L50 光电子器件综合 标准查询与下载

BOCA ARTICLE 21 NFPC-1990 电石和乙炔发生器的焊接或切割.第8版

The following is a listing of the standards referenced in this code, the effective date of the standard, the promulgating agency of the standard and the section(s) of this code that refers to the standard.

Welding or Cutting, Calcium Carbide and Acetylene Generators Eighth Edition

UL 1577-1989 光隔离器

Optical isolators

DIN 4000-20:1988 第20部分:光电子半导体元件用物品特性表格设计

Tabular layouts of article characteristics for opto-electronic semiconductor devices

JIS C 5931:1988 光学开关的试验方法

この規格は，石英系光ファイバを用いた光伝送に使用する光スイッチの試験方法について規定する。

Test methods for optical switches

IEC 60891:1987 晶体硅光伏器件实测I-V特性的温度和辐照度校正方法

Includes procedures for the determination of temperature coefficients, internal series resistance and curve correction factor. The procedures are applicable over an irradiance range of +/- 30 % of the level at which the measurements are made. They are li

Procedures for temperature and irradiance corrections to measured I-V characteristics of crystalline silicone photovoltaic devices

JEDEC JESD12-2-1986 基于蜂窝的集成电路基准设置标准

BENCHMARKS #i - #9 can be found in JEBEC Standard No. 12. BENCHMARKS #I0 - #,I6 are contained in this S t a n d a r d as l i s t e d below

Standard for Cell-Based Integrated Circuit Benchmark Set

GOST 4.431-1986 产品质量指标系统.光电探测器.目录术语

Стандарт устанавливает номенклатуру основных показателей качества фотоэлектрическиз полупроводниковых приемников излучения и фотопри

Product-quality index system. Photoelectric detectors. Nomenclature of indices

JEDEC JESD12-1985 门阵列基准电设置标准

EDEC Standards and Publications contain material that has been prepared, progressively reviewed, and approved through the JEDEC Cwncil level and subsequently reviewed and approved by the EIA General Counsel.

Standard for Gate Array Benchmark Set

SJ 2354.13-1983 雪崩光电二极管倍增因子的测试方法

Method of measurement for multiplication factor of PIN and avalanche photodiodes

SJ 2354.14-1983 雪崩光电二极管过剩噪声指数的测试方法

Method of measurement for excess noise factor of PIN and avalanche photodiodes

SJ 2354.11-1983 PIN、雪崩光电二极管列阵盲区宽度的测试方法

Method of measurement for width of blind zone of PIN and avalanche photodiode matrix

SJ 2354.10-1983 PIN、雪崩光电二极管列阵串光因子的测试方法

Method of measurement for cross-light factor of PIN and avalanche photodiodes matrix

SJ 2354.12-1983 雪崩光电二极管反向击穿电压温度系数的测试方法

Method of measurement for temperature factor of reverse breakdown voltage of PIN and avalanche photodiodes

SJ 2247-1982 半导体光电子器件外形尺寸

Outlines dimension for semiconductor optoelectronic devices

NF Z68-021:1980 机器的数控 符号

Commande numérique des machines. Symboles

NF C96-550/A1:1980 光电子学光电设备特殊测量方法

Optoelectronic Special measurement methods for optoelectronic devices

Optoelectronic Special measurement methods for optoelectronic devices

JEDEC EIA-435-1976 微弱信号晶体管散射参数测量标准

The symbols and terms of this document are contained in JEDEC Publication No. 77 and are not in conflict with those in IEC Publication 147-OC. The measurement procedures are similar to those published in IEC.

Measurement of Small-Signal Transistor Scattering Parameters

JEDEC TENTSTD12-1973 硒电流急冲抑制器的推荐标准

The Suppressor furnished under t h i s Standard s h a l l be a product which has been tested and meets the definitions and minimum requirements specified herein.

Suggested Standard for Selenium Surge Suppressors

JEDEC EIA-397-1972 晶闸管推荐标准

These standards, adopted by the Electronic Industries Association and issued jointly by the Electronic Industries Association and the National Electrical Manufacturers Association, were formulated by the Solid State Products Council of the Joint Electron Device Engineering Councils. The JEDEC solid State Products Council is sponsored by both EIA and NEMA to develop standards, proposals, and data dealing with semiconductor devices.

Recommended Standards for Thyristors

JEDEC EIA-340-1967 |Cre|测量标准

This standard offers an easily-measured parameter which is one of the significant characteristics in determining the stability of a transistor intended for small-signal operation. The measurement technique allows rapid testing. Its close correlation to AC stability will help to establish the interchangeability of a device.

Measurement of/Cre/