The purpose of this part of IEC 60749 is to test and determine the effect on all semiconductor electronic devices of storage at elevated temperature without electrical stress applied. This test is considered non-destructive but should preferably be used for device qualification. If such devices are used for delivery, the effects of this highly accelerated stress test will need to be evaluated. In general, this test of storage at high temperature is in conformity with IEC 60068-2-48 but, due to specific requirements of semiconductors, the clauses of this standard apply.
IEC 60749-6-2002由国际电工委员会 IX-IEC 发布于 2002-04。
IEC 60749-6-2002 在中国标准分类中归属于: L40 半导体分立器件综合,在国际标准分类中归属于: 31.080.01 半导体器分立件综合。
IEC 60749-6-2002 半导体器件.机械和气候试验方法.第6部分:高温下储存 由 IEC 60749-1996 变更而来。
IEC 60749-6-2002 半导体器件.机械和气候试验方法.第6部分:高温下储存 由 IEC 60749 AMD 1-2000 变更而来。
IEC 60749-6-2002 半导体器件.机械和气候试验方法.第6部分:高温下储存 由 IEC 60749 AMD 2-2001 变更而来。
IEC 60749-6-2002 半导体器件.机械和气候试验方法.第6部分:高温下储存 由 IEC 60749 Edition 2.2-2002 变更而来。
Copyright ©2007-2022 ANTPEDIA, All Rights Reserved
京ICP备07018254号 京公网安备1101085018 电信与信息服务业务经营许可证:京ICP证110310号