L50 光电子器件综合 标准查询与下载



共找到 323 条与 光电子器件综合 相关的标准,共 22

Semiconductor optoelectronic devices.Detail specification for type GD3252Y photodiodes

ICS
31.260
CCS
L50
发布
1996-08-30
实施
1997-01-01

Semiconductor optoelectronic devices.Detail specification for types GJ9031T and GJ9032T and GJ9034T semiconductor laser diodes

ICS
31.260
CCS
L50
发布
1996-08-30
实施
1997-01-01

Semiconductor optoelectronic devices.Detail specification for type GR9413 infrared light emitting diode

ICS
31.260
CCS
L50
发布
1996-08-30
实施
1997-01-01

Scmiconductor optoelectronic devices.Detail specification for type GD3251Y photodiodes

ICS
31.260
CCS
L50
发布
1996-08-30
实施
1997-01-01

Semiconductor optoelectronic devices.Detail specification for type GD3283Y position sensitive detector

ICS
31.260
CCS
L50
发布
1996-08-30
实施
1997-01-01

Defines the major electrical, mechanical and environmental parameters for the description and performance analysis of stand-alone photovoltaic (PV) systems.

Characteristic parameters of stand-alone photovoltaic (PV) systems

ICS
27.160
CCS
L50
发布
1996-08-15
实施
1996-08-15

Detail specification for InGaAs/InP PIN photodiode for type GD 218

ICS
31.260
CCS
L50
发布
1996-06-14
实施
1996-10-01

Detail specification for types A6-02A-M2(Z2)and A6-01B-M1(Z1)metal case for semiconductor photocouplers

ICS
31.260
CCS
L50
发布
1996-06-14
实施
1996-10-01

This standard was developed to define a Chain Description File that specifies protocol required to support in-circuit programming. The need for in-circuit programming is driven by high density devices with small lead pitches and high pin count, which are difficult to handle without damage. It is also evolving into a preferred prototyping and debugging environment.

Standard for China Description File

ICS
31.260
CCS
L50
发布
1996-06-01
实施

This addendum expands the usefulness of the JEDEC Standard No. 35 (JESD35) by detailing an alternative method of determining the end point of the voltage ramp test and expanding the range for determination of the end point for the current ramp test.

Test Criteria for the Wafer-Level Testing of Thin Dielectrics Addendum No. 2 to JESD35

ICS
31.260
CCS
L50
发布
1996-02-01
实施

Recommendations for power quality, PV system equipment protection and personal safety.

Photovoltaic (PV) systems. Characteristics of the utility interface

ICS
27.160
CCS
L50
发布
1996-01-15
实施
1996-01-15

Specifies test procedures used to apply simulated electrostatic discharge (ESD) stress to packaged optoelectronic components for the purpose of measuring the degree of vulnerability of these components to statice discharge that naturally occurs in the environment.

Procedure for Applying Human Body Model Electrostatic Discharge Stress to Packaged Optoelectronic Components

ICS
31.260
CCS
L50
发布
1996
实施

1.1 These test methods provide procedures to determine the insulation resistance of a photovoltaic (PV) module, i.e. the electrical resistance between the module''s internal electrical components and its exposed, electrically conductive, non-current carrying parts and surfaces.1.2 The insulation integrity procedures are a combination of wet insulation resistance and wet dielectric voltage withstand test procedures.1.3 These procedures are similar to and reference the insulation integrity test procedures described in Test Methods E 1462, with the difference being that the photovoltaic module under test is immersed in a wetting solution during the procedures.1.4 These test methods do not establish pass or fail levels. The determination of acceptable or unacceptable results is beyond the scope of these test methods.1.5 The values stated in SI units are to be regarded as the standard.1.6 There is no similar or equivalent ISO standard.1.7 This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety and health practices and determine the applicability of regulatory limitations prior to use. For specific precautionary statements, see Section 6.

Standard Test Methods for Wet Insulation Integrity Testing of Photovoltaic Modules

ICS
27.160 (Solar energy engineering)
CCS
L50
发布
1996
实施

Establishes recommended procedures and specifications for qualification tests that are structured to evaluate terrestrial flat-plate photovoltaic nonconcentrating modules intended for power generation applications.

Recommended practice for qualification of photovoltaic (PV) modules

ICS
27.160
CCS
L50
发布
1995-12-12
实施
1996-04-12

The JESD35 describes voltage and current ramp tests for characterizing the integrity of thin dielectrics in MOS microelectronics. Two parameters, the breakdown electric field and the charge density to breakdown, are typically extracted fiom the test results and used as a measure of dielectric quality. The validity and accuracy of these parameters are dependent on the layout of the thin oxide test structure, test equipment accuracy, and environmental conditions. It is therefore important to understand the various sources of error that can be introduced by the above factors.

General Guidelines for Designing Test Structures for the Wafer-Level Testing of Thin Dielectrics Addendum No. 1 to JESD35

ICS
CCS
L50
发布
1995-09-01
实施

Photovoltaic devices - Part 8: Guidance for the measurement of spectral response of a photovoltaic (PV) device

ICS
27.160
CCS
L50
发布
1995-09
实施

Photovoltaic devices - Part 7: Computation of spectral mismatch error introduced in the testing of a photovoltaic device

ICS
27.160
CCS
L50
发布
1995-09
实施

Semiconductor devices - Part 12: Optoelectronic devices - Section 1: Blank detail specification for light emitting/infrared emitting diodes with/without pigtail for fibre optic systems or sub-systems

ICS
31.260
CCS
L50
发布
1995-07
实施
2005-04-01

Semiconductor devices - Part 12: Optoelectronic devices - Section 2: Blank detail specification for laser diode modules with pigtail for fibre optic systems and sub-systems

ICS
31.260
CCS
L50
发布
1995-07
实施
2005-04-01

Photovoltaic (PV) systems - Characteristics of the utility interface

ICS
27.160
CCS
L50
发布
1995-06
实施
2004-12-20



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