Add paragraph 1.5 and note 2. Table I, IIN ripple current, subgroups 2 and 3 for nonRHA device types 01 and 02; delete device type 02. Add a new line for nonRHA device type 02, subgroups 2 and 3 with a maximum limit of 80 mAp-p. IIN ripple current for the RHA device type 02, subgroups 1, 2, 3; change the maximum limit from 75 mAp-p to 120 mAp-p. Table 1 add new note 2 for enhanced low dose rate effects (renumber remaining notes in sequence). Paragraph 4.3.5.a, add enhanced low dose rate effects.
DLA SMD-5962-93193 REV E-2007由美国国防后勤局 US-DLA 发布于 2007-06-04。
DLA SMD-5962-93193 REV E-2007 在中国标准分类中归属于: L58 混合集成电路。
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