IPC TM-650 2.4.22.2-1995
衬底曲率:硅片与电介质沉积

Substrate Curvature: Silicon Wafers with Deposited Dielectrics

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标准号

IPC TM-650 2.4.22.2-1995

发布

1995年

发布单位

美国电子电路和电子互连行业协会

 

 

适用范围

Recommended Standards and Publications are adopted by IPC without regard to whether their adoption may involve patents on articles, materials, or processes. By such action, IPC does not assume any liability to any patent owner, nor do they assume any obligation whatever to parties adopting the Recommended Standard or Publication. Users are also wholly responsible for protecting themselves against all claims of liabilities for patent infringement

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