L40 半导体分立器件综合 标准查询与下载

DLA SMD-5962-85506 REV D-2003 硅单块 晶体管-晶体管逻辑电路兼容输入,带三态输出八进制总线接收器,高速互补金属氧化物半导体,数字微型电路

This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN.

MICROCIRCUIT, DIGITAL, HIGH SPEED CMOS, OCTAL BUS TRANSCEIVER WITH THREE-STATE OUTPUTS, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON

DLA SMD-5962-86867 REV D-2003 硅单块 晶体管-晶体管逻辑电路兼容输入,八进制易识破的止动销,高速互补金属氧化物半导体,数字微型电路

This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN.

MICROCIRCUIT, DIGITAL, HIGH SPEED CMOS, OCTAL TRANSPARENT LATCH WITH THREE-STATE OUTPUTS, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON

DLA SMD-5962-85507 REV E-2003 硅单块 晶体管-晶体管逻辑电路兼容输入,带三态输出八进制双稳态多谐振荡器触发器,高速互补金属氧化物半导体,数字微型电路

This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN.

MICROCIRCUIT, DIGITAL, HIGH SPEED CMOS, OCTAL D-TYPE FLIP-FLOP WITH THREE-STATE OUTPUTS, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON

DIN EN 60749-17:2003 半导体器件.机械和气候试验方法.第17部分:中子辐射

The neutron irradiation test is performed to determine the susceptibility of semiconductor devices to degradation in the neutron environment. The tests described herein are applicable to integrated circuits and discrete semiconductor devices. This test is intended for military- and space-related applications. It is a destructive test.

Semiconductor devices - Mechanical and climatic test methods - Part 17: Neutron irradiation (IEC 60749-17:2003); German version EN 60749-17:2003

DIN EN 60749-18:2003 半导体器件.机械和气候试验方法.第18部分:电离辐射(总剂量)

The test procedure described in this standard defines the reqirements for testing packaged semiconductor integrated circuits and discrete semiconductor devices for ionisind radiation (total dose) effects from a cobalt-60 gamma ray source. In addition this procedure provides an accelerated annealing test for estimating low dose rate ionising radiation effects on devices

Semiconductor devices - Mechanical and climatic test methods - Part 18: Ionizing radiation (total dose) (IEC 60749-18:2002); German version EN 60749-18:2003

DIN EN 60749-16:2003 半导体器件.机械和气候试验方法.第16部分:粒子碰撞噪声探测(PIND)

The test described in this standard is used to detet the presence of loose particles inside a cavity device, such as, for example, chips of ceramic, pieces of bonding wire or solder balls (prills).

Semiconductor devices - Mechanical and climatic test methods - Part 16: Particle impact noise detection (PIND) (IEC 60749-16:2003); German version EN 60749-16:2003

DIN EN 60749-5:2003 半导体器件.机械和气候试验方法.第5部分:稳态温度湿度偏差寿命试验

This part of DIN EN 60749 provides a steady-state temperature and humidity bias life test for the purpose of evaluating the reliability of non-hermetic packaged solid-state devices in humid environments.

Semiconductor devices - Mechanical and climatic test methods - Part 5: Steady-state temperature humidity bias life test (IEC 60749-5:2003); German version EN 60749-5:2003

DLA SMD-5962-87630 REV D-2003 硅单块 带三态输出和晶体管-晶体管逻辑电路兼容输入的非倒转行驱动线或缓冲器,快速互补金属氧化物半导体,数字微型电路

This drawing describes device requirements for MIL-STD-883 compliant

MICROCIRCUIT, DIGITAL, FAST CMOS, NONINVERTING LINE DRIVER/BUFFER WITH THREE-STATE OUTPUTS, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON

DLA SMD-5962-87655 REV B-2003 硅单块 晶体管-晶体管逻辑电路兼容输入,带三态输出的倒转八进制行驱动线或缓冲器,高速互补金属氧化物半导体,数字微型电路

This drawing describes device requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A.

MICROCIRCUIT, DIGITAL, FAST CMOS, INVERTING OCTAL LINE DRIVER/BUFFER WITH THREE-STATE OUTPUTS, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON

DLA SMD-5962-97533 REV C-2003 低电压互补金属氧化物半导体,四重2输入阳性与门晶体管兼容输入硅单片电路数字微电路

This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN.

MICROCIRCUIT, DIGITAL, LOW VOLTAGE CMOS, QUADRUPLE 2-INPUT POSITIVE NAND GATE, MONOLITHIC SILICON

DLA SMD-5962-95832 REV C-2003 双极互补金属氧化物半导体,3.3伏特八角触发D类三状态输出双稳态多谐振荡器,晶体管兼容输入硅单片电路线型微电路

This drawing documents two product assurance class levels consisting of high reliability (device classes Q andM) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN.

MICROCIRCUIT, DIGITAL, ADVANCED BIPOLAR CMOS, 3.3- VOLT OCTAL EDGE-TRIGGERED D-TYPE FLIP FLOP WITH BUS HOLD, THREE-STATE OUTPUTS, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON

DLA SMD-5962-85130 REV C-2003 硅单块 晶体管-晶体管逻辑电路兼容输入,带三态输出八进制缓冲器 高速互补金属氧化物半导体,数字微型电路

This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M)and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN.

MICROCIRCUIT, DIGITAL, HIGH-SPEED CMOS, OCTAL BUFFER WITH THREE-STATE OUTPUTS, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON

BS EN 60191-6-4:2003 半导体器件的机械标准化.绘制表面安装半导体器件封装外形图的一般规则.焊球网格阵列封装尺寸的测量方法

This part of IEC 60191 covers the requirements for the measuring methods of ball grid array (BGA) dimensions.

Mechanical standardization of semiconductor devices - General rules for the preparation of outline drawings of surface mounted semiconductor device packages - Measuring methods for package dimensions of ball grid array (BGA)

NF C96-022-17*NF EN 60749-17:2003 半导体装置.机械和气候试验方法.第17部分:中子辐照

Semiconductor devices - Mechanical and climatic test methods - Part 17 : neutron irradiation.

NF C90-530:2003 使用条形码和二维符号的电子元器件的产品包装标签

Product package labels for electronic components using bar code and two-dimensional symbologies.

IEC 60749-13:2002/COR1:2003 半导体器件.机械和气候试验方法.第13部分:盐性环境

This is Technical Corrigendum 1 to IEC 60749-13-2002 (Semiconductor devices -Mechanical and climatic test methods -Part 13:Salt atmosphere)

Semiconductor devices - Mechanical and climatic test methods - Part 13: Salt atmosphere

IEC 60749-31:2002/COR1:2003 半导体器件.机械和气候试验方法.第31部分:塑料密封器件的易燃性(内部引起的)

This is Technical Corrigendum 1 to IEC 60749-31-2002 (Dispositifs a semiconducteurs -Methodes d'essais mecaniques et climatiques -Partie31:Inflammabilite des dispositifs a encapsulation plastique (cas d'une cause interne d'inflammation))

Semiconductor devices - Mechanical and climatic test methods - Part 31: Flammability of plastic-encapsulated devices (internally induced)

IEC 60749-3:2002/COR1:2003 半导体器件.机械和气候试验方法.第3部分:外观检验

This is Technical Corrigendum 1 to IEC 60749-3-2002 (Semiconductor devices -Mechanical and climatic test methods -Part 3:External visual examination)

Semiconductor devices - Mechanical and climatic test methods - Part 3: External visual examination

IEC 60749-32:2002/COR1:2003 半导体器件.机械和气候试验方法.第32部分:塑料密封器件的易燃性(外部引起的)

This is Technical Corrigendum 1 to IEC 60749-32-2002 (Semiconductor devices -Mechanical and climatic test methods -Part 32:Flammability of plastic-encapsulated devices(externally induced))

Semiconductor devices - Mechanical and climatic test methods - Part 32: Flammability of plastic-encapsulated devices (externally induced)

IEC 60749-1:2002/COR1:2003 半导体器件.机械和环境试验方法.第1部分:总则

This standard is Semiconductor devices - Mechanical and climatic test methods - Part 1: General; Corrigendum 1.

Semiconductor devices - Mechanical and climatic test methods - Part 1: General