L43 半导体整流器件 标准查询与下载

JEDEC JESD14-1986 半导体功率控制模块

This JEDEC Standard is intended to supplement discrete Standards in those situations where the subassemblies or chips within the module are supplied in combinations consistent with the ‘Scope outlined in paragraph 1.0. This Standard addresses only those additional specifications required as a result of the combining of the devices.

Semiconductor Power Control Modules

NF C96-006:1984 电子元件.半导体器件.分立器件和集成电路.第6部分:闸流晶体管

Electronic components. Semiconductor devices. Discrete devices and integrated circuits. Part 6 : thyristors.

NF C96-002:1984 电子元件.半导体器件.分立元件和集成电路.第2部分:整流二极管

ELECTRONIC COMPONENTS. SEMICONDUCTOR DEVICES. DISCRETE DEVICES AND INTEGRATED CIRCUITS. PART 2 : RECTIFIER DIODES.

NF C86-811:1983 电子元器件质量评估协调体系.空白详细规范.特定外壳温度闸流晶体管

Harmonized system of quality assessment for electronic components. Blank detail specification. Case-rated thyristors.

NF C86-819:1983 电子元器件质量评估协调体系.空白详细规范.特定外壳温度整流二极管

Harmonized system of quality assessment for electronic components. Blank detail specification. Case rated rectifier diodes.

NF C86-810:1983 电子元器件质量评估协调体系.空白详细规范.特定环境温度可控硅

Harmonized system of quality assessment for electronic components. Blank detail specification : ambient-rated thyristor.

NF C86-818:1983 电子元器件质量评估协调体系.空白详细规范.特定环境温度整流二极管

Harmonized system of quality assessment for electronic components. Blank detail specification. Ambient rated rectifier diodes.

IEEE 597-1983 通用闸流晶体管直流驱动规程和要求

Practices and requirements for general purpose thyristor dc drives

IEC 60747-2:1983 半导体器件.分立器件.第2部分:整流二极管

Semiconductor devices. Discrete devices. Part 2 : Rectifier diodes

JEDEC JESD370B-1982 半导体器件的命名系统

Designation System for Semiconductor Devices

Designation System for Semiconductor Devices

SJ 1944-1981 2CL30～33、2DL30～33、2CL40～43、2DL40～43型高压硅堆

Detail specification for high voltage silicon rectifier stacks,Type 2CL30~33,2DL30~33,2CL40~43 and 2DL40~43

SJ 1948-1981 2CZ90D～90J、2DZ90D～90J、2CZ91D～91J、2DZ91D～91J、2CZ92D～92J、2DZ92D～92J型硅高频整流二极管

Detail specification for high frequency rectifier diodes,Types 2CZ90D~90J,2DZ90D~90J,2CZ91D~91J,2DZ91D~91J,2CZ92D~92J and 2DZ92D~92J

SJ 1943-1981 2CL12～20、2DL12～20型高压硅堆

Detail specification for high voltage silicon rectifier stacks,Type 2CL12~20 and 2DL12~20

SJ 1947-1981 2CZ33B、2DZ33B型硅电源整流二极管

Detail specification for silicon power rectifier diodes,Type 2CZ32B,2DZ32B,2CZ33B and 2DZ33B

SJ 1791-1981 5A以下硅单相桥式整流器.绝缘强度的测试方法

Method of measurement for insulation robustness of silicon single phase bridge rectifiers,up to 5A

SJ 1785-1981 5A以下硅单相桥式整流器.测试方法总则

General procedures of measurement for silicon single phase bridge rectifiers,up to 5A

SJ 1786-1981 5A以下硅单相桥式整流器.正向压降的测试方法

Method of measurement for forward voltage of silicon single phase bridge rectifiers,up to 5A

SJ 1787-1981 5A以下硅单相桥式整流器.额定反向工作峰值电压及反向电流的测试方法

Method of measurement for rated peak working reverse voltage and reverse current of silicon single phase bridge rectifiers,up to 5A

SJ 1789-1981 5A以下硅单相桥式整流器.最高工作频率的测试方法

Method of measurement for maximum operational frequency of silicon single phase bridge rectifiers,up to 5A

SJ 1788-1981 5A以下硅单相桥式整流器.工作结温的测试方法

Method of measurement for operational junction temperature of silicon single phase bridge rectifiers,up to 5A