共找到 434 条与 半导体材料 相关的标准,共 29 页
Monocrystalline germanium and monocrystalline germanium slices
Specification for a universal wafer grid
Specification for establishing a wafer coordinate system
Test method for determination of crystal defect density in PV silicon ingot and wafer
Collection of metallographs on defects of germanium crystal
General specification for epitaxial wafers and substrates based on gallium nitride
Designations of semiconductor materials
Monocrystalline silicon as cut wafers and lapped wafers
Monocrystalline silicon wafers for solar cells
Monocrystalline silicon polished wafers
Polycrystalline indium phosphide
Monocrystalline silicon for solar cell
Monocrystalline gallium arsenide polished wafers for solar cell
Granular polysilicon produced by fluidized bed method
Epitaxial wafers of germanium based Ⅲ-Ⅴcompounds for solar cell
200mm silicon epitaxial wafer
Collection of metallographs on defects of sapphire crystal
Solar-grade polycrystalline silicon
Specification for alphanumeric marking of silicon wafers
本标准规定了采用高质量分辨率辉光放电质谱法测量太阳能级硅中痕量元素的方法。 本标准适用于太阳能级硅材料中痕量元素的测定,其中铁(Fe)、铬(Cr)、镍(Ni)、铜(Cu)、锌(Zn)、硼(B)、磷(P)、钙(Ca)、钠(Na)、镁(Mg)、铝(Al)、砷(As)、钪(Sc)、钛(Ti)、钒(V)、锰(Mn)、钴(Co)、镓(Ga)等元素的测定范围为5 μg/kg~50 mg/kg。本方法适用于分析多种物理形态的以及添加任何种类和浓度掺杂剂的硅材料,例如多晶硅粉末、颗粒、块、锭、片和单晶硅棒、块、片等。
Test method for measuring trace elements in photovoltaic-grade silicon by high-mass resolution glow discharge mass spectrometry
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