31.080 半导体分立器件 标准查询与下载

JEDEC JESD35-A-2001 薄电介质的Wafer-Level测试程序

The thin dielectric integrity of MOS devices and circuits is an important reliability concern. Historically, thin oxide reliability has been driven by oxide defects. In general the intrinsic oxide lifetime is much longer than the use requirements, but defects can significantly reduce oxide lifetime. The procedures described herein were developed to estimate the integrity of a thin oxide and as a tool for driving constant improvement in the thin oxide process.

Procedure for the Wafer-Level Testing of Thin Dielectrics

JEDEC JESD51-9-2000 区域排列表面安装包装热测量的测试板

This specification is meant to be broad enough to incorporate a wide variety of surface mount area array package (e.g., BGA) design features and technologies. However, due to a limited number of signal layers that results in shorting some device pins in this specification, the boards described here may not be adequate for measurement of active devices as compared to applications with thermal test chips.

Test Boards for Area Array Surface Mount Package Thermal Measurements

JEDEC JEP120-A-2000 JEDEC出版物中定义的术语和缩略语索引

JEDEC standards and publications contain material that has been prepared, reviewed, and approved through the JEDEC Board of Directors level and subsequently reviewed and approved by the EIA General Counsel.

Index of Terms and Abbreviations Defined in JEDEC Publications

KS C 6249-5-1-2000(2020) 印刷线路板铜箔

Copper foil for printed wiring boards

KS C 6249-5-1-2000 印刷接线板铜箔

이 규격은 프린트 배선판에 사용되는 동일힘 적층판 및 동입힘 플랙시블 재료의 제조에 사

Copper foil for printed wiring boards

JEDEC JESD22-A110-B-1999 A110－B 高加速温度湿度压力测验的测试方法

1 Tolerances apply to the entire useable test area. 2 For information only. 3 The test conditions are to be applied continuously except during any interim readouts. NOTE: For interim readouts, devices should be returnedt o stress withint he time specified in 4.5. 4 For parts that reach absorption equilibrium in 24 hours or less, the HAST test is equivalent to at least 1000 hours at 85 "C185 %RH. For parts that require more than 24 hours to reach equilibrium at the specifiedH AST condition, the time should be extended to allow parttos reach equilibrium. 5 Caution: For plastic-encapsulated microcircuits, it is known that moisture reduces the effective glass transition temperature of the molding compound. Stress temperatures above the effective glass transition temperature may lead to failure mechanisms unrelated to standard 85OC/85% RH stress.

Test Method A110-B Highly-Accelerated Temperature and Humidity Stress Test (HAST)

JEDEC JEP134-1998 顾客提供的半导体仪器失败分析背景信息指南

This Guideline addresses acquiring and transmitting pertinent background information that a failure analyst should have to complete an accurate and timely failure analysis of a semiconductor device. To this end, a suggested background-data form and explanations of its data items are included.

Guidelines for Preparing Customer-Supplied Background Information Relating to a Semiconductor-Device Failure Analysis

CSN 35 8797 Cast.11 IEC 747-11 ZA2:1997 半导体器件．第11部分：分立元件的标准

Semiconductor device. Part 11: Standards for discrete components

CSN 35 8797 Cast.1 IEC 747-1 Z3:1997 半导体器件和集成电路部件．第1部分：一般规定

Semiconductor devices and integrated circuit components. Part 1: General provisions

KS C 6111-1997(2002) 铜/铌钛复合超导电流测量方法DC阈值

TEST METHODS OF D.C. CRITICAL CURRENT OF Cu/Nb-Ti COMPOSITE SUPERCONDUCTORS

SJ 50033/133-1997 半导体分立器件.SY5629～5665A型瞬态电压抑制二极管详细规范

Semiconductor discrete devices.Detail specification for type SY5629～5665A tramsient voltage suppression diodes

SJ 50033/126-1997 半导体分立器件.2DK13型硅肖特基开关整流二极管详细规范

Semiconductor discrete devices.Detail specification for type 2DK13 SCHOTTKY ailicon switching rectifier diode

SJ 50033/134-1997 半导体分立器件.3DD167型低频大功率晶体管详细规范

Semiconductor discrete devices.Detail specification for type 3DD167 low-frequency and high-power transistor

SJ 50033/131-1997 半导体分立器件.3DD157型低频大功率晶体管详细规范

Semiconductor discrete devices.Detail specification for type 3DD157 low-frequency and high-power transistor

SJ 50033/130-1997 半导体分立器件.3DD159型低频大功率晶体管详细规范

Semiconductor discrete devices.Detail specification for type 3DD159 low-frequency and high-power transistor

SJ 50033/132-1997 半导体分立器件.3DD260型低频大功率晶体管详细规范

Semiconductor discrete devices.Detail specification for type 3DD260 low-frequency and high-power transistor

SJ 50033/129-1997 半导体分立器件.3DD155型低频大功率晶体管详细规范

Semiconductor discrete devices.Detail specification for type 3DD155 low-frequency and high-power transistor

CSN 35 8797 Cast.3 IEC 747-3 ZA1+A2:1996 半导体设备．离散设备．第3部分：信号（包括开关）和调节器二极管

Zpracovatel: TESLA SEZAM, a. s. Ro?nov pod Radho?těm, I?O 15503402, Ing.Dagmar Balá?ová Technická normaliza?ní komise: TNK 102 Sou?ástky a materiály pro elektroniku a elektrotechniku Pracovník ?eského normaliza?ního institutu: Ing.Zuzana Nejezchlebová, CSc.

Semiconductor devices. Discrete devices. Part 3: Signál (including switching) and regu lator diodes

CSN 35 8797 Cast.1 IEC 747-1 Z2:1996 半导体设备．分立器件和集成电路．第1部分：总则

Semiconductor devices. Discrete devices and integrated circuits. Pari 1: General.

CSN 35 8797 Cast.8 IEC 747-8 ZA1+A2:1996 半导体设备．离散设备．第8部分：场效应晶体管

Zpracovatel: TESLA SEZAM, a. s., Ro?nov pod Radho?těm, I?O 15503402, Ing.Dagmar Balá?ová Technická normaliza?ní komise: TNK 102 Sou?ástky a materiály pro elektroniku a elektrotechniku Pracovník ?eského normaliza?ního institutu: Ing.Zuzana Nejezchlebová, CSc.

Semiconductor devices. Discrete devices. Part 8: Field-effect transistore