L40 半导体分立器件综合 标准查询与下载

BS EN 60191-6-20:2010 半导体器件的机械标准化.表面安装半导体器件封装外形图绘制的一般规则.小外形J-引线封装(SOJ)的封装尺寸规格测量方法

Mechanical standardization of semiconductor devices. General rules for the preparation of outline drawings of surface mounted semiconductor device packages. Measuring methods for package dimensions of small outline J-lead packages (SOJ)

BS EN 60191-6-21:2010 半导体器件的机械标准化.表面安装半导体器件封装外形图绘制的一般规则.小外形封装(SOP)尺寸的测量方法

Mechanical standardization of semiconductor devices. General rules for the preparation of outline drawings of surface mounted semiconductor device packages. Measuring methods for package dimensions of small outline packages (SOP)

BS EN 62374-1:2010 半导体装置.依赖时间的金属层间的介质击穿(TDDB)试验

This part of IEC 62374 describes a test method, test structure and lifetime estimation method of the time-dependent dielectric breakdown (TDDB) test for inter-metal layers applied in semiconductor devices.

Semiconductor devices. Time-dependent dielectric breakdown (TDDB) test for inter-metal layers

DIN EN 62417:2010 半导体器件.金属氧化物半导体场效应晶体管(MOSFETs)的移动离子试验(IEC 62417-2010);德文版本EN 62417-2010

Semiconductor devices - Mobile ion tests for metal-oxide semiconductor field effect transistors (MOSFETs) (IEC 62417:2010); German version EN 62417:2010

IEC 60747-15:2010 半导体器件.分立器件.第15部分:单独的电力半导体器件

This part of IEC 60747 gives the requirements for isolated power semiconductor devices excluding devices with incorporated control circuits. These requirements are additional to those given in other parts of IEC 60747 for the corresponding non-isolated power devices.

Semiconductor devices - Discrete devices - Part 15: Isolated power semiconductor devices

DIN EN 62415:2010 半导体器件.恒定电流电迁移试验(IEC 62415-2010);德文版本EN 62415-2010

Semiconductor devices - Constant current electromigration test (IEC 62415:2010); German version EN 62415:2010

DIN EN 62418:2010 半导体器件.金属化应力空隙试验(IEC 62418-2010);德文版本EN 62418-2010

Semiconductor devices - Metallization stress void test (IEC 62418:2010); German version EN 62418:2010

DIN EN 62416:2010 半导体器件.MOS晶体管的热载流子试验(IEC 62416-2010);德文版本EN 62416-2010

Semiconductor devices - Hot carrier test on MOS transistors (IEC 62416:2010); German version EN 62416:2010

BS EN 62258-1:2010 半导体压模产品.采购和使用

This part of IEC 62258 has been developed to facilitate the production, supply and use of semiconductor die products, including ? wafers, ? singulated bare die, ? die and wafers with attached connection structures, ? minimally or partially encapsulated die and wafers. The standard defines the minimum requirements for the data that are needed to describe such die products and is intended as an aid to the design of and procurement for assemblies incorporating die products. It covers the requirements for data, including ? product identity ? product data ? die mechanical information ? test, quality, assembly and reliability information ? handling, shipping and storage information It covers the specific requirements for the data that are needed to describe the geometrical properties of die, their physical properties and the means of connection necessary for their use in the development and manufacture of products. It also contains, in the annexes, a vocabulary and list of common acronyms.

Semiconductor die products. Procurement and use

NF C80-203*NF EN 62417:2010 半导体器件.金属氧化物半导体场效应管(MOSFETs)移动离子试验

Semiconductor devices - Mobile ion tests for metal-oxide semiconductor field effect transistors (MOSFETs).

IEC 60749-19:2010 半导体器件.机械和气候试验方法.第19部分:模剪切强度

This part of IEC 60749 determines (see note) the integrity of materials and procedures used to attach semiconductor die to package headers or other substrates (for the purpose of this test method, the term “semiconductor die” should be taken to include passive elements). This test method is generally only applicable to cavity packages or as a process monitor. It is not applicable for die areas greater than 10 mm2. It is also not applicable to flip chip technology or to flexible substrates. NOTE 1 This determination is based on a measure of the force applied to the die or to the element, and, if a failure occurs, the type of failure resulting from the application of force and the visual appearance of the residual die attach medium and the header/substrate metallization. NOTE 2 In cavity packages, die shear strength is measured in order to assure the strength of the die attachment within the cavity. In non-cavity packages, such as plastic encapsulated packages, die bonding is used to prevent die movement until the resin mould is completely cured. Normally, specification of the die shear strength and the minimum adhesion area of die bond after moulding are unnecessary, except in the following circumstances: – when the die needs to be electrically connected to die pad; – when heat from the die needs to be diffused through the die bond.

Semiconductor devices - Mechanical and climatic test methods - Part 19: Die shear strength test

NF C80-201*NF EN 62415:2010 半导体器件.恒定电流电迁移试验.

Semiconductor devices - Constant current electromigration test.

IEC 60749-32:2010 半导体器件.机械和气候试验方法.第32部分:塑料密封器件的易燃性(外部感应)

This part of IEC 60749 is applicable to semiconductor devices (discrete devices and integrated circuits). The object of this test is to determine whether the device ignites due to external heating. The test uses a needle flame, simulating the effect of small flames which may result from fault conditions within equipment containing the device. NOTE This test is identical to the test method contained in 1.2 of chapter 4 of IEC 60749 (1996), apart from the addition of this clause, the addition of titles to clauses 2 and 3 and renumbering.

Semiconductor devices - Mechanical and climatic test methods - Part 32: Flammability of plastic-encapsulated devices (externally induced)

IEC 60749-15:2010 半导体器件.机械和气候试验方法.第15部分:透孔安装设备对焊接温度的抗性

This part of IEC 60749 describes a test used to determine whether encapsulated solid state devices used for through-hole mounting can withstand the effects of the temperature to which they are subjected during soldering of their leads by using wave soldering or a soldering iron. In order to establish a standard test procedure for the most reproducible methods, the solder dip method is used because of its more controllable conditions. This procedure determines whether devices are capable of withstanding the soldering temperature encountered in printed wiring board assembly operations, without degrading their electrical characteristics or internal connections. This test is destructive and may be used for qualification, lot acceptance and as a product monitor. This test is, in general, in conformity with IEC 60068-2-20 but, due to specific requirements of semiconductors, the clauses of this standard apply.

Semiconductor devices - Mechanical and climatic test methods - Part 15: Resistance to soldering temperature for through-hole mounted devices

DIN EN 60191-6-19:2010 半导体器件的机械标准化.第6-19部分:高温和最大容许弯曲的包装弯曲测量方法(IEC 60191-6-19-2010).德文版本EN 60191-6-19-2010

Mechanical standardization of semiconductor devices - Part 6-19: Measurement methods of the package warpage at elevated temperature and the maximum permissible warpage (IEC 60191-6-19:2010); German version EN 60191-6-19:2010

IEC 60749-34:2010 半导体器件.机械和环境测试方法.第34部分:电力循环

This part of IEC 60749 describes a test method used to determine the resistance of a semiconductor device to thermal and mechanical stresses due to cycling the power dissipation of the internal semiconductor die and internal connectors. This happens when lowvoltage operating biases for forward conduction (load currents) are periodically applied and removed, causing rapid changes of temperature. The power cycling test is intended to simulate typical applications in power electronics and is complementary to high temperature operating life (see IEC 60749-23). Exposure to this test may not induce the same failure mechanisms as exposure to air-to-air temperature cycling, or to rapid change of temperature using the two-fluid-baths method. This test causes wear-out and is considered destructive. NOTE It is not the intention of this specification to provide prediction models for lifetime evaluation.

Semiconductor devices - Mechanical and climatic test methods - Part 34: Power cycling

IEC 62374-1:2010 半导体器件.第1部分:金属层之间的时间相关的介质击穿(TDDB)试验

This part of IEC 62374 describes a test method, test structure and lifetime estimation method of the time-dependent dielectric breakdown (TDDB) test for inter-metal layers applied in semiconductor devices.

Semiconductor devices - Part 1: Time-dependent dielectric breakdown (TDDB) test for inter-metal layers

BS EN 62418:2010 半导体器件.金属化应力空隙试验

This International Standard describes a method of metallization stress void test and associated criteria. It is applicable to aluminium (Al) or copper (Cu) metallization. This standard is applicable for reliability investigation and qualification of semiconductor process.

Semiconductor devices. Metallization stress void test

IEC 60747-1:2010 半导体器件.第1部分:一般

This part of IEC 60747 gives the general requirements applicable to the discrete semiconductor devices and integrated circuits covered by the other parts of IEC 60747 and IEC 60748 (see Annex A).

Semiconductor devices – Part 1: General (Edition 2.1 Consolidated Reprint)

IEC 60191-6-20:2010 半导体器件的机械标准化.第6-20部分:表面安装半导体器件封装外形图绘制准备的一般规则.小外形J-铅封装(SOJ)的包装尺寸规格用测量方法

This part of IEC 60191 specifies methods to measure package dimensions of small outline Jlead- packages (SOJ), package outline form E in accordance with IEC 60191-4.

Mechanical standardization of semiconductor devices - Part 6-20: General rules for the preparation of outline drawings of surface mounted semiconductor device packages - Measuring methods for package dimensions of small outline J-lead packages (SOJ)