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特性
优化用于约800 nm的激光器，脉冲宽度< 100 fs，100 MHz的重复率
每个芯片上1个包裹偶极结构
低温生长砷化镓偶极结构
| Item # | TERA8-1 |
|---|---|
| Photoconductive Material | LT GaAs |
| Bandwidth | >4 THz |
| Dipole Structures | 20 μma |
| Gap Size | 5 μm |
| Substrate Size | 5 mm x 5 mm x 0.35 mm |
| Electrical Conection | Bonded Structure on PCB (40 mm x 40 mm) |
| Operating Conditions | |
| Average Optical Power | < 10 mW |
| Pulse Duration | < 100 fs |
| Repitition Rate | 100 MHz (80 - 250 MHz) |
| Bias Voltage | Recommended: ±35 V Max: ±40 V |
