突触可塑性PCR基因芯片可以同时检测学习和记忆过程中参与突触改变的84个关键基因的表达。对于回忆，大脑可以有两种方式记录以往事件：短期记忆和长期记忆。其中长期记忆需要突触物理性的改变，并伴有神经突触相关基因表达的变化。突触可塑性的研究已经发现神经元的活动变化后，即早基因(IEGs)的表达立即改变。IEGs介导的长时程增强（LTP）可以增强突触连接并巩固记忆。然而并非所有事件都成为长期记忆，相反的突触重塑反应（长时程抑制，LTD），在突触可塑性也起到了核心作用。LTD相关基因的表达变化可以改变神经元突触受体的循环，从而增强或抑制突触连接。该芯片包含IEGs，其他参与LTP和LTD的重要基因，以及参与突触重塑的关键受体基因等。利用实时定量PCR，研究者可以方便并且可信地对参与突触可塑性的相关基因进行同时检测。
Immediate-Early Response Genes (IEGs): ARC, BDNF, CEBPB, CEBPD, CREB1, CREM, EGR1, EGR2, EGR3, EGR4, FOS, HOMER1, JUN, JUNB, KLF10, MMP9 (Gelatinase B), NFKB1, NFKBIB (TRIP9), NGF, NPTX2, NR4A1, NTF3, PCDH8, PIM1, PLAT (tPA), RELA, RGS2, RHEB, SRF, TNF. Late Response Genes: INHBA, SYNPO. Long Term Potentiation (LTP): ADCY1, ADCY8, BDNF, CAMK2A, CAMK2G, CDH2 (N-cadherin), CNR1, GABRA5, GNAI1, GRIA1, GRIA2, GRIN1, GRIN2A, GRIN2B, GRIN2C, GRIN2D, MAPK1, MMP9 (Gelatinase B), NTF4, NTRK2, PLCG1, PPP1CA, PPP1CC, PPP3CA, PRKCA, PRKCG, RAB3A, YWHAQ (14-3-3). Long Term Depression (LTD): GNAI1, GRIA1, GRIA2, GRIA3, GRIA4, GRIP1, GRM1, GRM2, IGF1, MAPK1, NOS1, NGFR, PICK1, PLAT (tPA), PPP1CA, PPP1CC, PPP1R14A (CPI-17), PPP2CA, PPP3CA, PRKCA, PRKG1. Cell Adhesion: ADAM10, CDH2 (N-cadherin), GRIN2A, GRIN2B, NCAM1, PCDH8, PPP2CA, RELN, TNF. Extracellular Matrix & Proteolytic Processing: ADAM10, MMP9 (Gelatinase B), PLAT (tPA), RELN, TIMP1. CREB Cofactors: AKT1, CAMK2G, GRIN1, GRIN2A, GRIN2B, GRIN2C, GRIN2D, MAPK1 (ERK2), PPP1CA, PPP1CC. Neuronal Receptors: EPHB2, GABRA5, GRIA1, GRIA2, GRIA3, GRIA4, GRIN1, GRIN2A, GRIN2B, GRIN2C, GRIN2D, GRM1, GRM2, GRM3, GRM4, GRM5, GRM7, GRM8, NTRK2. Postsynaptic Density: ADAM10, ARC, DLG4 (PSD95), GRIA1, GRIA3, GRIA4, GRIN1, GRIN2A, GRIN2B, GRIN2C, GRM1, GRM3, HOMER1, PICK1, SYNPO. Others: KIF17, SIRT1.