L40 半导体分立器件综合 标准查询与下载

JEITA EDR-4704A-2007 半导体器件用加速寿命试验的应用指南

Recent progresses in science and technology have brought electronic devices closer to our daily life. With respect to the lifecycles of the electronic products, some are expected to have longer life in the important applications, whereas others are used for shorter periods of life. It is remarkable how semiconductor?application marketplaces have expanded and diversified these days. For example, there are handheld terminals which are prone to be replaced frequently, such as cellphones. On the other hand, there are electronic devices which are required long-life durability in the harsh conditions, such as electronic components for automotives. Most of these electronic products comprise a large number of semiconductor devices without exception. Consisting of many materials (silicon, oxide layers, metal trace materials, dielectrics, etc.) as well as more than one billion transistors and even larger number of contacts, the semiconductor devices including packages that accommodate dice have grown into enormously large-scale systems. The evolution of the semiconductor technology includes the improvement of traces and dielectric layers such as very thin gate dielectric, high-k materials, and Cu/low-k materials, as well as high density packaging technologies including SiP and build-up substrates. Significant progress has been made toward finer patterns, higher integration, higher speed, and less power consumption. The reliability requirements for such complex larger-scale systems are the same as those for the conventional devices or even stringent. In comparison with the mechanical components, the semiconductor devices generally indicate higher reliability. Still the appropriate reliability assurance plans are required in accordance with the applications and purposes of the devices. On the other hand, the bases of the reliability criteria are not always technically tangible, even though its stress duration or number of stress cycles has already been specified in the qualification program. One of the examples is the stress duration of 1000 hours at the high temperature operation life test or the temperature humidity bias test. The acceleration test is intended to predict and verify the reliability level. For that purpose, the appropriate acceleration is estimated from the target failure mechanism. Then the relevant test time or stress cycles are determined based on the acceleration factor between the test conditions and the use conditions. As a result of this consideration, the test time or test cycles are in some cases reduced significantly, quite unlike common sense. The failure mechanisms in the accelerated stress test can be classified into either intrinsic mode or extrinsic mode.

Application guide of the accelerated life test for semiconductor devices

IEC 62374:2007 半导体器件.栅极介电薄膜用时间相关的电介质击穿(TDDB)试验

This International Standard provides a test method of Time Dependent Dielectric Breakdown (TDDB) for gate dielectric films on semiconductor devices and a product lifetime estimation method of TDDB failure.

Semiconductor devices - Time dependent dielectric breakdown (TDDB) test for gate dielectric films

DLA SMD-5962-97632 REV A-2007 微型电路,数字型,改进低功率肖特基晶体管晶体管逻辑电路,双路4线到1线数据选择器/多用复选择器,单块硅

This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V).

MICROCIRCUIT, DIGITAL, ADVANCED LOW POWER SCHOTTKY TTL, DUAL 4-LINE TO 1-LINE DATA SELECTORS/MULTIPLEXERS, MONOLITHIC SILICON

DLA SMD-5962-97593 REV B-2007 微型电路,数字型,双极,改进型肖特基晶体管晶体管逻辑电路,六路反向器,单块硅

This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN.

MICROCIRCUIT, DIGITAL, BIPOLAR, ADVANCED SCHOTTKY TTL, HEX INVERTERS, MONOLITHIC SILICON

DLA SMD-5962-97592 REV A-2007 微型电路,数字型,双极,带清零信号和预置信号的改进型肖特基晶体管晶体管逻辑电路,双路正边沿触发D型触发器,单块硅

This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M)and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN.

MICROCIRCUIT, DIGITAL, BIPOLAR, ADVANCED SCHOTTKY TTL, DUAL POSITIVE-EDGE-TRIGGERED D-TYPE FLIP-FLOPS W/CLEAR AND PRESET, MONOLITHIC SILICON

DLA SMD-5962-96852 REV B-2007 单通道功率耦联晶体管接口混合线型微电路

This drawing documents five product assurance classes as defined in paragraph 1.2.3 and MIL-PRF-38534.

MICROCIRCUIT, HYBRID, LINEAR, SINGLE CHANNEL, OPTICALLY COUPLED POWER TRANSISTOR INTERFACE

NAVY MIL-DTL-19803 G-2007 GCU-24A/A型10升液态氧变流器

This specification covers one type of aircraft converter, GCU-24A/A, used for storing and pressuring 10 liters of liquid oxygen.

CONVERTER, LIQUID OXYGEN, 10-LITER, GCU-24A/A

DIN EN 62258-6:2007 半导体压模产品.第6部分:关于热压摸信息要求

This part of DIN EN 62258 determines the information required to facilitate the use of thermal data and models for simulation of the thermal behaviour and verification of the correct functionality of electronic systems that include bare semiconductor die, with or without connection structures, and/or minimally packaged semiconductor die.

Semiconductor die products - Part 6: Requirements for information concerning thermal simulation (IEC 62258-6:2006); German version EN 62258-6:2006

DIN EN 62258-5:2007 半导体压模产品.第5部分:关于电子模拟信息要求

This part of DIN EN 62258 specifies the information required to facilitate the use of electrical data and models for simulation of the electrical behaviour and verification of the correct functionality of electronic systems that include bare semiconductor die, with or without connection structures, and/or minimally packaged semiconductor die.

Semiconductor die products - Part 5: Requirements for information concerning electrical simulation (IEC 62258-5:2006); German version EN 62258-5:2006

DLA SMD-5962-95761 REV A-2007 高速抗辐射互补金属氧化物半导体,非倒相三状态输出缓冲器或时钟驱动器,晶体管兼容输入和有线输出电压摆动硅单片电路线型微电路

This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN).

MICROCIRCUIT, DIGITAL, FAST CMOS, BUFFER/CLOCK DRIVER WITH NONINVERTING THREE-STATE OUTPUTS, TTL COMPATIBLE INPUTS AND LIMITED OUTPUT VOLTAGE SWING, MONOLITHIC SILICON

DLA SMD-5962-91610 REV B-2007 硅单块 晶体管-晶体管逻辑电路兼容输入,带三态输出的九比特D缓冲器,正极边缘触发器,高速互补金属氧化物半导体,数字微型电路

This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels is reflected in the PIN.

MICROCIRCUIT, DIGITAL, ADVANCED CMOS, 9-BIT D FLIP-FLOP, POSITIVE EDGE TRIGGERED, WITH THREE-STATE OUTPUTS, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON

DLA SMD-5962-91609 REV B-2007 硅单块 晶体管-晶体管逻辑电路兼容输入,三态输出,带同步重设置的八比特诊断式自动记录器,高速互补金属氧化物半导体,数字微型电路

This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V).

MICROCIRCUIT, DIGITAL, ADVANCED CMOS, 8-BIT DIAGNOSTIC REGISTER WITH THREESTATE OUTPUTS, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON

DLA SMD-5962-96597 REV B-2007 抗辐射互补金属氧化物半导体,双重4输入与门晶体管兼容输入硅单片电路数字微电路

This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN.

MICROCIRCUIT, DIGITAL, RADIATION HARDENED, ADVANCED CMOS, DUAL 4-INPUT NOR GATE, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON

DLA SMD-5962-86831 REV B-2007 硅单块 带晶体管-晶体管逻辑电路兼容输入方形2输入非与门,高速互补金属氧化物半导体,数字微型电路

This drawing describes device requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A.

MICROCIRCUIT, DIGITAL, HIGH-SPEED CMOS, QUAD 2-INPUT NAND GATE WITH TTL COMPATIBLE INPUTS, MONOLITHIC SILICON

DLA SMD-5962-92018 REV A-2007 硅单块 晶体管-晶体管逻辑电路兼容输入,带三态输出的16比特总线驱动器,高级互补金属氧化物半导体,数字微型电路

This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN.

MICROCIRCUIT, DIGITAL, ADVANCED CMOS, 16-BIT BUS DRIVERS WITH THREE-STATE OUTPUTS, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON

DLA SMD-5962-97590 REV A-2007 微型电路,数字型,改进型肖特基晶体管晶体管逻辑电路,带三态输出的八路边沿触发D型触发器,单块硅

This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V).

MICROCIRCUIT, DIGITAL, ADVANCED SCHOTTKY TTL, OCTAL EDGE TRIGGERED D-TYPE FLIP FLOPS WITH THREE STATE OUTPUTS, MONOLITHIC SILICON

DLA SMD-5962-97591 REV A-2007 微型电路,数字型,双极,改进型肖特基晶体管晶体管逻辑电路,8 位等值比较器,单块硅

This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M)and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN.

MICROCIRCUIT, DIGITAL, BIPOLAR, ADVANCED SCHOTTKY TTL, 8-BIT IDENTITY COMPARATORS, MONOLITHIC SILICON

DLA SMD-5962-97589 REV A-2007 微型电路,数字型,双极,改进型肖特基晶体管晶体管逻辑电路,带三态输出的八路透明D型锁存器,单块硅

This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M)and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN.

MICROCIRCUIT, DIGITAL, BIPOLAR, ADVANCED SCHOTTKY TTL, OCTAL TRANSPARENT D-TYPE LATCHES WITH 3-STATE OUTPUTS, MONOLITHIC SILICON

DLA SMD-5962-97588 REV A-2007 微型电路,数字型,双极,改进型肖特基晶体管晶体管逻辑电路,四路2输入正或门,单块硅

This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN.

MICROCIRCUIT, DIGITAL, BIPOLAR, ADVANCED SCHOTTKY, TTL, QUADRUPLE 2-INPUT POSITIVE-OR GATES, MONOLITHIC SILICON

DLA SMD-5962-97586 REV A-2007 微型电路,数字型,双极,改进型肖特基晶体管晶体管逻辑电路,八路缓冲器W/低启动带三态非反向输出,单块硅

This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M)and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN.

MICROCIRCUIT, DIGITAL, BIPOLAR, ADVANCED SCHOTTKY TTL, OCTAL BUFFERS W/ACTIVE LOW ENABLED 3-STATE NON-INVERTED OUTPUTS, MONOLITHIC SILICON