SAE J 1752/3-2011
采用集成电路TEM /宽带TEM(GTEM)单元方式的辐射排放测量;TEM单元(150 kHz至1 GHz),宽带TEM单元(150 kHz至 8 GHz)

Measurement of Radiated Emissions from Integrated Circuits TEM/Wideband TEM (GTEM) Cell Method; TEM Cell (150 kHz to 1 GHz), Wideband TEM Cell (150 kHz to 8 GHz)


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标准号
SAE J 1752/3-2011
发布日期
2011年06月17日
实施日期
废止日期
中国标准分类号
T36
国际标准分类号
33.100.10;43.040.10
发布单位
US-SAE
引用标准
IEC 61967 SAE J 1752/1-2006
被代替标准
SAE J 1752/3-2003
适用范围
This measurement procedure defines a method for measuring the electromagnetic radiation from an integrated circuit (IC). The IC being evaluated is mounted on an IC test printed circuit board (PCB) that is clamped to a mating port (referred to as a wall port) cut in the top or bottom of a TEM or wideband TEM (GTEM) cell. The test board is not in the cell as in the conventional usage but becomes a part of the cell wall. This method is applicable to any TEM or GTEM cell modified to incorporate the wall port; however, the measured RF voltage is affected by the septum to test board (wall) spacing. This procedure was developed using a 1 GHz TEM cell with a septum to wall spacing of 45 mm and a GTEM cell with average septum to wall spacing of 45 mm over the port area. Other cells may not produce identical spectral output but may be used for comparative measurements, subject to their frequency and sensitivity limitations. A conversion factor may allow comparisons between data measured on TEM or GTEM cells with different septum to wall spacing. The IC test board controls the geometry and orientation of the operating IC relative to the cell and eliminates any connecting leads within the cell (these are on the backside of the board, which is outside the cell). For the TEM cell, one of the 50 Ω ports is terminated with a 50 Ω load. The other 50 Ω port for a TEM cell, or the single 50 Ω port for a GTEM cell, is connected to the input of a spectrum analyzer or receiver that measures the RF emissions emanating from the IC and coupled onto the septum of the TEM cell.

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