L40 半导体分立器件综合 标准查询与下载

ASTM F1892-04 半导体器件电离辐射(总剂量)效应试验的标准指南

1.1 This guide presents background and guidelines for establishing an appropriate sequence of tests and data analysis procedures for determining the ionizing radiation (total dose) hardness of microelectronic devices for dose rates below 300 rd(SiO2)/s. These tests and analysis will be appropriate to assist in the determination of the ability of the devices under test to meet specific hardness requirements or to evaluate the parts for use in a range of radiation environments.1.2 The methods and guidelines presented will be applicable to characterization, qualification, and lot acceptance of silicon-based MOS and bipolar discrete devices and integrated circuits. They will be appropriate for treatment of the effects of electron and photon irradiation.1.3 This guide provides a framework for choosing a test sequence based on general characteristics of the parts to be tested and the radiation hardness requirements or goals for these parts.1.4 This guide provides for tradeoffs between minimizing the conservative nature of the testing method and minimizing the required testing effort.1.5 Determination of an effective and economical hardness test typically will require several kinds of decisions. A partial enumeration of the decisions that typically must be made is as follows:1.5.1 Determination of the Need to Perform Device CharacterizationFor some cases it may be more appropriate to adopt some kind of worst case testing scheme that does not require device characterization. For other cases it may be most effective to determine the effect of dose-rate on the radiation sensitivity of a device. As necessary, the appropriate level of detail of such a characterization also must be determined.1.5.2 Determination of an Effective Strategy for Minimizing the Effects of Irradiation Dose Rate on the Test ResultThe results of radiation testing on some types of devices are relatively insensitive to the dose rate of the radiation applied in the test. In contrast, many MOS devices and some bipolar devices have a significant sensitivity to dose rate. Several different strategies for managing the dose rate sensitivity of test results will be discussed.1.5.3 Choice of an Effective Test MethodologyThe selection of effective test methodologies will be discussed.1.6 Low Dose RequirementsHardness testing of MOS and bipolar microelectronic devices for the purpose of qualification or lot acceptance is not necessary when the required hardness is 100 rd(SiO2) or lower.1.7 SourcesThis guide will cover effects due to device testing using irradiation from photon sources, such as 60Co irradiators, 137Cs irradiators, and low energy (approximately 10 keV) X-ray sources. Other sources of test radiation such as linacs, Van de Graaff sources, Dymnamitrons, SEMs, and flash X-ray sources occasionally are used but are outside the scope of this guide.1.8 Displacement damage effects are outside the scope of this guide, as well.1.9 The values stated in SI units are to be regarded as the standard.

Standard Guide for Ionizing Radiation (Total Dose) Effects Testing of Semiconductor Devices

DLA SMD-5962-96903 REV B-2004 双行接收器晶体管兼容硅单片电路线型微电路

This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN.

MICROCIRCUIT, LINEAR, DUAL LINE RECEIVER, TTL COMPATIBLE, MONOLITHIC SILICON

DLA SMD-5962-92090 REV A-2004 硅单块 10比特缓冲器或行驱动线,改进型肖特基晶体管晶体管逻辑电路,双极数字微型电路

This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels is reflected in the PIN.

MICROCIRCUIT, DIGITAL, BIPOLAR, ADVANCED SCHOTTKY, TTL, 10- BIT BUFFER/LINE DRIVER, MONOLITHIC SILICON

DLA SMD-5962-92066 REV A-2004 硅单块 带自动记录器的双向翻译器,八进制发射极耦合逻辑或晶体管-晶体管逻辑电路,发射极耦合逻辑,数字微型电路

This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M)and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels is reflected in the PIN.

MICROCIRCUIT, DIGITAL, ECL, OCTAL ECL/TTL, BI-DIRECTIONAL TRANSLATOR WITH REGISTER, MONOLITHIC SILICON

DLA SMD-5962-04228-2004 硅单片互补晶体管-晶体管逻辑电路,装有预先装置及脉冲计时器,双向二进制计算器的高级氧化物半导体数字微型电路

This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN.

MICROCIRCUITS, DIGITAL, ADVANCED CMOS, UP/DOWN BINARY COUNTER WITH PRESET AND RIPPLE CLOCK, TTL COMPLATIBLE INPUTS, MONOLITHIC SILICON

SJ 50033/163-2003 半导体分立器件3DK457型功率开关晶体管详细规范

Semiconductor discrete device Detail specification of type 3DK457 for power switching transistors

BS EN 60749-14:2003 半导体器件.机械和气候试验方法.端子的耐久性

This part of IEC 60749 provides various tests for determining the integrity between the lead/package interface and the lead itself when the lead(s) are bent due to faulty board assembly followed by rework of the part for re-assembly. For hermetic packages, it is recommended that this test be followed by hermeticity tests in accordance with IEC 60749-8 to determine if there are any adverse effects from the stresses applied to the seals as well as to the leads. This test, including each of the test conditions, is considered destructive and is only recommended for qualification testing. This standard is applicable to all through-hole devices and surface-mount devices requiring lead forming by the user.

Semiconductor devices - Mechanical and climatic test methods - Robustness of terminations (lead integrity)

NF C96-022-25*NF EN 60749-25:2003 半导体器件.机械和气候试验方法.第25部分:温度循环

Semiconductor devices - Mechanical and climatic test methods - Part 25 : temperature cycling.

DIN EN 60749-8:2003 半导体器件.机械和气候试验方法.第8部分:密封

The project is applicable to semiconductor devices (discrete devices and integrated circuits). The object of this test method is to determine the leak rate of semiconductor devices.

Semiconductor devices - Mechanical and climatic test methods - Part 8: Sealing (IEC 60749-8:2002 + Corr. 1:2003 + Corr. 2:2003); German version EN 60749-8:2003

DIN EN 60749-22:2003 半导体器件.机械和气候试验方法.第22部分:粘接强度

The project is applicable to semiconductor devices (discrete devices and integrated circuits). The object of this test is to measure bond strength or determine compliance with specified bond strength requirements.

Semiconductor devices - Mechanical and climatic test methods - Part 22: Bond strength (IEC 60749-22:200 + Corr. 1:2003); German version EN 60749-22:2003

DIN EN 60749-36:2003 半导体器件.机械和气候试验方法.第36部分:稳态加速

Semiconductor devices - Mechanical and climatic test methods - Part 36: Acceleration, steady state (IEC 60749-36:2003); German version EN 60749-36:2003

DIN EN 60749-31:2003 半导体器件.机械和气候试验方法.第31部分:塑料封装器件的易燃性(内部引起的)

The project is applicable to semiconductor devices (discrete devices and integrated circuits). The object of this test is to determine whether the device ignites due to internal heating caused by excessive overloads.

Semiconductor devices - Mechanical and climatic test methods - Part 31: Flammability of plastic encapsulated devices (internally induced) (IEC 60749-31:2002 + Corr. 1:2003); German version EN 60749-31:2003

DIN EN 60749-1:2003 半导体器件.机械和气候试验方法.第1部分:总则

This part of DIN EN 60749 is applicable to semiconductor devices (discrete devices and integrated circuits) and establishes provisions common to all other parts of the series.

Semiconductor devices - Mechanical and climatic test methods - Part 1: General (IEC 60749-1:2002 + Corr. 1:2003); German version EN 60749-1:2003

NF C96-022-22*NF EN 60749-22:2003 半导体装置.机械和气候试验方法.第22部分:粘接强度

Semiconductor devices - Mechanical and climatic test methods - Part 22 : bond strength.

NF C96-022-32*NF EN 60749-32:2003 半导体器件.机械和气候试验方法.第32部分:塑料封装器件的易燃性(外部引起)

Semiconductor devices - Mechanical and climatic test methods - Part 32 : flammability of plastic-encapsulated devices (externally induced).

IEC 60191-6-10:2003 半导体器件的机械标准化.第6-10部分:表面安装半导体器件封装外形图绘制的一般规则.P-VSON的尺寸

Provides the common outline drawings and dimensions for all types of structures and composed materials of plastic very thin small outline non-lead package (P-VSON).

Mechanical standardization of semiconductor devices - Part 6-10: General rules for the preparation of outline drawings of surface mounted semiconductor device packages; Dimensions of P-VSON

IEC 60191-2:1966/AMD9:2003 半导体器件的机械标准化.第2部分:尺寸.修改件9

This is Amendment 9 to IEC 60191-2-2003 (Mechanical standardization of semiconductor devices - Part 2: Dimensions)

Mechanical standardization of semiconductor devices - Part 2: Dimensions; Amendment 9

BS EN 60749-25:2003 半导体器件.机械和气候试验方法.温度循环

This part of IEC 60749 provides a test procedure for determining the ability of semiconductor devices and components and/or board assemblies to withstand mechanical stresses induced by alternating high and low temperature extremes. Permanent changes in electrical and/or physical characteristics can result from these mechanical stresses. This test method is in general accord with IEC 60068-2-14 but, due to specific requirements of semiconductors, the clauses of this standard apply. This test method applies to single, dual and triple chamber temperature cycling and covers component and solder interconnection testing. In single chamber cycling, the load is placed in a stationary chamber and is heated or cooled by introducing hot, ambient or cold air into the chamber. In dual chamber cycling, the load is placed on a moving platform that shuttles between stationary chambers maintained at fixed temperatures. In triple chamber temperature cycling, the load is moved between the three chambers.

Semiconductor devices - Mechanical and climatic test methods - Temperature cycling

IEC 60749-27:2003 半导体器件.机械和气候试验方法.第27部分:静电放电灵敏度测试.机器模型

Establishes a standard procedure for testing and classifying semiconductor devices according to their susceptibility to damage or degradation by exposure to a defined machine model electrostatic discharge. The objective is to provide reliable, repeatable

Semiconductor devices - Mechanical and climatic test methods - Part 27: Electrostatic discharge (ESD) sensitivity testing; Machine model (MM)

IEC 60749-26:2003 半导体器件.机械和气候试验方法.第26部分:静电放电敏感性试验.人体模型

Establishes a standard procedure for testing and classifying semiconductor devices according to their susceptibility to damage or degradation by exposure to a defined human body model electrostatic discharge. The objective is to provide reliable, repeata

Semiconductor devices - Mechanical and climatic test methods - Part 26: Electrostatic discharge (ESD) sensitivity testing; Human body model (HBM)