L40 半导体分立器件综合 标准查询与下载

IEC 62830-3:2017 半导体器件. 收集和产生能量的半导体器件. 第3部分: 基于振动的电磁能量收集

This part of IEC 62830 describes terms, definitions, symbols, configurations, and test methods that can be used to evaluate and determine the performance characteristics of vibration based electromagnetic energy harvesting devices. This part of IEC 62830 specifies the methods of tests and the characteristic parameters of the vibration based electromagnetic energy harvesting devices for evaluating their performances accurately and practical use. This part of IEC 62830 is applicable to energy harvesting devices for consumer, general industries, military and aerospace applications without any limitations of device technology, shape and size.

Semiconductor devices - Semiconductor devices for energy harvesting and generation - Part 3: Vibration based electromagnetic energy harvesting

IEC 60749-9:2017 半导体器件.机械和气候试验方法.第9部分:标记的永久性

The purpose of this part of IEC 60749 is to determine whether the marks on solid state semiconductor devices will remain legible when subjected to the application and removal of labels or the use of solvents and cleaning solutions commonly used during the removal of solder flux residue from the printed circuit board manufacturing process. This test is applicable to all package types. It is suitable for use in qualification and/or process monitor testing. The test is considered non-destructive. Electrical or mechanical rejects can be used for the purpose of this test. NOTE 1 This procedure does not apply to laser branded packages. Many available solvents that could be used are either not sufficiently active, too stringent, or even dangerous to humans when in direct contact or when fumes are inhaled. NOTE 2 The composition of solvents used in this document is considered typical and representative of the desired stringency as far as the usual coatings and markings are concerned.

Semiconductor devices - Mechanical and climatic test methods - Part 9: Permanence of marking

DIN EN 62779-3:2017 半导体器件.人体沟通的半导体界面.第3部分:功能类型及其操作条件(IEC 62779-3-2016);德文版本EN 62779-3-2016

Semiconductor devices - Semiconductor interface for human body communication - Part 3: Functional type and its operational conditions (IEC 62779-3:2016); German version EN 62779-3:2016

IEC 62830-1:2017 半导体器件 用于能量采集和发电的半导体器件 第1部分：基于振动的压电能量采集

This part of IEC 62830 defines terms, definitions, symbols, configurations, and test methods that can be used to evaluate and determine the performance characteristics of vibration based piezoelectric energy harvesting devices for practical use. This document is applicable to energy harvesting devices for consumer, general industries, military and aerospace applications without any limitations on device technology and size.

Semiconductor devices - Semiconductor devices for energy harvesting and generation - Part 1: Vibration based piezoelectric energy harvesting

IEC 60749-28:2017 半导体器件. 机械和气候试验方法. 第28部分: 静电放电(ESD)灵敏度试验. 带电器件模型(CDM). 器件级

This part of IEC 60749 establishes the procedure for testing, evaluating, and classifying devices and microcircuits according to their susceptibility (sensitivity) to damage or degradation by exposure to a defined field-induced charged device model (CDM) electrostatic discharge (ESD). All packaged semiconductor devices, thin film circuits, surface acoustic wave (SAW) devices, opto-electronic devices, hybrid integrated circuits (HICs), and multi-chip modules (MCMs) containing any of these devices are to be evaluated according to this document. To perform the tests, the devices are assembled into a package similar to that expected in the final application. This CDM document does not apply to socketed discharge model testers. This document describes the field-induced (FI) method. An alternative, the direct contact (DC) method, is described in Annex I. The purpose of this document is to establish a test method that will replicate CDM failures and provide reliable, repeatable CDM ESD test results from tester to tester, regardless of device type. Repeatable data will allow accurate classifications and comparisons of CDM ESD sensitivity levels.

Semiconductor devices - Mechanical and climatic test methods - Part 28: Electrostatic discharge (ESD) sensitivity testing - Charged device model (CDM) - device level

IEC 60749-4:2017 半导体器件.机械和气候试验方法.第4部分:湿热,稳态,高加速应力试验

This part of IEC 60749 provides a highly accelerated temperature and humidity stress test (HAST) for the purpose of evaluating the reliability of non-hermetic packaged semiconductor devices in humid environments.

Semiconductor devices - Mechanical and climatic test methods - Part 4: Damp heat, steady state, highly accelerated stress test (HAST)

IEC 62047-28:2017 半导体器件. 微型机电装置. 第28部分: 振动驱动MEMS驻极体能量采集设备的性能试验方法

This part of IEC 62047 specifies terms and definitions, and a performance testing method of vibration driven MEMS electret energy harvesting devices to determine the characteristic parameters for consumer, industry or any application. This document applies to vibration driven electret energy harvesting devices whose electrodes with a gap below 1000 m are covered by dielectric material with trapped charges and are fabricated by MEMS processes such as etching, photolithography or deposition.

Semiconductor devices - Micro-electromechanical devices - Part 28: Performance testing method of vibration-driven MEMS electret energy harvesting devices

DIN EN 62779-1:2017 半导体器件.人体沟通的半导体界面.第1部分:通用要求(IEC 62779-1-2016);德文版本EN 62779-1-2016

Semiconductor devices - Semiconductor interface for human body communication - Part 1: General requirements (IEC 62779-1:2016); German version EN 62779-1:2016

IEC 62047-27:2017 半导体器件. 微型机电装置. 第27部分: 采用微锯齿试验(MCT)的玻璃熔块胶接结构粘结强度试验

This part of IEC 62047 specifies a method for assessing the bond strength of glass frit bonded structures using micro-chevron-tests (MCT). It describes suitable sample geometry and provides guidance for the design of deviating sample geometries. The micro-chevron-test is an experimental method to determine the fracture toughness KIC of brittle materials or bond interfaces using specifically designed test chips (micro-chevronsamples) under defined load conditions (crack opening mode I). Owing to its high precision and low variance@ it is suitable for analysing the influence of different process parameters on bond strength as well as for quality assurance. The exemplary setup of the micro-chevron-test is given in Figure 1. These operational instructions are applicable for symmetrically glass frit bonded siliconsilicon- stacks@ i.e. the joint upper and lower chip of the chevron sample exhibit identical thickness and mechanical properties. The method is suitable for test samples@ which are either produced directly from individual chips in corresponding dimensions@ or for integrated samples@ which have been singled out from processed wafers using suitable methods. This document determines preferential dimensions for samples as well as parameters for the test conditions. Deviating geometries can potentially influence the viability of the tests as well as the comparability of the results. On that score@ all parameters are determined and documented accurately.

Semiconductor devices - Micro-electromechanical devices Part 27: Bond strength test for glass frit bonded structures using micro-chevron- tests (MCT)

IEC 62830-2:2017 半导体器件. 收集和产生能量的半导体器件. 第2部分: 基于热能的热电能量收集

This part of IEC 62830 describes procedures and definitions for measuring the thermo power of thin films used in micro-scale thermoelectric energy generators, micro heaters and micro coolers. This part of IEC 62830 specifies the methods of tests and the characteristic parameters of the thermoelectric properties of wire, bulk and thin films which have a thickness of less than 5 µm and energy harvesting devices that have thermoelectric thin films, in order to accurately evaluate their performance and practical uses. This part of IEC 62830 is applicable to energy harvesting devices for consumer, general industries, military and aerospace applications without any limitations of device technology and size.

Semiconductor devices - Semiconductor devices for energy harvesting and generation - Part 2: Thermo power based thermoelectric energy harvesting

DIN EN 62779-2:2017 半导体器件.人体沟通的半导体界面.第2部分:界面连接性能的特征描述(IEC 62779-2-2016);德文版本EN 62779-2-2016

Semiconductor devices - Semiconductor interface for human body communication - Part 2: Characterization of interfacing performances (IEC 62779-2:2016); German version EN 62779-2:2016

BS EN 60191-6-13:2016 半导体装置的机械标准化.第6-13部分:小间距球栅阵列(FBGA)和小间距盘栅阵列(FLGA)用顶部开口型插座的设计指南

Mechanical standardization of semiconductor devices. Design guideline of open-top-type sockets for Fine-pitch Ball Grid Array (FBGA) and Fine-pitch Land Grid Array (FLGA)

DIN EN 62047-1:2016 半导体装置.微型机电装置.第1部分:术语和定义(IEC 62047-1-2016).德文版本EN 62047-1-2016

Semiconductor devices - Micro-electromechanical devices - Part 1: Terms and definitions (IEC 62047-1:2016); German version EN 62047-1:2016

BS EN 60749-44:2016 半导体器件. 机械和气候试验方法. 半导体设备的中子束照射单粒子效应(SEE)试验方法

Semiconductor devices. Mechanical and climatic test methods. Neutron beam irradiated single event effect (SEE) test method for semiconductor devices

BS EN 62047-25:2016 半导体器件. 微型机电装置. 硅基MEMS制造技术. 微键合区拉压和剪切强度的测量方法

Semiconductor devices. Micro-electromechanical devices. Silicon based MEMS fabrication technology. Measurement method of pull-press and shearing strength of micro bonding area

BS EN 62779-1:2016 半导体器件. 人体沟通的半导体界面. 通用要求

Semiconductor devices. Semiconductor interface for human body communication. General requirements

BS EN 62779-3:2016 半导体器件. 人体沟通的半导体界面. 功能类型及其操作条件

Semiconductor devices. Semiconductor interface for human body communication. Functional type and its operational conditions

BS EN 62779-2:2016 半导体器件 用于人体通信的半导体接口 接口性能表征

Semiconductor devices. Semiconductor interface for human body communication. Characterization of interfacing performances

NF C96-050-26*NF EN 62047-26:2016 半导体器件. 微型机电装置. 第26部分: 微槽和针孔结构的描述和测量方法

Semiconductor devices - Micro-electromechanical devices - Part 26 : description and measurement methods for micro trench and needle structures

BS EN 62047-26:2016 半导体器件. 微型机电装置. 微槽和针孔结构的描述和测量方法

Semiconductor devices. Micro-electromechanical devices. Description and measurement methods for micro trench and needle structures