硅光电探测器参数指标

     仪器简介：
 

  硅光电探测器（Si）
  ———室温型探测器，波长范围：200-1100nm

 
 技术参数：
 

  型号列表及主要技术指标：
  技术指标＼型号名称                         DSi200 紫敏硅探测器             DSi300 硅探测器
                                                              进口紫外增强型                         国产低暗电流型
  有效接收面积(mm2)                            100(Φ11.28)                              100(10×10)
  波长范围(nm)                                       200-1100                                         300-1100
  峰值波长(nm)                                             -------                                            800±20
  峰值波长响应度(A/W)                               0.52                                                    >0.4
  254nm的响应度(A/W)                           0.14(>0.09)                                      -------
  响应时间(μs)                                                 5.9                                              -------
  工作温度范围(℃)                                    -10～+60                                           -------
  储存温度范围(℃)                                     -20～+70                                         -------
  分流电阻RSH(MΩ)                                     10(>5)                                            -------
  等效噪声功率NEP (W/√Hz)                     4.5×10-13                                     -------
  暗电流(25℃；-1V)                                       -------                              1X10-8—5×10-11 A
  结电容(pf)                                                    4500                                          <3000(-10V)
  信号输出模式                                               电流                                                 电流
  输出信号极性                                              正（P）                                          正（P）