Pulse rise time

<1 ps (down to 0.4 ps)

Bandwidth*

0.01 .. 2.5 THz

Excitation wavelength

700 .. 1600 nm

(<860nm recommended)

Avg. excitation power

0.1 .. 4 mW

Cantilever material

InGaAs (n-type)

Lateral tip radius

8 .. 12 μm

Cantilever length

570 .. 600 μm