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聚焦离子束电子束双束系统-用于金属、半导体、电介质、多层膜结构等固体样品上制备微纳结构；高质量定点TEM样品制备；离子束刻蚀、离子束沉积、电子束沉积；可进行磁性金属样品的沉积等功能
聚焦离子束电子束双束系统-用于金属、半导体、电介质、多层膜结构等固体样品上制备微纳结构；高质量定点TEM样品制备；离子束刻蚀、离子束沉积、电子束沉积；可进行磁性金属样品的沉积等功能
Helios G4 UX DualBeam for Materials Science
Fastest and easiest preparation of the highest quality samples for HR S/TEM and APT
The latest technological innovations of the FEI Helios G4 DualBeam™, in combination with the easiest to use, most comprehensive software and FEI's application expertise, allow for the fastest and easiest preparation of site-specific, ultra-thin HR-S/TEM samples for a wide range of materials. In order to achieve the highest quality results, final polishing with very low energy ions is required to minimize surface damage on the sample. FEI's most advanced Phoenix Focused Ion Beam (FIB) column not only delivers high-resolution imaging and milling at high voltages, but it now extends unmatched FIB performance down to accelerating voltages as low as 500V, enabling the creation of ultra-thin TEM lamella with sub-nm damage layers.
Experience the Advantages of the Helios G4 UX DualBeam
Fastest and easiest preparation of the highest-quality, site-specific, ultra-thin TEM and APT samples using the new Phoenix ion column with unmatched low-voltage performance
Shortest time to nanoscale information using best-in-class Elstar™ electron column
Reveal the finest details with the next-generation UC+ monochromator technology with higher current, enabling sub-nanometer performance at low energies
The most complete sample information with sharp, refined, and charge-free contrast obtained from up to 7 integrated in-column and below-the-lens detectors.
The highest quality, multi-modal subsurface and 3D information with the most precise targeting of the region of interest using optional Auto Slice & View™ 4 (AS&V4) software.
Fast, accurate, and precise milling and deposition of complex structures with critical dimensions of less than 10 nm Precise sample navigation tailored to individual application needs thanks to the high stability and accuracy of the 150 mm Piezo stage and in-chamber Nav-Cam.
Artifact-free imaging based on integrated sample cleanliness management and dedicated imaging modes such as SmartScan™ and DCFI.
Highest quality, ultra-thin TEM lamella (LED sample) produced with the Helios G4 DualBeam using iFast-based guided TEM sample preparation workflow.
High-resolution, cross-section imaging of the Sn alloy sample.
Helios G4 UX DualBeam™
Helios G4 UX is part of the fourth generation of the industry-leading Helios DualBeam™ family. It is carefully designed to meet the needs of scientists and engineers, combining the innovative Elstar electron column with high-current UC+ technology for extreme high-resolution imaging and the highest materials contrast with the superior Phoenix ion column for the fastest, easiest, and most precise high-quality sample preparation and 3D characterization, even on the most challenging samples.
Helios G4 UX DualBeam 材料科学
zei快zei简便的高分辨/TEM 和 APT 的高质量样品制备
Helios G4 DualBeam™的zei新技术创新, 结合zei简单易用、zei全面的软件和FEI的应用专长, 允许zei快、zei简单的特定位点、超薄的高分辨/TEM 的制备各种材料的样品。为了达到zei高的质量效果, 需要用非常低的能量离子进行zei终抛光, 以减少样品表面的损伤。飞氏zei先进的凤凰聚焦离子束 (FIB) 柱不仅在高压下提供高分辨率的成像和铣削, 而且扩展无可匹敌的FIB性能下降到加速电压低至 500V, 创造了超薄TEM 的创建鳞片具 sub-nm 损伤层。
体验Helios G4 UX DualBeam 的优势
zei快和zei简单的制备zei高品质, 特定位点, 超薄的 TEM 和 APT 样品使用新的凤凰离子柱与无与伦比的低压性能
使用zei佳 Elstar™电子柱，在zei短时间获得纳米信息
揭示了下一代 UC + 单色仪技术的zei好的细节与更高的电流, 在低能量下获得亚纳米级性能
从多达7集成的内柱和 在透镜下的探测器条件下，获得zei完整的样品信息与尖锐、精细和免费的对比。
zei高质量, 多模态的地下和3D 信息以zei精确的目标区域的利益使用可选的自动切片和 View™ 4 (AS&V4) 软件。
快速, 准确, 精确的铣削和沉积的关键尺寸小于10纳米的复杂结构
由于 150 mm 压电工作台和室内导航凸轮的高稳定性和精确性, 精确的样本导航适合于个人应用需求。
基于集成样本清洁度管理和专用成像模式 (如 SmartScan™和 DCFI) 的无工件成像。
zei高质量, 超薄 tem 薄片 (LED 样品) 产生的Helios G4 DualBeam 使用 iFast-based 指导 tem 样品准备工作流程。
锡合金样品的高分辨率, 横断面成像。
Helios G4 UX DualBeam™
Helios G4 UX 是第四代业界领先的Helios DualBeam™家族的一部分。它是精心设计的, 以满足科学家和工程师的需要, 结合了创新的 Elstar 电子柱与高电流 UC + 技术的极端高分辨率成像和zei高的材料对比与优越的凤凰离子柱zei快, zei简单, zei精确的高质量样品制备和3D 表征, 甚至对于zei具挑战性的样品。
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