L55 微电路综合 标准查询与下载

DLA SMD-5962-89783 REV A-2001 硅单片,低压低功率准确双重运算放大器,线性微型电路

This drawing describes device requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A.

MICROCIRCUIT, LINEAR, PRECISION, LOW VOLTAGE, MICROPOWER, DUAL OPERATIONAL AMPLIFIER, MONOLITHIC SILICON

DLA SMD-5962-87802 REV C-2001 硅单片8位四方数位类比转换器线性微电路

This drawing describes device requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A.

MICROCIRCUIT, LINEAR, 8-BIT QUAD DIGITAL-TO- ANALOG CONVERTER MONOLITHIC SILICON

DLA SMD-5962-94581 REV A-2001 硅单片,低功率高速JFET四重运算扬声器,线性微型电路

This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN.

MICROCIRCUIT, LINEAR, LOW POWER, HIGH SPEED, JFET QUAD OPERATIONAL AMPLIFIER, MONOLITHIC SILICON

DLA SMD-5962-95551 REV B-2001 双重的功率电压比较器硅单片电路线型微电路

This drawing documents three product assurance class levels consisting of space application (device class V), high reliability (device classes M and Q), and nontraditional performance environment (device class N). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN. For device class N, the user is cautioned to assure that the device is appropriate for the application environment.

MICROCIRCUIT, LINEAR, DUAL MICROPOWER VOLTAGE COMPARATORS, MONOLITHIC SILICON

ARINC 628P1-3 ITEM 9.0-2001 功率电路

Power Circuitry

Power Circuitry

DLA SMD-5962-89921 REV A-2001 硅单片,多电流准确齐纳管基准,线性微型电路

This drawing describes device requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A.

MICROCIRCUIT, LINEAR, PRECISION, MULTI-CURRENT, ZENER, REFERENCE, MONOLITHIC SILICON

DLA SMD-5962-89975 REV C-2001 硅单片,宽带缓冲放大器,线性微型电路

This drawing describes device requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A.

MICROCIRCUIT, LINEAR, WIDEBAND, BUFFER AMPLIFIER, MONOLITHIC SILICON

IEC 60748-2-12:2001 半导体器件 集成电路 第2-12部分：数字集成电路 可编程逻辑器件（PLDs）空白详细规范

Semiconductor devices -Integrated circuits - Part 2-12: Digital integrated circuits - Blank detail specification for programmable logic devices (PLDs) Marking and ordering information...................................................................... 1.1 Marking.................................................................................................... 1.2 Ordering information................................................................................. Application related description........................................................................... Specification of the function............................................................................... 3.1 Block diagram.......................................................................................... 3.2 Identification and function of terminals..................................................... 3.3 Functional description.............................................................................. 3.4 Family-related characteristics................................................................... Limiting values (absolute maximum rating system)............................................ Operating conditions (within the specified operating temperature range)........... Electrical characteristics................................................................................... 6.1 Static characteristics................................................................................ 6.2 Dynamic characteristics............................................................................ 6.3 Timing diagram........................................................................................ 6.4 Capacitances........................................................................................... Programming..................................................................................................... 7.1 Programming mode.................................................................................. 7.2 Erasing mode (if applicable)..................................................................... 7.3 Number of programming-erasing cycles (where appropriate).................... 7.4 Data retention information........................................................................ Additional information....................................................................................... Screening (if required)...................................................................................... Quality assessment procedures......................................................................... 10.1 Qualification approval procedures............................................................ 10.2 Capability approval procedures................................................................ Structural similarity procedures........................................................................ Test conditions and inspection requirements.................................................... 12.1 General................................................................................................... 12.2 Sampling requirements and formation of inspection lots.......................... 12.3 Inspection tables..................................................................................... 12.4 Delayed deliveries................................................................................... Additional measurement method....................................................................... 13.1 Data retention test (destructive test)........................................................ 13.2 Write/erase endurance: number of programming cycles (destructive test) 13.3 Programmability......................................................................................

Semiconductor devices - Integrated circuits - Part 2-12: Digital integrated circuits; Blank detail specification for programmable logic devices (PLDs)

DLA SMD-5962-89654 REV D-2001 硅单片,8位高速交流/直流转变器,线性微型电路

This drawing describes device requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A.

MICROCIRCUIT, LINEAR, HIGH SPEED 8-BIT A/D CONVERTER, MONOLITHIC SILICON

DLA SMD-5962-89698 REV A-2001 硅单片,12位取样模拟数字转换器,线性微型电路

This drawing describes device requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A.

MICROCIRCUITS, LINEAR, ANALOG-TO-DIGITAL CONVERTER, 10-BIT SAMPLING, MONOLITHIC SILICON

DLA SMD-5962-95623 REV B-2001 类似体多路器硅单片电路线型微电路

This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN.

MICROCIRCUIT, LINEAR, ANALOG MULTIPLEXER, MONOLITHIC SILICON

DLA SMD-5962-94686 REV A-2001 12-BIT,5 MSPS交流电和交流电转换器硅单片电路线型微电路

This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN.

MICROCIRCUIT, LINEAR, A/D CONVERTER, 12-BIT, 5 MSPS, MONOLITHIC SILICON

DLA SMD-5962-94600 REV C-2001 硅单片,双重准确斩波稳定扬声器,线性微型电路

This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN.

MICROCIRCUIT, LINEAR, DUAL PRECISION CHOPPER STABILIZED OPERATIONAL AMPLIFIER, MONOLITHIC SILICON

DLA SMD-5962-89697 REV B-2001 硅单片,16位电压输出数字模拟转换器,线性微型电路

This drawing describes device requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A.

MICROCIRCUIT, LINEAR, 16-BIT, VOLTAGE OUTPUT DAC, MONOLITHIC SILICON

DLA SMD-5962-90815 REV B-2001 硅单块 高速缓冲器直线式微型电路

This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN.

MICROCIRCUIT, LINEAR, HIGH SPEED BUFFER, MONOLITHIC SILICON

SJ/T 10805-2000 半导体集成电路.电压比较器测试方法的基本原理

本规范规定了半导体集成电路电压比较器电特性测试方法的基本原理。 本规范适用于半导体集成电路电压比较器电特性的测试。

Semiconductor integrated circuits.General principles of measuring methods for voltage comparators

SJ/T 10804-2000 半导体集成电路.电平转换器测试方法的基本原理

本规范规定了半导体集成电路电子转换器电特性测试方法的基本原理。 本标准适用于半导体集成电路双极型电子转换器电特性的测试。

Semiconductor integrated circuits.General principles of measuring methods for level translator

IEC TR 61352:2000 集成电路记忆法与符号

本标准向集成电路的设计和制造人员推荐：使用器件的符号及记忆法宜与限定符号一致。预计达到两个目的，即： －－对白盒子符号，给出标准名称； －－对灰盒子符号，希望限制可能变化的范围。 白盒子符号：符号中元件的功能完全由标准化方法描述的符号，相关的规则和解释可在GB／T 4728．12的第一篇至第五篇和GB／T 4728．13的第一篇至第五篇及第六篇第17章、第18章中找到。 灰盒子符号：符号中元件的功能，通常由于其复袈性，有些用非白盒子符号所用的方法，特别是用可参照的支持文件描述的符号。相关的规则和解释见GB／T 4728．12中第六篇。 第2章表中，第二列是字母W，表明相关的标记可用于白盒子符号也可用于灰盒子符号中；第二列是字母G，意味着有关标记只能用于灰盒子符号中，或只能用于方框间的白盒子符号中(如[PDN]作为“电源关掉”的附加信息)。 在用字母m的地方，m应按各种情况的要求用相应的值、标识号、周期时间、位数或顺序数代替(增益调节的Am除外)。示出ml×m2的地方，ml应由可存储最大字数代替，m2应由数据输出的数日代替，见GB／T 4728．12的第50章和第51章。

Mnemonics and symbols for integrated circuits

DLA SMD-5962-91619 REV A-2000 硅单块 窗口电压比较器,直线式微型电路

This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN.

MICROCIRCUIT, LINEAR, WINDOW VOLTAGE COMPARATOR, MONOLITHIC SILICON

DLA SMD-5962-90842 REV B-2000 硅单块 操作增强器,低移动精密直线式微型电路

This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN.

MICROCICUIT, LINEAR, PRECISION, LOW DRIFT, OPERATIONAL AMPLIFIER, MONOLITHIC SILICON