31.080 半导体分立器件 标准查询与下载

SJ 20062-1992 半导体分立器件.3DG210型NPN硅超高频低噪声差分对晶体管.详细规范

Semiconductor discrte device.Detail specification for silicon NPN ultra-high frequency low-noise difference match transistor of type 3DG210

SJ 20059-1992 半导体分立器件.3DG111型NPN硅高频小功率晶体管.详细规范

Semiconductor discrete device.Detail specification for silicon NPN high-frequency low-power transistor of type 3DG111

JEDEC JESD24-9-1992 JESD24的补遗－短电路经受时间测试方法

Short Circuit Withstand Time Test Method Addendum to JEDEC JESD 24

Short Circuit Withstand Time Test Method Addendum to JEDEC JESD 24

SJ/T 10137-1991 TEC1-127系列温差电致冷组件

本标准适用于TEC1-127系列温差电致冷组件。

Detail specification for electronic components--Semiconductor integrated circuits Cμ402 4-bit microprocesor

JEDEC JESD24-2-1991 JESD24的补遗－门负荷测试方法

Gate Charge Test Method Addendum to JEDEC JESD 24

Gate Charge Test Method Addendum to JEDEC JESD 24

CSN 35 8797 Cast.2 IEC 747-2:1990 半导体设备．分立器件和集成电路．第2部分：整流二极管

Zpracovatel: Elektrotechnick? zku?ební ustav — SZ 201, I?O 001 481 - ing. Marie ?ebestová. Oborové normaliza?ní st?edisko: Tesla Ro?nov, koncernov? podnik, I?O 009 750 - ing. Dagmar Balá?ová Národní dohlí?ení inspektorát (NDI): Elektrotechnick? zku?ební ú-stav - SZ 201, I?O 001 482 Pracovník Federálního ú?adu pro normalizaci a mě?ení: Helena Musilová

Semiconductor devices. Discrete devices and integrated circuits. Part 2: Rectifíer diodes

CSN 35 8797 Cast.1 IEC 747-1:1990 分立半导体器件和集成电路．第1部分：总则

Zpracovatel a oborové normaliza?ní st?edisko: TESLA Ro?nov, koncernov? podnik, I?O 009 750 — Ing. Dagmar Balá?ová Národní dohlí?ecí inspektorát NDI: Elektrotechnick? zku?ební ústav, I?O 001 481 - SZ 201 Pracovník Federálního ú?adu pro normalizaci a mě?ení: Helena Musilová

Discrete semiconductor devices and integrated circuits. Part 1: General

JEDEC JESD24-5-1990 JESD24的补遗－信号脉冲UIS雪崩测试方法

Single Pulse Unclamped Inductive Switching (UIS) Avalanche Test Method Addendum to JEDEC JESD 24

Single Pulse Unclamped Inductive Switching (UIS) Avalanche Test Method Addendum to JEDEC JESD 24

JEDEC JEP115-1989 功率MOSFET电子测试方法

Power MOSFET Electrical Dose Rate Test Method

Power MOSFET Electrical Dose Rate Test Method

CSN 35 8797 Cast.10 IEC 747-10:1988 分立半导体器件和集成电路．第10部分：一般规范

Zpracovatel a oborové normaliza?ní st?edisko: TESLA RO?NOV, koncernov? podnik, I?O 009750 — Ing. Dagmar Balá?ová Národní dohlí?ecí inspektorát NDI: Elektrotechnick? zku?ební ústav — SZ 201 Pracovník ??adu pro normalizaci a mě?ení: Helena Musilová

Discrete semiconductor devices and integrated circuits Part 10: Generic specification

JEDEC JEP110-1988 GaAs FETs的热阻测量导则

For power GaAs FET appl icat ions requ'ir ing high re1 iabi 1 i ty an accurate measureme.ntc,of. thermal resistance. is extremely important t o provide the user with knowledge of the FET's operating temperature so that more accurate 1.ife estimates can be made;

Guidelines for the Measurement of Thermal Resistance of GaAs FETs

JEDEC JESD12-5-1988 可测试性指南设计

(From JEDEC Council Ballot JCB-87-46, formulated under the cognizance of JC44 Committee on Semicustom Integrated Circuits.) The concern most often voiced by Application Specific integrated Circuit (ASIC) users is that of testability. Many vendors have taken steps to try to minimize the concerns of their customers but, to date, each company has instituted its own policies and the customers have seen little to ease their confusion. This document is composed of inputs from many IC manufacturers and some IC users. It is intended to bring together a coherent approach to dcsigriing for testability. It is not intended as a specification, nor is it to be interpreted as the only way to design. It should, rather, be used as guidance (as . the title implies) when designs are being initiated.

Design for Testability Guidelines

SJ 2141-1982 硅稳流二极管击穿电压的测试方法

Methods of measurement for breakdown voltage of silicon currenet regulator diodes

JEDEC JESD37-1982 液晶仪器的测试方法和特征指示

Test Methods and Character Designations for Liquid Crystal Devices

Test Methods and Character Designations for Liquid Crystal Devices

JEDEC JEP69-B-1973 场效应管用优先引脚外形

The material contained in this publication was formulated under the cognizance of the JC-24 Committee on Low Power Transistors, This publication supersedes JEDEC Publications 63 and 69.

Preferred Lead Configurations for Field-Effect Transistors

JEDEC JEP79-1969 光敏单元的寿命测试方法

This publication describes standard life test methods to be used in verifying or establishing the maximum ratings given in JEDEC registration format JS-4 RDF-2, "Photoconductive Cell, " dated iO/i6/65.

Life Test Methods for Photoconductive Cells

JEDEC JESD284A-1963 基于收集器的时间内容以及公共发射器输入阻抗抵抗部分的测试方法.前EIA-284-A, EIA-284修订本(前RS-284)

Test Methods for the Collector-Base Time Constant and for the Resistive Part of the Common-Emitter Input Impedance Formerly EIA-284-A, Revision of EIA-284 (formerly RS-284)

Test Methods for the Collector-Base Time Constant and for the Resistive Part of the Common-Emitter Input Impedance Formerly EIA-284-A, Revision of EIA-284 (formerly RS-284)

SJ 20170-1992 半导体分立器件3DK37型功率开关晶体管详细规范

Semiconductor discrete device--Detail specification for Type 3DK37 power switching transistor

SJ 20169-1992 半导体分立器件3DK36型功率开关晶体管详细规范

Semiconductor discrete device--Detail specification for Type 3DK36 power switching transistor

SJ 20172-1992 半导体分立器件3DK38型功率开关晶体管详细规范

Semiconductor discrete device--Detail specification for Type 3DK38 power switching transistor