韩国帕克(Park)原子力显微镜于2018年在大中华区推出“帕克AFM奖学金”计划，由Park原子力显微镜公司赞助，希望可以通过此次计划为年轻的科学家提供崭露头角的机会，并在纳米科学领域研究中注入新鲜的血液！2018年Park AFM奖学金的获得者是来自浙江大学物理系的王震博士，王博士通过使用Park NX10得到的相关研究成果写成论文“Defects controlled hole doping and multivalley transport in SnSe single crystals”发表于<<Nature Communications>> [9,47 (2018)]。
2019年，在众多使用Park AFM发出研究成果论文的申请者中，以色列理工学院博士后惠飞博士在提及Park NX-Hivac的论文"Scanning probe microscopy for advanced nanoelectronics"被<<Nature Electronics>>收录，成为2019 Park AFM奖学金获得者。
2020年7月17日，苏州大学功能纳米与软物质学院来自Mario Lanza教授团队（文超女士，惠飞博士）联合俄罗斯科学院艾菲物理技术研究所Nikolai S. Sokolov团队 (Dr. Alexander G.Banshchikov）、维也纳工业大学微电子学研究所Tibor Grasser团队 (Dr. Yury Y.Illarionov, Ms. Theresia Knobloch）, 德根多夫理工学院机械工程与机电一体化系Werner Frammelsberger教授，在Advanced Materials上发表题为 “DielectricProperties of Ultrathin CaF2 Ionic Crystals” 的研究论文，报道了分子束外延法制备的超薄氟化钙薄膜具有优异的介电性能。作为此篇文章第一作者的文超女士在刚刚结束的第二届扫描探针显微镜纳米科学中国论坛（NSS China 2020）作为邀请嘉宾也给了相关研究的口头报告。
在论文中，文超女士指出“通过导电原子力显微镜对分子束外延法生长的超薄（约2.5纳米）氟化钙薄膜的三千多个位置进行电流-电压曲线测试和电流图测试后，发现氟化钙材料显示出比工业生产的二氧化硅，二氧化钛和六方氮化硼更好的介电性能（即高均匀性，低漏电流和高介电强度）。其主要原因是氟化钙具有连续的立方晶体结构，并且其在大区域内没有形成电弱点的缺陷。而同时，氟化钙（111晶面）可以和二维材料间形成准范德华结构，可用于解决场效应管中二维管道和三维栅介质之间的接触问题。”
查看Advanced Materials发表的论文全文请
https://onlinelibrary.wiley.com/doi/abs/10.1002/adma.202002525
文超女士的个人专访即将被收录到最新一期的NanoScientific杂志中，以下为文超女士的专访原文：
Ms. Chao Wen received her B.S. (2018) in Physics from the Wuhan University of Technology and her first M.S. in Nanoscience from the Rovira i Virgili University. She obtained the International Exchange and Overseas Training Scholarship from Soochow University during her stay in Spain to study the current generation in ZnO nanowire arrays using conductive atomic force microscope (CAFM). Ms. Chao Wen is now pursuing her second M.S. in Physics at Soochow University with an expected graduation date of June 2021. During her master in Soochow University, Ms. Chao Wen received several awards, including the Excellent Master Student Award, the Principle Scholarships, and the National Scholarship. Her research focuses on the characterization of nanoelectronic behaviors across dielectrics using CAFM and two-dimensional materials-based resistive switching devices. She has published 8 research articles in top journals (including Nature Electronics, Advanced Materials, Advanced Functional Materials, etc.) and 3 conference proceedings. Ms. Chao Wen also serves as a technical reviewer for Scientific Reports and Microelectronic Engineering.
Interview Questions:
1. Please summarize the research you do and explain why it is significant?
My current research focuses on the characterization of nanoelectronic behaviors across dielectrics which are compatible with two dimensional (2D) materials using conductive atomic force microscope (CAFM).
In order to solve the problem of limited switching speed in silicon-based microelectronic devices, 2D materials, such as graphene and transition metal dichalcogenides(TMDs), have been introduced into microelectronic devices due to their high carrier mobility. However, the interface between these 2D materials and 3D traditional dielectrics (such as SiO2 and transition metal oxides) is always problematic for the reason that there are plenty of dangling bonds on the surface of solid dielectrics. The problematic interface containing abundant defective bonds will impair the performance of microelectronic devices. Therefore, finding ultra-thin dielectric materials compatible with graphene and related materials is of utmost importance.
2. How might your research be used?
In my work, I aim to find ultra-thin dielectrics which are compatible with 2D materials. To realize this goal, I analyze the microstructure and nanoscale electrical properties(uniformity, point-to-point variability and dielectric strength) of these dielectrics. The nanoscale electrical and morphological analysis obtained from my research can not only help to reveal the reason for the electrical performance of microelectronic devices but also provide substantial information for other researchers to choose the proper dielectric for their devices. For example, my paper published in Advanced Materials proves that ultra-thin CaF2 films grown by molecular beam epitaxy show ultra-low variability, high dielectric strength, and low leakage current. This means that the use of ultra-thin CaF2 films may be one possible solution to the problematic interface between 2D materials and traditional solid dielectrics. This can further solve the challenging problem for the integration of 2D materials into Si based microelectronic devices. This is what I hope to bring to the electron devices society as well.
3. Why is the Park AFM important for your research?
My research focuses on the electrical characterization of dielectrics at nanoscale, while CAFM is one of the few tools to realize this goal. When we use CAFM to measure the sample in air, one of the main problems is that a water meniscus forms at the tip/sample junction owing to the ambient humidity. This water layer can increase the effective contact area and the oxidation speed of the sample. Therefore, it is very significant for us to measure the sample under vacuum in order to obtain the intrinsic topographic and electrical information of our sample.
With Park NX-Hivac AFM, we can measure our samples under vacuum condition, as low as to 10-6 torr, which is very important for my research.
4. What features of Park AFM are the most beneficial and why?
NX-Hivac AFM from Park Systems has two main features which are very important for my experiments. The first feature is that the topography and current maps acquired by this AFM show very small drift even over 20 scans. This is very important because one of my experiments is to analyze the influence of sample bias on the area of the conductive spots in the current map. Only when the drift is very small from one map to another, can we compare the topography and current maps at a specific position. The second important feature is the logarithmic amplifier used in NX-Hivac AFM. With a linear amplifier, the currents arrive at the saturation level around several nanoamperes. However,this cannot prove the existence of dielectric breakdown in the dielectric layer, which always happens at a current level of microamperes. With alogarithmic amplifier, we can measure the current from picoamperes tomilliamperes.
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