This Technical Report describes a method for determining ion-sputtering rates for depth profiling measurements with Auger electron spectroscopy (AES) and X-ray photoelectron spectroscopy (XPS) where the specimen is ion-sputtered over a region with an area between 0,4 mm2 and 3,0 mm2. This Technical Report is applicable only to a laterally homogeneous bulk or single-layered material where the ion-sputtering rate is determined from the sputtered depth, as measured by a mechanical stylus profilometer, and sputtering time. This Technical Report provides a method to convert the ion-sputtering time scale to sputtered depth in a depth profile by assuming a constant sputtering velocity. This method has not been designed for, or tested using, a scanning probe microscope system. It is not applicable to the case where the sputtered area is less than 0,4 mm2 or where the sputter-induced surface roughness is significant compared with the sputtered depth to be measured
ISO/TR 22335-2007由国际标准化组织 IX-ISO 发布于 2007-07-01。
ISO/TR 22335-2007 在中国标准分类中归属于: A43 化学,在国际标准分类中归属于: 71.040.40 化学分析。
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