L55 微电路综合 标准查询与下载

ANSI/VITA 41.2-2006 VXS 4X系列快速IO层协议标准

This proposed standard builds upon the VXS proposed standard by describing how VXS boards may communicate in a standard way using the Serial RapidIO protocol. Pinouts for both the payload and switch boards are given, as well as the value of the VXS key which indicates this protocol.

VXS 4X Serial Rapid IO Layer Protocol Standard

ANSI/VITA 41.0-2006 VXS标准

The VXS proposed standard defines physical features that enable high-speed communication in a VME compatible system. These features include: addition of a high speed connector to the VME64x board in the P0/J0 position, a 6U by 160mm by 6HP Eurocard format board with many high speed connectors which may act as a switch, and the backplane/chassis infrastructure needed to support these features

VXS

DLA SMD-5962-89868 REV A-2006 硅单片,可调正稳压器,线性微型电路

This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels is reflected in the PIN.

MICROCIRCUIT, LINEAR, POSITIVE, ADJUSTABLE, VOLTAGE REGULATOR, MONOLITHIC SILICON

DLA SMD-5962-86721 REV E-2006 硅单块 总线驱动器直线型微型电路

This drawing describes device requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A.

MICROCIRCUIT, LINEAR, RS-422/RS-423 LINE DRIVER, MONOLITHIC SILICON

DLA SMD-5962-97548 REV A-2006 同步4-BIT计数器硅单片电路数字双极微电路

This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M)and space application (device class V).

MICROCIRCUIT, DIGITAL, BIPOLAR, SYNCHRONOUS 4-BIT COUNTER, MONOLITHIC SILICON

DLA SMD-5962-87657 REV C-2006 硅单块 带自动测量调整装置,带自动测量调整装置的射频或中频增强器,双极直线型微型电路

This drawing describes device requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A.

MICROCIRCUIT, LINEAR, BIPOLAR, RF/IF AMPLIFIER WITH AGC, MONOLITHIC SILICON

DLA SMD-5962-94599 REV B-2006 硅单片,在功率损耗上装有自动储存的8K X 8非易失性静态随机存取存储器,数字记忆微型电路

This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN).

MICROCIRCUIT, MEMORY, DIGITAL, 8K X 8 NONVOLATILE STATIC RAM WITH AUTOMATIC STORE ON POWER LOSS, MONOLITHIC SILICON

DLA SMD-5962-88554 REV C-2006 硅单片固定24伏阳性调节器线性微电路

This drawing describes device requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A.

MICROCIRCUIT, LINEAR, POSITIVE REGULATOR, FIXED 24 VOLT, MONOLITHIC SILICON

DLA SMD-5962-94704 REV C-2006 512 X 18 X 2时钟先入先出双数字储存器互补金属氧化物半导体硅单片电路线型微电路

This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M)and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN.

MICROCIRCUIT, MEMORY, DIGITAL, BICMOS, 512 X 18 X 2 CLOCKED FIFO, MONOLITHIC SILICON

DLA SMD-5962-89588 REV A-2006 硅单片稳压器线性微型电路

This drawing describes device requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A.

MICROCIRCUIT, LINEAR, VOLTAGE REGULATOR, MONOLITHIC SILICON

DLA SMD-5962-94717 REV B-2006 64K X 1-BIT的连续配置可编程序的只读存储器硅单片电路线型微电路

This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M)and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN.

MICROCIRCUIT, MEMORY, DIGITAL, CMOS 64K X 1-BIT SERIAL CONFIGURATION PROM, MONOLITHIC SILICON

DLA SMD-5962-89728 REV B-2006 硅单片,准确电压基准,线性微型电路

This drawing describes device requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A.

MICROCIRCUIT, LINEAR, PRECISION VOLTAGE REFERENCE, MONOLITHIC SILICON

DLA SMD-5962-96743 REV A-2006 1 MEG X 16动态随机存储器数字的硅单片电路微电路

This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN.

MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 1 MEG X 16 DRAM, MONOLITHIC SILICON

DLA MIL-PRF-38534 F-2006 混合微电路一般规格

This specification establishes the general performance requirements for hybrid microcircuits, Multi- Chip Modules (MCM) and, similar devices and the verification requirements for ensuring that these devices meet the applicable performance requirements. Verification is accomplished through the use of one of two quality programs (Appendix A). The main body of this specification describes the performance requirements and the requirements for obtaining a Qualified Manufacturers List (QML) listing. The appendices of this specification are intended for guidance to aid a manufacturer in developing their verification program. Detail requirements, specific characteristics, and other provisions that are sensitive to the particular intended use should be specified in the applicable device acquisition specification

HYBRID MICROCIRCUITS, GENERAL SPECIFICATION FOR

DLA SMD-5962-87608 REV F-2006 硅单块 取样保持,直线型微型电路

This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels is reflected in the PIN.

MICROCIRCUIT, LINEAR, SAMPLE AND HOLD, MONOLITHIC SILICON

DLA SMD-5962-99558 REV F-2006 微型电路,线型,辐射加固,高速,双路输出脉冲宽度调节器,单块硅

This drawing documents three product assurance class levels consisting of high reliability (device classes Q and M), space application (device class V) and for appropriate satellite and similar applications (device class T).

MICROCIRCUIT, LINEAR, RADIATION HARDENED, HIGH SPEED, DUAL OUTPUT PULSE WIDTH MODULATOR, MONOLITHIC SILICON

DLA SMD-5962-96889 REV A-2006 4M X 1动态随机存取存储器硅单片电路数字记忆微电路

This drawing establishes minimum requirements for microcircuit die to be supplied under the Qualified Manufacturers List (QML) Program. QML microcircuit die meeting the requirements of MIL-PRF-38535 and the manufacturers approved QM plan for use in monolithic microcircuits, multichip modules (MCMs), hybrids, electronic modules, or devices using chip and wire designs in accordance with MIL-PRF-38534 are specified herein. Two product assurance classes consisting of military high-reliability (device class Q) and space application (device class V) are reflected in the Part or Identification Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels shall be reflected in the PIN.

MICROCIRCUIT DIE, MEMORY, DIGITAL, CMOS, 4M X 1 DYNAMIC RANDOM ACCESS MEMORY (DRAM), MONOLITHIC SILICON

DLA SMD-5962-99593 REV B-2006 微型电路,线型,单路高速电压反馈,运算放大器,单块硅

This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels is reflected in the PIN.

MICROCIRCUIT, LINEAR, SINGLE, HIGHSPEED, VOLTAGE FEEDBACK, OPERATIONAL AMPLIFIER, MONOLITHIC SILICON

DLA SMD-5962-87710 REV H-2006 硅单块 低功率双操作扩大器,直线型微型电路

This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels is reflected in the PIN.

MICROCIRCUIT, LINEAR, LOW POWER DUAL OPERATIONAL AMPLIFIER, MONOLITHIC SILICON

DLA SMD-5962-95608 REV B-2006 数字的1K X 36双重通信口时钟先入先出硅单片电路线型微电路

This drawing documents three product assurance class levels consisting of space application (device class V),high reliability (device classes M and Q), and nontraditional performance environment (device class N).

MICROCIRCUIT, MEMORY, DIGITAL, 1K X 36 DUAL PORT CLOCKED FIFO, MONOLITHIC SILICON