31.200 集成电路、微电子学 标准查询与下载

GSO IEC/TR 61967-4-1:2015 集成电路 电磁辐射测量 150 kHz 至 1 GHz 第4-1部分：传导发射测量 1 Ω/150 Ω 直接耦合法 IEC 61967-4 应用指南

This technical report serves as an application guidance and relates to IEC 61967-4.The division of IC types into →IC function modules and the software modules for →cores with CPU can be used for Parts 3, 5 and 6 of IEC 61967 as well. This report gives advice for performing test methods described in IEC 61967-4 by classifying types of integrated circuits (ICs) and providing hints for test applications related to the IC type classification. To obtain comparable results of IC emission measurements using IEC 61967-4, definitions are given which are in addition to the general conditions specified in IEC 61967-1 and IEC 61967-4. These definitions concern IC related operating modes, pins and →ports to be tested, test set-ups according IEC 61967-4, including description of load circuits and RF path, and IC related emission limits (or limit classes). Parts of the guidance provided by this technical report may be applicable to other parts of IEC 61967.

Integrated circuits - Measurement of electromagnetic emissions, 150 kHz to 1 GHz - Part 4-1: Measurement of conducted emissions - 1 Ω/150 Ω direct coupling method - Application guidance to IEC 61967-4

GSO IEC/TS 62215-2:2015 集成电路 脉冲抗扰度的测量 第2部分：同步瞬态注入法

IEC/TS 62215-2, which is a technical specification, contains general information and definitions on the test method to evaluate the immunity of integrated circuits (ICs) against fast conducted synchronous transient disturbances. This information is followed by a description of measurement conditions, test equipment and test set-up as well as the test procedures and the requirements on the content of the test report. The objective of this technical specification is to describe general conditions to obtain a quantitative measure of immunity of ICs establishing a uniform testing environment. Critical parameters that are expected to influence the test results are described. Deviations from this specification should be explicitly noted in the individual test report. This synchronous transient immunity measurement method, as described in this specification, uses short impulses with fast rise times of different amplitude, duration and polarity in a conductive mode to the IC. In this method, the applied impulse should be synchronized with the activity of the IC to make sure that controlled and reproducible conditions can be assured.

Integrated circuits - Measurement of impulse immunity - Part 2: Synchronous transient injection method

GSO IEC 62132-1:2015 集成电路 电磁抗扰度测量 150 kHz 至 1 GHz 第1部分：一般条件和定义

This part of IEC 62132 provides general information and definitions on measurement of conducted and radiated electromagnetic immunity of integrated circuits (ICs) to conducted and radiated disturbances. It also provides a description of measurement conditions, test equipment and set-up, as well as the test procedures and content of the test reports. A test method comparison table is included in Annex A to assist in selecting the appropriate measurement method(s). This standard describes general conditions required to obtain a quantitative measure of immunity of ICs in a uniform testing environment. Critical parameters that are expected to influence the test results are described. Deviations from this standard are noted explicitly in the individual test report. The measurement results can be used for comparison or other purposes. Measurement of the injected voltages and currents, together with the responses of the ICs tested at controlled conditions, yields information about the potential immunity of the IC to conducted and radiated RF disturbances in a given application.

Integrated circuits - Measurement of electromagnetic immunity, 150 kHz to 1 GHz - Part 1: General conditions and definitions

GSO IEC 62132-4:2015 集成电路 150 kHz 至 1 GHz 电磁抗扰度测量 第4部分：直接射频功率注入法

This part of IEC 62132 describes a method to measure the immunity of integrated circuits (IC) in the presence of conducted RF disturbances, e.g. resulting from radiated RF disturbances. This method guarantees a high degree of repeatability and correlation of immunity measurements. This standard establishes a common base for the evaluation of semiconductor devices used in equipment functioning in an environment subject to unwanted radio frequency electromagnetic waves.

Integrated circuits - Measurement of electromagnetic immunity 150 kHz to 1 GHz - Part 4: Direct RF power injection method

GSO IEC 62132-5:2015 集成电路 电磁免疫测量 150 kHz 至 1 GHz 第5部分：法拉第笼工作台方法

This measurement procedure describes a measurement method to quantify the RF immunity of integrated circuits (ICs) mounted on a standardized test board or on their final application board (PCB), to electromagnetic conductive disturbances.

Integrated circuits - Measurement of electromagnetic immunity, 150 kHz to 1 GHz - Part 5: Workbench Faraday cage method

GSO IEC 60748-23-1:2015 半导体器件 集成电路 第23-1部分：混合集成电路和芯片结构 生产线认证 通用规范

This set of specifications applies to high quality hybrid integrated circuits (with films) incorporating special customer quality and reliability requirements. Hybrid integrated circuits may be fully or partly completed. Partly completed devices are those that may be supplied to customers for further processing

Semiconductor devices - Integrated circuits - Part 23-1: Hybrid integrated circuits and film structures - Manufacturing line certification - Generic specification

IEC TR 61967-1-1:2015 集成电路.电磁发射的测量.第1-1部分:一般条件和定义.近场扫描数据交换格式

This part of IEC 61967 provides guidance for exchanging data generated by near-field scan measurements. The described exchange format could also be used for near-field scan data generated by simulation or computation software. It should be noted that@ although it has been developed for near-field scan@ its use is not restricted to this application. The exchange format can be applied to emission and immunity near-field scan data in the frequency and time domains. The scope of this technical report includes neither the methods used for the measurements or simulations@ nor the software and algorithms used for generating the exchange file or for processing or viewing the data contained therein.

Integrated circuits - Measurement of electromagnetic emissions - Part 1-1: General conditions and definitions - Near-field scan data exchange format

DIN IEC/TS 61967-3:2015 集成电路. 电磁辐射的测量. 第3部分: 辐射发射的测量. 表面扫描法(IEC/TS 61967-3-2014)

Integrated circuits - Measurement of electromagnetic emissions - Part 3: Measurement of radiated emissions - Surface scan method (IEC/TS 61967-3:2014)

DIN IEC/TS 62132-9:2015 集成电路.电磁抗干扰测量.第9部分:辐射抗扰度测量.表面扫描法 (IEC/TS 62132-9-2014)

Integrated circuits - Measurement of electromagnetic immunity - Part 9: Measurement of radiated immunity - Surface scan method (IEC/TS 62132-9:2014)

ASTM E1855-15 作为中子光谱传感器和位移破坏性监测器的2N2222A硅双极晶体管使用的标准试验方法

5.1 The neutron test spectrum must be known in order to use a measured device response to predict the device performance in an operational environment (E1854). Typically, neutron spectra are determined by use of a set of sensors with response functions sensitive over the neutron energy region to which the device under test (DUT) responds (E721). For silicon bipolar devices exposed in reactor neutron spectra, this effective energy range is between 0.01 and 10 MeV. A typical set of activation reactions that lack fission reactions from nuclides such as 8201;235U, 8201;237Np, or 8201;239Pu, will have very poor sensitivity to the spectrum between 0.01 and 2 MeV. For a pool-type reactor spectrum, 70 % of the DUT electronic damage response may lie in this range. 5.2 When dosimeters with a significant response in the 10 keV to 2 MeV energy region, such as fission foils, are unavailable, silicon transistors may provide a dosimeter with the needed response to define the spectrum in this critical energy range. When fission foils are part of the sensor set, the silicon sensor provides confirmation of the spectral shape in this energy region. 5.3 Silicon bipolar transistors, such as type 2N2222A, are inexpensive, smaller than fission foils contained in a boron ball, and sensitive to a part of the neutron spectrum important to the damage of modern silicon electronics. They also can be used directly in arrays to map 1 Mev(Si) equivalent displacement damage fluence. The proper set of steps to take in reading the transistor-gain degradation is described in this test method. 5.4 The energy-dependence of the displacement damage function for silicon is found in E722. The major portion of the response for the silicon transistors will generally be above 100 keV. 1.1 This test method covers the use of 2N2222A silicon bipolar transistors as dosimetry sensors in the determination of neutron energy spectra and as 1 Mev(Si) equivalent displacement damage fluence monitors. 1.2 The neutron displacement in silicon can serve as a neutron spectrum sensor in the range 0.1 to 2.0 MeV when fission foils are not available. It has been applied in the fluence range between 2 × 1012 n/cm 2 to 1 × 1014 n/cm2 and should be useful up to 1 × 1015 n/cm2. This test method details the acquisition and use of 1 Mev(Si) equivalent fluence information for the partial determination of the neutron spectra by using 2N2222A transistors. 1.3 This sensor yields a direct measurement of the silicon 1 Mev equivalent fluence by the transfer technique. 1.4 The values stated in SI units are to be regarded as standard. No other units of measurement are included in this standard. 1.5 This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate sa......

Standard Test Method for Use of 2N2222A Silicon Bipolar Transistors as Neutron Spectrum Sensors and Displacement Damage Monitors

GSO IEC 61739:2014 集成电路 第 (1) 部分：生产线审批和质量管理程序

This International Standard establishes the general requirements for delivery of qualified products through manufacturing line approval under the IECQ system and for registration in the Qualified Manufacturer List (QML). In this standard, the term QML is also used to designate the procedure associated with manufacturing line approval. This standard also describes procedures and requirements for the approval, qualification and registration of a manufacturing line, for maintenance of the QML, for audits and for the automatic qualification of products from the approved manufacturing line. After listing a manufacturing line on a QML, the manufacturer will continually meet or improve the established baseline of certified and qualified procedures, the TQM plan, the Technology Review Board (TRB), the status reporting and quality and reliability assurance requirements for all QML products. The standard is applicable for ISO 9000 certified manufacturers of semiconductor devices from member countries of IECQ.

Integrated circuits - Part 1: Procedures for manufacturing line approval and quality management

GSO IEC/TS 62433-1:2014 电磁兼容性 (EMC) 集成电路 (IC) 建模 第1部分：通用建模框架

This part of the IEC 62433 series provides specifications for model-categories of EMC IC modelling, definitions of terms that are commonly used in IEC 62433 series, modelling approaches that can be used, and requirements for each modelling that is standardized in this series.

EMC IC modelling - Part 1: General modelling framework

GSO IEC 60748-23-5:2014 半导体工具 集成电路 第23-5部分：混合集成电路和薄结构 生产线认证 能力认证程序

This part of IEC 60748-23 applies to high quality hybrids (with films) incorporating special customer quality and reliability requirements whose quality is assessed on the basis of Qualification Approval. NOTE 1 Hybrid integrated circuits may be fully or part completed. Part completed devices are those that may be supplied to customers for further processing. NOTE 2 Test methods are selected from IEC 60748-23-1. A blank detail specification (BDS) is included to assist manufacturers and users in the preparation of detail specifications.

Semiconductor devices - Integrated circuits, Part 23-5: Hybrid integrated circuits and film structures - Manufacturing line certification - Procedure for qualification approval

GSO IEC 60748-11-1:2014 半导体工具 集成电路 第11-1部分：半导体集成电路的内部目视检查 不包括混合电路

The purpose of these tests is to check the internal materials, construction and workmanship of integrated circuits for compliance with the requirements of the applicable specification. These tests will normally be used prior to capping or encapsulation on a 100 % inspection basis to detect and eliminate devices with internal defects that could lead to device failure in normal application. They may also be employed on a sampling basis prior to capping to determine the effectiveness of the manufacturer's quality control and handling procedures for semiconductor devices.

Semiconductor devices - Integrated circuits - Part 11-1: Internal visual examination for semiconductor integrated circuits excluding hybrid circuits

GSO IEC 60748-2-8:2014 半导体工具 集成电路 第2部分：数字集成电路 第8节：静态读/写集成电路准备的详细规范

  Scope is not provided for this standard

Semiconductor devices - Integrated circuits - Part 2: Digital integrated circuits - Section 8t: Blank detail specification for integrated circuit static read/write memories

GSO IEC 60748-2-10:2014 半导体工具 集成电路 第2部分：数字集成电路 第10节：动态读/写集成电路存储器准备的详细规范

  Scope is not provided for this standard

Semiconductor devices - Integrated circuits - Part 2: Digital integrated circuits - Section 10: Blank detail specification for integrated circuit dynamic read/write memories

GSO IEC 60748-20:2014 半导体工具 集成电路 第20部分：薄膜集成电路和薄膜混合集成电路通用规范

This generic specification is applicable to film integrated circuits and to hybrid film integrated circuits (F and HFICs), both passive and active, as in IEC Publication 748-1, Chapter IV, Sub-clause 2.4. It applies also to partly-completed F and HFICs supplied to customers for subsequent processing. This specification also applies to chip carrier circuits having more than one chip, provided that they, as separate products, have been interconnected by film interconnection techniques. This specification is not intended to cover printed circuit boards but is applicable to F and HFICs which may include them.

Semiconductor devices. Integrated circuits. Part 20: Generic specification for film integrated circuits and hybrid film integrated circuits

GSO IEC 60748-2-3:2014 半导体工具 集成电路 第 (2) 部分：数字集成电路 第 (3) 部分：正在准备 HCMOS 数字集成电路、54/74 HC、54/74 HCT、54/74 HCU 系列的详细规范

  Scope is not provided for this standard

Semiconductor devices - Integrated circuits - Part 2: Digital integrated circuits - Section three: Blank detail specification for HCMOS digital integrated circuits (series 54/74 HC, 54/74 HCT, 54/74 HCU)

GSO IEC 61967-8:2014 集成电路 电磁发射的测量 第8部分：辐射发射的测量 IC 带状线法

The measurement procedure of this part of IEC 61967 defines a method for measuring the electromagnetic radiated emission from an integrated circuit (IC) using an IC stripline in the frequency range of 150 kHz up to 3 GHz. The IC being evaluated is mounted on an EMC test board (PCB) between the active conductor and the ground plane of the IC stripline arrangement.

Integrated circuits - Measurement of electromagnetic emissions - Part 8: Measurement of radiated emissions - IC stripline method

GSO IEC 60748-11:2014 半导体工具 集成电路 第11部分：半导体集成电路的行业规范 不包括混合电路

This sectional specification applies to encapsulated semiconductor integrated circuits, including multichip integrated circuits, but excluding hybrid circuits.

Semiconductor devices - Integrated circuits - Part 11: Sectional specification for semiconductor integrated circuits excluding hybrid circuits