31.080 半导体分立器件 标准查询与下载

CSN 35 8797 Cast.1 IEC 747-1 Z1:1993 半导体器件和集成电路部件．第1部分：一般规定

Semiconductor devices and integrated circuit components. Part 1: General provisions

SJ 50033/17-1994 半导体分立器件.3DK308型功率开关晶体管详细规范

Discrete semiconductor devices Detailed specifications for 3DK308 power switching transistors

SJ 50033/13-1994 半导体分立器件.3DK210型功率开关晶体管详细规范

Discrete semiconductor devices Detailed specifications for 3DK210 power switching transistors

SJ 50033/12-1994 半导体分立器件.3DK209型功率开关晶体管详细规范

Discrete semiconductor devices Detailed specifications for 3DK209 power switching transistors

SJ 50033/11-1994 半导体分立器件.3DK208型功率开关晶体管详细规范

Discrete semiconductor devices Detailed specifications for 3DK208 power switching transistors

SJ 50033/10-1994 半导体分立器件.3DK207型功率开关晶体管详细规范

Discrete semiconductor devices Detailed specifications for 3DK207 power switching transistors

SJ 50033/9-1994 半导体分立器件.3DK206型功率开关晶体管详细规范

Discrete semiconductor devices Detailed specifications for 3DK206 power switching transistors

SJ 50033/8-1994 半导体分立器件.3DK205型功率开关晶体管详细规范

Discrete semiconductor devices Detailed specifications for 3DK12 power switching transistors

SJ 50033/2-1994 半导体分立器件.3CK2904、3CK2904A、3CK2905和3CK2905A型PNP硅小功率开关晶体管详细规范

Semiconductor discret device.Detail specification for type 3CK2904,3CK2904A,3CK2905 and 3CK2905A PNP silicon low-power switching transistor

SJ 50033/16-1994 半导体分立器件.3DK307型功率开关晶体管详细规范

Discrete semiconductor devices Detailed specifications for 3DK307 power switching transistors

SJ 50033/15-1994 半导体分立器件.3DK306型功率开关晶体管详细规范

Discrete semiconductor devices Detailed specifications for 3DK306 power switching transistors

SJ 50033/14-1994 半导体分立器件.3DK305型功率开关晶体管详细规范

Discrete semiconductor devices Detailed specifications for 3DK305 power switching transistors

JB/T 7491-1994 热电偶用二硅化钼保护管

本标准规定了热电偶用二硅化钼保护管的技术要求、试验方法、检验规则、标志、包装和贮存。 本标准适用于热电偶用二硅化钼保护管。

Molybdenum disilicide protective tube for thermocouple

STAS SR CEI 748-2/A1-1994 处置性CU半导体．集成电路．第2部分：数字集成电路

DISPOZITIVE CU SEMICONDUCTOARE Circuite integrate. Partea 2: Circuite integrate digitale

CSN IEC 747-10:1994 半导体设备．第10部分：离散设备及集成电路一般规范

Zpracovatel: SVAS, a. s., Ro?nov pod Radho?těm, I?O 15503496 — Ing. Dagmar Balá?ová Národní dohlí?ecí inspektorát (NDI): Elektrotechnick? zku?ební ústav - SZ 201, I?O 001 481 Pracovník ?eského normaliza?ního institutu: Ing. Jan Vondrá?ek

Semiconductor devices. Part 10: Generic specification for discrete devices and integrated circuits

JEDEC JEP118-1993 GaAs MMIC和FET寿命试验导则

Life tests are run for various purposes. Tests run to detect the level of infant mortality involve short time durations; unless the percentage of devi& having infant mortality is extremely high, the sample size specified in this document is not nearly sufficient. Tests to determine device lifetime for a specific application may be conducted by or for a customer, here the stress and test conditions may be specific to the application. Other life tests are run by a manufacturer and are concerned with determining the lifetime of devices under typical or extreme operation.

Guidelines for GaAs MMIC and FET Life Testing

SJ 20060-1992 半导体分立器件.3DG120型NPN硅高频小功率晶体管.详细规范

Semiconductor discrete device.Detail specification for silicon NPN high-frequency low-power transistor of type 3DG120

SJ 20177-1992 半导体分立器3CK3634～3CK3736型PNP硅小功率开关晶体管详细规范

Semiconductor discrete device-Detail specification for PNP silicon low-power switching transistor for Types 3CK3634～3CK3637

SJ 20063-1992 半导体分立器件.3DG213型NPN硅超高频低噪声双差分对晶体管.详细规范

Semiconductor discrete device.Detail specification for silicon NPN ultra-high frequency low-noise dual-difference match transistor of type 3DG213

SJ 20072-1992 半导体分立器件.GH24、GH25和GH26型半导体光耦合器.详细规范

Detail specification for semiconductor opto-couplers for type GH24,GH25 and GH26