大光敏面锗(Ge)光电...
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大光敏面Ge光电二极管-近红外波长

Microphotons的 MP-FDG50锗光电探测器(germanium (Ge) photodiode )是用来测量连续激光或者脉冲激光在工作波长 800 to 1800 nm的完美选择. 此探测器为TO-8 封装,便于集成到系统也便于客户单独使用。

Specifications



Sensor Material

Ge


Wavelength Range

800 - 1800 nm


Peak Wavelength

1550 nm (Typ.)


Responsivity

0.85 A/W (Typ.)


Active Area Diameter

19.6 mm2 (?5 mm)


Rise/Fall Time (RL = 50 Ohms, 10 V)

220 ns / 220 ns (Typ.)


NEP, Typical (1550 nm)

4.0 x 10-12  W/Hz1/2 (Typ.)


Dark Current (5 V)

60 μA (Max.)


Capacitance (10 V)
Capacitance (0 V)

1800 pF (Max.)
16000 pF (Max.)


Shunt Resistance

4000 Ohm (Typ.)


Package

TO-8


 


Max Ratings



Max Bias (Reverse) Voltage

10 V


Operating Temperature

-55 to 60 °C


Storage Temperature

-55 to 60 °C



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