电学特性

FEOL Electrical Characterization
In IC device manufacturing electrical characteristics of layers and films must be well controlled. Conventional contact test methods on monitor wafers, like the 4-point probe FSM offers, do no longer meet modern requirements. State of the art IC feature extremely thin, often only a few atomic layers of material. FSM's contactless RsL probe for sheet resistance and leakage as well as the non-destructive EOT probe for IC-CV measurements meet the challenge to characterize ultra shallow junctions and thin dielectric materials on production wafers.

FSM offers contact and non-contact electrical characterization metrology used in FEOL device making.

FEOL电学特性

在集成电路器件制造中，必须很好地控制层和膜的电特性。监控晶片上的传统接触测试方法，如4点探针FSM，已不再满足现代要求。最先进的集成电路特点是非常薄，通常只有几个原子层的材料。FSM用于测量薄片电阻和泄漏的非接触式RsL探头，以及用于IC-CV测量的非破坏性EOT探头，满足了在生产晶圆上表征超浅结和薄介电材料的挑战。

FSM提供用于FEOL设备制造的接触式和非接触式电气特性计量。