日立高新NB5000聚焦离子束&电子束装置_ 参数_指标_优点_优势

参数指标

Specifications

FIB	Accelerating voltage		1 - 40kV
	Beam current		50 nA or more @ 40kV (CP)
	SIM resolution		5nm @ 40kV (CP)
	Magnification		×60 - ×250,000
	Ion source		Ga Liquid Metal Ion Source
	Lens system		Low Cs 2-stage electrostatic lens system
SEM	Accelerating voltage		0.5 - 30kV
	SEM resolution		1.0nm @ 15kV (CP)
	Magnification	High Mag mode	×250 - ×800,000
		Low Mag mode	×70 - ×2,000
	Electron source		ZrO/W Schottky emission
	Lens system		3-stage electromagnetic lens reduction system
Signal selection	SEM		Upper SE, Lower SE, Absorbed current^(*1)
	FIB		Lower SE, Absorbed current^(*1)
Eucentric stage	Traverse range		X: 50mm (30mm^(2)), Y: 50mm (30mm^(2)), Z: 22mm
			T: -1.5 - 58.3°, R: 360°
Sample size	Maximum diameter		Φ50mm (Φ30mm^(*2))
Deposition	Material		Tungsten/Carbon (changeable)
Micro-sampling	Probe exchange		Load lock type
	Additional function		Touch sensing, Absorbed current imaging^(*1)

CP:Beam Cross Point

^(*1):Optional accessory
^(*2):When side entry stage is ordered