DLA SMD-5962-99511 REV C-2006
微型电路,数字线型,辐射加固双路反向MOSFET驱动器,单块硅

MICROCIRCUIT, DIGITAL-LINEAR, RADIATION HARDENED DUAL INVERTING MOSFET DRIVER, MONOLITHIC SILICON

DLA SMD-5962-99511 REV C-2006 发布历史

This drawing documents three product assurance class levels consisting of high reliability (device classes Q and M), space application (device class V) and for appropriate satellite and similar applications (device class T). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN. For device class T, the user is encouraged to review the manufacturer’s Quality Management (QM) plan as part of their evaluation of these parts and their acceptability in the intended application.

DLA SMD-5962-99511 REV C-2006由美国国防后勤局 US-DLA 发布于 2006-08-24。

DLA SMD-5962-99511 REV C-2006 在中国标准分类中归属于: L55 微电路综合，在国际标准分类中归属于: 31.200 集成电路、微电子学。

DLA SMD-5962-99511 REV C-2006的历代版本如下：

• 2006年08月24日 DLA SMD-5962-99511 REV C-2006 微型电路,数字线型,辐射加固双路反向MOSFET驱动器,单块硅

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标准号

DLA SMD-5962-99511 REV C-2006

发布日期

2006年08月24日

实施日期

废止日期

无

中国标准分类号

L55

国际标准分类号

31.200

发布单位

US-DLA

适用范围

This drawing documents three product assurance class levels consisting of high reliability (device classes Q and M), space application (device class V) and for appropriate satellite and similar applications (device class T). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN. For device class T, the user is encouraged to review the manufacturer’s Quality Management (QM) plan as part of their evaluation of these parts and their acceptability in the intended application.