWER SCHOTTKY, TTL, 8-BIT SUCCESSIVE APPROXIMATION REGISTER, MONOLITHIC SILICON